公开(公告)号：US09398238B2

公开(公告)日：2016-07-19

申请号：US14616036

申请日：2015-02-06

Applicant: Sony Corporation

Inventor： Shinya Nomura ,  Yoshiaki Urakawa ,  Youji Sakioka

IPC: H04N5/376 ,  H04N5/369 ,  H04N5/345 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/3698 ,  H04N5/3454 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/376 ,  H04N5/378

Abstract: A semiconductor device includes: an element array portion in which unit elements are disposed in a matrix; and a signal processing portion including a signal processing circuit executing predetermined signal processing based on unit signals outputted from the circuit elements, respectively, every column, in which a function of the signal processing circuit is controlled in such a way that power consumption of the signal processing circuit concerned corresponding to the unit elements each not required becomes lower in a phase of an element selection mode in which only information on a part of the unit pixels for one row in the element array portion is required than in a phase of a normal operation mode.

公开(公告)号：US09385149B2

公开(公告)日：2016-07-05

申请号：US14412619

申请日：2013-07-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Pierre Rohr ,  Jean-Luc Martin ,  Bruno Bosset ,  Bertrand Dupont

IPC: G01T1/24 ,  H01L27/146 ,  H04N5/374 ,  H04N5/376 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H04N5/369 ,  H04N5/378

CPC classification number: H01L27/14607 ,  H01L27/14603 ,  H01L27/14663 ,  H01L27/14687 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/0304 ,  H01L31/032 ,  H04N5/3696 ,  H04N5/3742 ,  H04N5/376 ,  H04N5/378

Abstract: An imaging device comprises a sensor of surface area of at least 10 cm2 and comprising: an image zone produced on a single substrate and comprising a group of pixels disposed in rows and columns, the number of pixels per column not being uniform for all the columns of pixels, each pixel collecting electric charges generated by a photosensitive element, row conductors linking the pixels row by row, column conductors linking the pixels column by column, row addressing blocks linked to the row conductors to address each row of pixels individually, and column reading blocks linked to the column conductors to read the electric charges collected by the pixels of the row selected by the row addressing blocks, the column reading blocks being situated at the periphery of the image zone; the row addressing blocks and the column reading blocks being produced on the same substrate as the image zone.

Abstract translation: 成像装置包括具有至少10cm 2的表面积的传感器，包括：在单个基底上产生并包括以行和列布置的一组像素的图像区域，每列的像素数量对于所有列不均匀 的像素，每个像素收集由感光元件产生的电荷，逐行连接像素的行导体，逐列地连接像素的列导体，链接到行导体的行寻址块，以分别对每行像素寻址，以及列 链接到列导体的读取块读取由行寻址块选择的行的像素收集的电荷，列读取块位于图像区域的周边; 行寻址块和列读取块在与图像区域相同的基板上产生。

公开(公告)号：US20160165162A1

公开(公告)日：2016-06-09

申请号：US14925333

申请日：2015-10-28

Applicant: Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

Inventor： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

IPC: H04N5/378 ,  H04N5/225 ,  H04N5/369 ,  H04N5/376

CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US09363453B2

公开(公告)日：2016-06-07

申请号：US14586028

申请日：2014-12-30

Applicant: Sony Corporation

Inventor： Eiji Makino ,  Tetsuji Nakaseko ,  Ryoji Eki ,  Youji Sakioka

IPC: H04N5/359 ,  H04N5/353 ,  H04N5/347 ,  H04N5/374 ,  H04N5/376 ,  H04N5/355 ,  H04N5/335

CPC classification number: H04N5/3591 ,  H04N5/347 ,  H04N5/353 ,  H04N5/35509 ,  H04N5/374 ,  H04N5/376

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

公开(公告)号：US20160156861A1

公开(公告)日：2016-06-02

申请号：US14550205

申请日：2014-11-21

Applicant: CANON KABUSHIKI KAISHA

Inventor： Kazunari Kitani

IPC: H04N5/374 ,  H04N5/3745

CPC classification number: H04N5/374 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H04N5/3742 ,  H04N5/37455 ,  H04N5/376 ,  H04N5/378

Abstract: An image sensor comprises: a first semiconductor including a plurality of pixels two-dimensionally arranged, and a plurality of divided output lines, in a first direction, configured to read out pixel signals from the plurality of pixels in the first direction; and a second semiconductor including a plurality of signal processing units, corresponding to the plurality of output lines, respectively, configured to process the readout pixel signals, and a readout unit configured to read out the signals output from the signal processing units in a second direction, wherein the first semiconductor and the second semiconductor are stacked, and the plurality of output lines and the plurality of signal processing units are connected in correspondence with each other.

Abstract translation: 图像传感器包括：第一半导体，其包括二维排列的多个像素;以及多个分割输出线，在第一方向上，被配置为从所述第一方向上从所述多个像素读出像素信号; 以及第二半导体，包括分别对应于被配置为处理读出像素信号的多个输出线的多个信号处理单元，以及读出单元，被配置为从第二方向读出从信号处理单元输出的信号 其中，第一半导体和第二半导体被堆叠，并且多个输出线和多个信号处理单元彼此对应地连接。

公开(公告)号：US20160150172A1

公开(公告)日：2016-05-26

申请号：US15014704

申请日：2016-02-03

Applicant: Sony Corporation

Inventor： Koichi Okamoto ,  Rei Yoshikawa ,  Hiroaki Ebihara

IPC: H04N5/378 ,  H04N5/369

CPC classification number: H04N5/378 ,  H04N5/3537 ,  H04N5/3698 ,  H04N5/3742 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/376 ,  H04N9/045 ,  H04N9/64

Abstract: The present technology relates to an image sensor and a control method for an image sensor which are capable of measuring illuminance of each color in an image sensor. Each of a plurality of pixel units includes a pixel and a reset transistor, and the pixel includes a photoelectric converting unit that performs photoelectric conversion on light of a certain color incident through a color filter and a transfer transistor that transfers charges obtained by the photoelectric conversion of the photoelectric converting unit and is controllable for each color. According to control of the transfer transistor, the charges are read from the photoelectric converting unit through the transfer transistor and the reset transistor, and a voltage corresponding to the charges is supplied to an AD converting unit connected to the reset transistor. The present technology can be applied to, for example, an image sensor that photographs an image.

公开(公告)号：US09282263B2

公开(公告)日：2016-03-08

申请号：US14094325

申请日：2013-12-02

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hirofumi Totsuka

IPC: H04N5/335 ,  H04N5/365 ,  H04N5/376

CPC classification number: H04N5/3658 ,  H04N5/376

Abstract: An object is to provide a solid-state imaging apparatus capable of causing driving signals of pixels to reach the entire screen and of driving all the pixels. The solid-state imaging apparatus includes a pixel region including a plurality of pixels therein, each pixel having a photoelectric conversion element and at least one transistor, and a plurality of driving lines, each driving each of the plurality of transistors arranged in the pixel region, wherein the driving line supplies a driving signal through a buffer arranged in the pixel region to the transistor, and the number of the buffers is smaller than the number of the pixels.

Abstract translation: 本发明的目的是提供能够使像素的驱动信号到达整个屏幕并驱动所有像素的固态成像装置。 固态成像装置包括其中包括多个像素的像素区域，每个像素具有光电转换元件和至少一个晶体管，以及多个驱动线，其驱动排列在像素区域中的多个晶体管中的每一个 其中，所述驱动线通过布置在所述像素区域中的缓冲器将驱动信号提供给所述晶体管，并且所述缓冲器的数量小于所述像素的数量。

公开(公告)号：US20160037111A1

公开(公告)日：2016-02-04

申请号：US14448154

申请日：2014-07-31

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Tiejun Dai ,  Rui Wang ,  Dyson H. Tai ,  Sohei Manabe

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/376

CPC classification number: H04N5/378 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H04N5/376

Abstract: A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.

Abstract translation: 像素单元包括设置在第一半导体芯片内的光电二极管，用于响应入射在光电二极管上的光累积图像电荷。 传输晶体管设置在第一半导体芯片内并耦合到光电二极管以从光电二极管传输图像电荷。 偏置电压产生电路，设置在第二半导体芯片内，用于产生偏置电压。 偏置电压产生电路耦合到第一半导体芯片以偏置偏压的光电二极管。 偏置电压相对于第二半导体芯片的接地电压为负。 浮置扩散部设置在第二半导体芯片内。 传输晶体管被耦合以将图像电荷从第一半导体芯片上的光电二极管转移到第二半导体芯片上的浮动扩散。

公开(公告)号：US20160028985A1

公开(公告)日：2016-01-28

申请号：US14772311

申请日：2014-03-14

Applicant: RAMBUS INC.

Inventor： Thomas Vogelsang ,  Michael Guidash ,  Song Xue ,  Maxim Smirnov ,  Craig M. Smith ,  Jay Endsley ,  James E. Harris

IPC: H04N5/3745 ,  H04N5/376

CPC classification number: H04N5/3745 ,  H01L27/14634 ,  H01L27/14641 ,  H04N5/347 ,  H04N5/376

Abstract: An image sensor architecture with multi-bit sampling is implemented within an image sensor system. A pixel signal produced in response to light incident upon a photosensitive element is converted to a multiple-bit digital value representative of the pixel signal. If the pixel signal exceeds a sampling threshold, the photosensitive element is reset. During an image capture period, digital values associated with pixel signals that exceed a sampling threshold are accumulated into image data.

Abstract translation: 在图像传感器系统中实现具有多位采样的图像传感器架构。 响应于入射到感光元件上的光而产生的像素信号被转换成表示像素信号的多位数字值。 如果像素信号超过采样阈值，则光敏元件被复位。 在图像捕获期间，与超过采样阈值的像素信号相关联的数字值被累积到图像数据中。

公开(公告)号：US20160006967A1

公开(公告)日：2016-01-07

申请号：US14745574

申请日：2015-06-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takanori Yamashita ,  Yoshikazu Yamazaki

IPC: H04N5/378 ,  H04N5/376 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H04N5/357 ,  H04N5/376

Abstract: Provided is an imaging apparatus, including: a driving circuit switching between a current supplying state and a current non-supplying state of the current sources included in column circuits in the respective columns; at least one second readout line to which image signals output from the column circuits in the respective columns are input; switches each having one terminal and another terminal; and a switch control circuit configured to output switch control signals for respectively controlling the switches to be turned on or off, each of the one terminals being connected to corresponding second readout line and each of the another terminals being connected commonly to an output line, in which, in a period in which the switch control signals for respectively controlling the switches to be turned on are output, the number of the current sources controlled to be in the current supplying state by the driving circuit is constant.

Abstract translation: 提供一种成像装置，包括：驱动电路，在各列中的列电路中包括的电流源的电流供应状态和当前非供电状态之间切换; 输入从各列的列电路输出的图像信号的至少一个第二读出线; 每个开关具有一个端子和另一个端子; 以及开关控制电路，其被配置为输出用于分别控制要接通或关断的开关的开关控制信号，所述一个端子中的每一个连接到相应的第二读出线，并且所述另一个端子中的每一个共同连接到输出线， 在输出用于分别控制开关的开关控制信号的时段中，由驱动电路控制为处于电流供给状态的电流源的数量是恒定的。