公开(公告)号：US10460936B2

公开(公告)日：2019-10-29

申请号：US15784834

申请日：2017-10-16

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/02 ,  H01J11/36 ,  C23C16/54 ,  H01L21/324 ,  C23C16/40 ,  C23C16/48 ,  C23C16/56

Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

公开(公告)号：US20190326123A1

公开(公告)日：2019-10-24

申请号：US16435910

申请日：2019-06-10

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Rui Cheng ,  Anchuan Wang ,  Nitin K. Ingle ,  Abhijit Basu Mallick

IPC: H01L21/3065

Abstract: Exemplary methods for selectively removing silicon (e.g. polysilicon) from a patterned substrate may include flowing a fluorine-containing precursor into a substrate processing chamber to form plasma effluents. The plasma effluents may remove silicon (e.g. polysilicon, amorphous silicon or single crystal silicon) at significantly higher etch rates compared to exposed silicon oxide, silicon nitride or other dielectrics on the substrate. The methods rely on the temperature of the substrate in combination with some conductivity of the surface to catalyze the etch reaction rather than relying on a gas phase source of energy such as a plasma.

公开(公告)号：US10410865B2

公开(公告)日：2019-09-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190252252A1

公开(公告)日：2019-08-15

申请号：US16394731

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/762

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20190252206A1

公开(公告)日：2019-08-15

申请号：US16394724

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/321 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L21/32115 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/32135 ,  H01L21/32136

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.

公开(公告)号：US10354916B2

公开(公告)日：2019-07-16

申请号：US15986189

申请日：2018-05-22

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/285 ,  H01L21/02 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US10347495B2

公开(公告)日：2019-07-09

申请号：US15880671

申请日：2018-01-26

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/02 ,  H01L21/321 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.

公开(公告)号：US10319600B1

公开(公告)日：2019-06-11

申请号：US15918860

申请日：2018-03-12

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Rui Cheng ,  Anchuan Wang ,  Nitin K. Ingle ,  Abhijit Basu Mallick

IPC: H01L21/3065 ,  H01L21/311

Abstract: Exemplary methods for selectively removing silicon (e.g. polysilicon) from a patterned substrate may include flowing a fluorine-containing precursor into a substrate processing chamber to form plasma effluents. The plasma effluents may remove silicon (e.g. polysilicon, amorphous silicon or single crystal silicon) at significantly higher etch rates compared to exposed silicon oxide, silicon nitride or other dielectrics on the substrate. The methods rely on the temperature of the substrate in combination with some conductivity of the surface to catalyze the etch reaction rather than relying on a gas phase source of energy such as a plasma.

公开(公告)号：US10276379B2

公开(公告)日：2019-04-30

申请号：US15925976

申请日：2018-03-20

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Abhijit Basu Mallick ,  Yihong Chen

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/027 ,  C23C16/24 ,  C23C16/50 ,  C23C16/56 ,  H01L21/311 ,  H01L21/67

Abstract: In one implementation, a method of forming an amorphous silicon layer on a substrate in a processing chamber is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate. The method further comprises forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate. The method further comprises performing a plasma treatment to the patterned features. The method further comprises depositing an amorphous silicon layer on the patterned features and the exposed upper surface of the substrate. The method further comprises selectively removing the amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the amorphous silicon layer.

公开(公告)号：US10236197B2

公开(公告)日：2019-03-19

申请号：US14589990

申请日：2015-01-05

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Abhijit Basu Mallick ,  Hari K. Ponnekanti ,  Mandyam Sriram ,  Alexandros T. Demos ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez ,  Dale R. Dubois

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C14/58 ,  C23C14/50 ,  B05C13/00 ,  C23C16/56 ,  H01L21/677

Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.