公开(公告)号：US09899133B2

公开(公告)日：2018-02-20

申请号：US14450156

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01F27/29 ,  H01F27/28 ,  H01F17/00 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/525 ,  H03H7/09 ,  H03H7/01

CPC classification number: H01F17/0013 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/525

Abstract: Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.

公开(公告)号：US09866197B2

公开(公告)日：2018-01-09

申请号：US14298863

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/46 ,  H03H7/09 ,  H03H7/01 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF communications circuitry, which includes a first RF filter structure, is disclosed. The first RF filter structure includes a first tunable RF filter path and a second tunable RF filter path. The first tunable RF filter path includes a pair of weakly coupled resonators. Additionally, a first filter parameter of the first tunable RF filter path is tuned based on a first filter control signal. A first filter parameter of the second tunable RF filter path is tuned based on a second filter control signal.

公开(公告)号：US09859183B2

公开(公告)日：2018-01-02

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09853685B2

公开(公告)日：2017-12-26

申请号：US14329493

申请日：2014-07-11

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Jayanti Jaganatha Rao

IPC: H03H7/46 ,  H03H7/01 ,  H04B1/525 ,  H04L5/14 ,  H04L5/16

CPC classification number: H04B1/525 ,  H03H7/0153 ,  H03H7/463 ,  H04L5/14 ,  H04L5/1415 ,  H04L5/1469 ,  H04L5/16

Abstract: RF duplexing and methods of operating the same are described herein. In one embodiment, an RF duplexing system may include a control circuit and a duplexer with a first tunable RF filter and second tunable RF filter. The control circuit is operable in a full duplexing transmission mode and a half duplexing transmission mode. The control circuit tunes the first tunable RF filter in the full duplexing transmission mode so that the first tunable RF filter defines a transmission passband and tune the second tunable RF filter so that the second tunable RF filter defines a receive passband. Also, the control circuit tunes one of the tunable RF filters so that the tunable RF filter defines the passband while the other tunable RF filter enhances the passband. In this manner, the tunable RF filters in the duplexer are both utilized to get better performance during the half duplexing mode.

公开(公告)号：US09847565B2

公开(公告)日：2017-12-19

申请号：US14930937

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

IPC: H01P9/00 ,  H01P1/203 ,  H01P5/02 ,  H05K1/00

CPC classification number: H01P1/20381 ,  H01P5/028 ,  H01P9/006 ,  H05K1/00 ,  H05K1/0219 ,  H05K1/0239 ,  H05K1/0298 ,  H05K3/4611 ,  H05K2201/097

Abstract: The present disclosure relates to a tunable slow-wave transmission line. The tunable slow-wave transmission line is formed in a multi-layer substrate and includes an undulating signal path. The undulating signal path includes at least two loop structures, wherein each loop structure includes at least two via structures connected by at least one intra-loop trace. The undulating signal path further includes at least one inter-loop trace connecting the at least two loop structures. The tunable slow-wave transmission line includes a first ground structure disposed along the undulating signal path. Further, the tunable slow-wave transmission line includes one or more circuits that may alter a signal transmitted in the tunable slow-wave transmission line so as to tune a frequency of the signal.

公开(公告)号：US09843342B2

公开(公告)日：2017-12-12

申请号：US14922803

申请日：2015-10-26

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H04B1/00

CPC classification number: H04B1/0057 ,  H04B1/0064

Abstract: A tunable RF transmit/receive (TX/RX) multiplexer, which includes a tunable RF TX/RX diplexing circuit and a first group of RF RX bandpass filters, is disclosed. The tunable RF TX/RX diplexing circuit has a first RX connection node and a first antenna port, which is coupled to a first RF antenna. Each of the first group of RF RX bandpass filters is coupled to the first RX connection node. At least two of the first group of RF RX bandpass filters simultaneously receive and filter respective RF input signals via the first RX connection node to provide respective filtered RF input signals.

公开(公告)号：US09831149B2

公开(公告)日：2017-11-28

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09806192B2

公开(公告)日：2017-10-31

申请号：US15133669

申请日：2016-04-20

Applicant: RF Micro Devices, Inc.

Inventor： Philip W. Mason ,  Michael Carroll ,  Julio C. Costa ,  Jan Edward Vandemeer ,  Daniel Charles Kerr

IPC: H01L29/78 ,  H01L27/092 ,  H01L27/12 ,  H01L23/66

CPC classification number: H01L29/7838 ,  H01L23/66 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78654

Abstract: The present disclosure relates to a silicon-on-insulator (SOI) substrate structure with a buried dielectric layer for radio frequency (RF) complementary metal-oxide semiconductor (CMOS) switch fabrications. The buried dielectric layer suppresses back-gate transistors in the RF CMOS switches fabricated on the SOI substrate structure. The SOI substrate structure includes a silicon handle layer, a silicon oxide layer over the silicon handle layer, a buried dielectric layer over the silicon oxide layer, and a silicon epitaxy layer directly over the buried dielectric layer.

公开(公告)号：US09761678B2

公开(公告)日：2017-09-12

申请号：US13655659

申请日：2012-10-19

Applicant: RF Micro Devices, Inc.

Inventor： Brian G. Moser ,  Michael T. Fresina

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/737 ,  H01L29/08 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207

CPC classification number: H01L29/41708 ,  H01L29/0817 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/42304 ,  H01L29/66318 ,  H01L29/7371

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

公开(公告)号：US09720872B2

公开(公告)日：2017-08-01

申请号：US14511602

申请日：2014-10-10

Applicant: RF Micro Devices, Inc.

Inventor： William David Southcombe ,  Christopher Truong Ngo ,  Joseph Hubert Colles

IPC: G06F13/42

CPC classification number: G06F13/4221 ,  G06F13/4282

Abstract: A device includes a memory, at least two input/output (IO) pins, and slave identifier (ID) selection circuitry. The memory stores a slave ID, which identifies the device to other devices in a serial communication process. The slave ID selection circuitry changes the stored slave ID based on which one of the IO pins is coupled to a supply voltage. By changing the slave ID of the device based on which one of the IO pins is coupled to a supply voltage, a number of devices with otherwise identical slave IDs may change their slave IDs in order to participate in a serial communication process on the same bus. Further, the slave ID of the device may be changed without using an additional IO pin on the device.