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公开(公告)号：US20070157871A1
公开(公告)日：2007-07-12
申请号：US10588533
申请日：2004-02-09
Applicant: Hiroshi Inagaki , Masahiro Shibata , Shigeki Kawashima , Nobuyuki Fukuda
Inventor： Hiroshi Inagaki , Masahiro Shibata , Shigeki Kawashima , Nobuyuki Fukuda
CPC classification number: C30B15/14 , C30B15/22 , C30B15/305 , C30B29/06 , C30B30/04 , Y10S117/917 , Y10T117/10 , Y10T117/1016 , Y10T117/1088
Abstract: A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal (14) and the size (diameter D) of the seed crystal (14). When the seed crystal (14) comes into contact with the melt (5), electric power supplied to a bottom heater (19) is fixed, and a magnetic field produced by a magnet (20) is applied to the melt (5). Electric power supplied to a main heater (9) is controlled so that the temperature at the surface of the melt (5) which the seed crystal (14) comes into contact with may be a target value. After the seed crystal (14) comes into contact with the melt (5), single crystal silicon is pulled up without performing a necking process.
Abstract translation: 一种单晶半导体制造方法，用于在晶种与熔体接触的同时，在不改变或几乎不变化供给加热器的电力的情况下实现无位错单晶。 根据添加到晶种（14）中的杂质浓度（C）和晶种（14）的尺寸（直径D）来确定晶种中不产生位错的允许温差DeltaTc。 当籽晶（14）与熔体（5）接触时，提供给底部加热器（19）的电力被固定，并且由磁体（20）产生的磁场被施加到熔体（5）。 控制提供给主加热器（9）的电力使得晶种（14）接触的熔体（5）的表面处的温度可以是目标值。 在籽晶（14）与熔体（5）接触之后，单晶硅被拉起而不进行缩颈处理。
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22.发明申请Apparatus for growing high quality silicon single crystal ingot and growing method using the same 有权用于生长高品质硅单晶锭的装置及使用其的生长方法公开(公告)号：US20070062442A1
公开(公告)日：2007-03-22
申请号：US11352917
申请日：2006-02-13
Applicant: Hyon-Jong Cho
Inventor： Hyon-Jong Cho
CPC classification number: C30B29/06 , C30B15/14 , C30B35/00 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
Abstract: The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
Abstract translation: 本发明涉及一种用于生长由其制造的高质量Si单晶锭和Si单晶锭及其晶片的装置和方法。 生长装置将Si单晶锭的氧浓度控制在各种值，从而以高生产率和极其可控的生长缺陷生产Si单晶锭。
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公开(公告)号：US20060243193A1
公开(公告)日：2006-11-02
申请号：US11457491
申请日：2006-07-14
Applicant: Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
Inventor： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
CPC classification number: H01L29/66757 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78675
Abstract: Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties. The thin film transistor includes a substrate; a plurality of semiconductor layers formed on the substrate, the semiconductor layers including grains of different sizes obtained by crystallizing an amorphous silicon layer beneath a capping layer into a polycrystalline silicon layer using the capping layer pattern containing a metal catalyst with a predetermined distribution and having a predetermined height and width; and a gate insulating layer, a gate electrode, an interlayer insulting layer, and source and drain electrodes formed on the semiconductor layers. Therefore, the crystallization process is performed using the capping layer pattern containing the metal catalyst, which has concentration and distribution varying depending on the thickness of the capping layer pattern, thereby improving the size and uniformity of grains. In addition, the polycrystalline silicon of desired size and uniformity is selectively formed in a desired position by one crystallization process, resulting in the thin film transistor having excellent and desired properties.
Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，其中在基板上形成非晶硅层，在非晶硅层上形成包含不同浓度的金属催化剂的覆盖层 图案化以形成覆盖层图案，并且使非晶硅层结晶化，使得在非晶硅层和覆盖层图案之间的界面处形成的晶种的密度和位置受到控制，从而提高了非晶硅层的尺寸和均匀性 晶粒，并且其中通过一次结晶工艺在期望的位置选择性地形成所需尺寸和均匀性的多晶硅，导致具有优异和期望性能的薄膜晶体管。 薄膜晶体管包括基板; 形成在所述基板上的多个半导体层，所述半导体层包括通过使用包含具有预定分布的金属催化剂的覆盖层图案将覆盖层下面的非晶硅层结晶成多晶硅层而获得的不同尺寸的晶粒，并且具有 预定高度和宽度; 以及形成在半导体层上的栅极绝缘层，栅极电极，层间绝缘层以及源极和漏极。 因此，使用含有金属催化剂的覆盖层图案进行结晶化处理，其具有随封盖层图案的厚度而变化的浓度和分布，从而提高了晶粒的尺寸和均匀性。 此外，所需尺寸和均匀性的多晶硅通过一次结晶工艺选择性地形成在期望的位置，导致薄膜晶体管具有优异和期望的性能。
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24.发明申请Heater for crystal formation, apparatus for forming crystal and method for forming crystal 有权晶体形成用加热器，晶体形成装置及晶体形成方法公开(公告)号：US20050081779A1
公开(公告)日：2005-04-21
申请号：US10503721
申请日：2003-09-08
Applicant: Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
Inventor： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
IPC: C30B15/14 , C30B29/06 , C30B35/00 , C30B15/00 , C30B13/00 , C30B21/04 , C30B21/06 , C30B27/02 , C30B28/08 , C30B28/10 , C30B30/04
CPC classification number: C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
Abstract: The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.
Abstract translation: 本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有 在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。 因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。
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公开(公告)号：US08784561B2
公开(公告)日：2014-07-22
申请号：US13532096
申请日：2012-06-25
Applicant: Rituraj Nandan , Benjamin Michael Meyer , Lee William Ferry
Inventor： Rituraj Nandan , Benjamin Michael Meyer , Lee William Ferry
CPC classification number: F27D1/0033 , C30B11/003 , C30B29/06 , F27B14/10 , Y10T29/49718
Abstract: Methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.
Abstract translation: 公开了用于抑制通过位于定向凝固炉内的坩埚下方的支撑构件的侧壁的热传递的方法。 这些方法包括使用邻近支撑构件的侧壁的绝缘体。 绝缘体阻止通过支撑构件的侧壁的热传递，以确保来自熔体的热量通过支撑构件的一维传递。
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Patent Agency Ranking
26.发明授权Crystal growth system and method for lead-contained compositions using batch auto-feeding 有权使用分批自动喂养的含铅组合物的晶体生长系统和方法公开(公告)号：US08728238B2
公开(公告)日：2014-05-20
申请号：US13957074
申请日：2013-08-01
Applicant: Pengdi Han , Jian Tian
Inventor： Pengdi Han , Jian Tian
CPC classification number: C30B11/006 , C30B11/001 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/02 , C30B11/04 , C30B11/08 , C30B11/14 , C30B29/30 , C30B29/32 , C30B35/00 , H01L41/1875 , Y10T117/10 , Y10T117/1008 , Y10T117/1024 , Y10T117/1076 , Y10T117/108 , Y10T117/1092
Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
Abstract translation: 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。
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27.发明授权Crystal growth system and method for lead-contained compositions using batch auto-feeding 有权使用分批自动喂养的含铅组合物的晶体生长系统和方法公开(公告)号：US08535442B2
公开(公告)日：2013-09-17
申请号：US12373080
申请日：2007-07-12
Applicant: Pengdi Han , Jian Tian
Inventor： Pengdi Han , Jian Tian
CPC classification number: C30B11/006 , C30B11/001 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/02 , C30B11/04 , C30B11/08 , C30B11/14 , C30B29/30 , C30B29/32 , C30B35/00 , H01L41/1875 , Y10T117/10 , Y10T117/1008 , Y10T117/1024 , Y10T117/1076 , Y10T117/108 , Y10T117/1092
Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
Abstract translation: 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。
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28.发明授权公开(公告)号：US08382895B2
公开(公告)日：2013-02-26
申请号：US12307734
申请日：2007-09-27
Applicant: Shinji Togawa , Toshiyuki Sato
Inventor： Shinji Togawa , Toshiyuki Sato
CPC classification number: C30B13/12 , C30B29/06 , Y10T117/1008
Abstract: A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.
Abstract translation: 使用通过FZ法制造硅单晶的方法，其中使用CZ法拉出的P型或N型硅晶体用作原料。 虽然通过气体掺杂法提供导电类型与原料相同的杂质，但是原料通过用于获得产物单晶的感应加热线圈重结晶。
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公开(公告)号：US07790341B2
公开(公告)日：2010-09-07
申请号：US12076120
申请日：2008-03-13
Applicant: JaeSung You
Inventor： JaeSung You
CPC classification number: H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1214 , H01L27/1274
Abstract: Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N×M active regions are defined; positioning a laser mask having first and second blocks over the substrate, wherein the first and second blocks have first and second mask patterns, respectively, and the second mask pattern is a reverse pattern of the first mask pattern; irradiating a first laser beam onto the active regions through the first block; and irradiating a second laser beam onto the active regions through the second block.
Abstract translation: 提供了一种使用激光掩模结晶的方法，用于选择性地结晶活性区而没有激光拍摄标记，包括：提供其中限定N×M个活性区的阵列基板; 将具有第一和第二块的激光掩模定位在衬底上，其中第一和第二块分别具有第一和第二掩模图案，并且第二掩模图案是第一掩模图案的反向图案; 通过第一块将第一激光束照射到有源区上; 以及通过所述第二块将第二激光束照射到所述有源区上。
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公开(公告)号：US07691200B2
公开(公告)日：2010-04-06
申请号：US11909505
申请日：2006-03-24
Applicant: Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
Inventor： Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
CPC classification number: C30B29/16 , C23C14/081 , C30B11/003 , C30B23/066
Abstract: Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.
Abstract translation: 本发明提供一种用于获得氧化镁（MgO）单晶沉积材料的MgO单晶，其在例如电子束沉积方法中在气相沉积期间防止溅射而不降低沉积速率，并且获得MgO单晶衬底 其可以在其上形成，例如具有优异超导性能的超导体薄膜。 钙含量为150×10 -6〜1,000×10 -6 kg / kg，硅含量为10×10 -6 kg / kg以下的MgO单晶，其中，MgO单晶的变化率为30％ 根据TOF-SIMS相对于MgO单晶的抛光表面的分析，检测到的钙碎片离子量的CV值以下。 一种MgO单晶沉积材料和用于形成由MgO单晶获得的薄膜的MgO单晶衬底。
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