Abstract:
A bank of nano electromechanical integrated circuit filters. The bank of integrated circuit filters comprising a silicon substrate; a sacrificial layer; a device layer including at least two resonators, wherein the at least two resonators include sub-micro excitable elements and wherein the at least two resonators posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least two resonators is determined by the fundamental frequency of the sub-micron elements. At least one switch connects to the bank of integrated circuit filters.
Abstract:
A resonator, an elastic wave transmission element and a method for fabricating the transmission element are provided. The elastic wave transmission element has a first side and a second side. The elastic wave transmission element includes a plurality of structures sequentially arranged along a direction from the first side toward the second side. Each of the structures has a different defect which is different to each other. The impedance of the structures decreases gradually along the direction. As such, the elastic wave transmission element has an impedance match function.
Abstract:
The present disclosure relates to a method of adjusting the resonance frequency of a vibrating element, comprising measuring the resonance frequency of the vibrating element, determining, using abacuses and as a function of the resonance frequency measured, a dimension and a position of at least one area of modified thickness to be formed on the vibrating element so that the resonance frequency thereof corresponds to a setpoint frequency, and forming on the vibrating element, an area of modified thickness of the determined dimension and position.
Abstract:
A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.
Abstract:
Mechanical resonating structures and related methods are described. The mechanical resonating structures may provide improved efficiency over conventional resonating structures. Some of the structures have lengths and widths and are designed to vibrate in a direction approximately parallel to either the length or width. They may have boundaries bounding the length and width dimensions, which may substantially align with nodes or anti-nodes of vibration.
Abstract:
Micromechanical resonating devices, as well as related methods, are described herein. The resonating devices can include a micromechanical resonating structure, an actuation structure that actuates the resonating structure, and a detection structure that detects motion of the resonating structure.
Abstract:
Novel configurations for a miniature vibrating beam mechanical resonator provide low energy transfer to a supporting structure and low sensitivity to mounting misalignment. A symmetric suspended portion includes two vibrating beams that vibrate normal to a quiescent plane of the resonator, 180 degrees out of phase relative to one another. The vibrating beams are attached, at least at one end, to a torsional coupling element that is joined to a mounting pad along a non-translating suspension boundary. Counterbalances are attached to the vibrating beams, and the resonator is configured such that dynamic forces and moments coupled to each torsional coupling element from the vibrating beams are balanced along each nominal non-translating suspension boundary proximate to the symmetry axis and along the symmetry axis proximate to each nominal non-translating suspension boundary. Each non-translating suspension boundary is a torsional axis for a twisting deformation of the first torsional coupling element.
Abstract:
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a contour mode resonator device includes a first conductive layer with a plurality of first layer electrodes including a first electrode at which a first input signal can be provided and a second electrode at which a first output signal can be provided. A second conductive layer includes a plurality of second layer electrodes including a first electrode proximate the first electrode of the first conductive layer and a second electrode proximate the second electrode of the first conductive layer. A second signal can be provided at the first electrode or the second electrode of the second conductive layer to cooperate with the first input signal or the first output signal to define a differential signal. A piezoelectric layer is disposed between the first conductive layer and the second conductive layer. The piezoelectric layer includes a piezoelectric material. The piezoelectric layer is substantially oriented in a plane and capable of movement in the plane responsive to an electric field between the first electrodes or the second electrodes.
Abstract:
A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. The resonator structure is coupled to the CMOS substrate and configured to resonate in response to the one or more control signals.
Abstract:
A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.