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    Composite cover plate, method for preparing the same, and display device containing composite cover plate
    21.
    发明授权
    Composite cover plate, method for preparing the same, and display device containing composite cover plate 有权

    公开(公告)号：US12207455B2

    公开(公告)日：2025-01-21

    申请号：US17950553

    申请日：2022-09-22

    Applicant: Xiamen Tianma Display Technology Co., Ltd.

    Inventor： Jingxiao Feng ,  Zhiqiang Xia ,  Yan Lin ,  Lilian Kuang

    IPC: H05K9/00 ,  B05D1/02 ,  C09D7/61 ,  C09D7/63 ,  C09D171/08 ,  H05K5/00 ,  H05K5/03

    Abstract: Provided is a composite cover plate including a substrate body, wherein the substrate body includes two surfaces that are arranged opposite, at least one surface is provided with an antistatic film layer; the antistatic film layer includes a perfluoropolyether mixture and a silane coupling agent. Further provided is a method for preparing a composite cover plate, including: providing a substrate body with two surfaces that are arranged opposite, and spraying an antistatic film layer on at least one surface of the substrate body; wherein the antistatic film layer includes a perfluoropolyether mixture and a silane coupling agent. Further provided is a display device including a display module and a composite cover plate covering the surface of the display module, wherein the composite cover plate is any composite cover plate provided herein, an antistatic film layer is arranged on a side of the composite cover plate away from the display module.

    SPIN-ON COMPOSITIONS COMPRISING AN INORGANIC OXIDE COMPONENT AND AN ALKYNYLOXY SUBSTITUTED SPIN-ON CARBON COMPONENT USEFUL AS HARD MASKS AND FILLING MATERIALS WITH IMPROVED SHELF LIFE
    25.
    发明申请
    SPIN-ON COMPOSITIONS COMPRISING AN INORGANIC OXIDE COMPONENT AND AN ALKYNYLOXY SUBSTITUTED SPIN-ON CARBON COMPONENT USEFUL AS HARD MASKS AND FILLING MATERIALS WITH IMPROVED SHELF LIFE 有权

    公开(公告)号：US20220025109A1

    公开(公告)日：2022-01-27

    申请号：US17423528

    申请日：2020-02-20

    Applicant: Merck Patent GmbH

    Inventor： M. Dalil RAHMAN ,  Takashi SEKITO

    IPC: C08G61/02 ,  C09D165/00 ,  C08K5/5419 ,  B05D1/00 ,  B05D3/02 ,  C08G61/12 ,  C09D171/08

    Abstract: The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

    Manufacturing semiconductor device with film for forming protective layer
    30.
    发明授权
    Manufacturing semiconductor device with film for forming protective layer 有权
    制造具有形成保护层的膜的半导体器件

    公开(公告)号：US09279064B2

    公开(公告)日：2016-03-08

    申请号：US13855629

    申请日：2013-04-02

    Applicant: NITTO DENKO CORPORATION

    Inventor： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

    IPC: H01L21/00 ,  C09D171/08 ,  H01L23/00 ,  H01L21/78 ,  H01L23/31

    CPC classification number: C09D171/08 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/562 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/31511 ,  H01L2924/00

    Abstract: The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.

    Abstract translation: 本发明的目的在于提供一种形成保护层的膜，其能够防止半导体晶片的低电介质材料层中的裂纹，同时抑制半导体器件的制造中的步骤数量的增加。 该目的通过在其上形成低介电材料层的凸起晶片上形成保护层的膜来实现，该薄膜包括依次层叠的支撑基底，粘合层和热固性树脂层，其中熔体粘度 的热固性树脂层的摩尔比为1×102Pa·S以上且2×104Pa·S以下，粘合剂层的剪切模量为1×10 3 Pa以上2×10 6 Pa以下时， 树脂层的温度为50〜120℃。

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