公开(公告)号：US09343293B2

公开(公告)日：2016-05-17

申请号：US13934863

申请日：2013-07-03

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/452 ,  C23C16/455

CPC classification number: H01L21/02216 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274

Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

Abstract translation: 描述了在图案化衬底上形成电介质层的方法。 所述方法可以包括在化学气相沉积室内的无等离子体衬底处理区域中组合含硅和碳的前体和自由基氧前体。 含硅和碳的前体和自由基氧前体反应以在图案化的衬底上沉积可流动的硅 - 碳 - 氧层。 所得膜相对于热氧化硅和其它标准电介质具有低的湿蚀刻速率比。

公开(公告)号：US08986557B2

公开(公告)日：2015-03-24

申请号：US14177893

申请日：2014-02-11

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin Ingle ,  Roman Gouk ,  Steven Verhaverbeke

IPC: B44C1/22 ,  G11B5/85 ,  G11B5/855

CPC classification number: G11B5/85 ,  G11B5/855

Abstract: Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.

Abstract translation: 提供了用于形成图案化磁性基底的方法和装置。 在基板的磁性活性表面上形成图案化的抗蚀剂。 通过可流动的CVD工艺在图案化的抗蚀剂上形成氧化物层。 蚀刻氧化物层以暴露图案化抗蚀剂的部分。 然后使用蚀刻的氧化物层作为掩模蚀刻图案化的抗蚀剂，以暴露磁性活性表面的部分。 然后通过将能量引导通过经蚀刻的抗蚀剂层和经蚀刻的氧化物层（随后从衬底去除）来改变磁性活性表面的暴露部分的磁性。

公开(公告)号：US10790139B2

公开(公告)日：2020-09-29

申请号：US15112737

申请日：2015-01-05

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/452 ,  C23C16/505 ,  C23C16/56 ,  C23C16/40 ,  C23C16/02 ,  H01J37/32

Abstract: A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a silicon dioxide bulk layer that is formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds prior to or after the deposition of the bulk layer.

公开(公告)号：US09947576B2

公开(公告)日：2018-04-17

申请号：US14797960

申请日：2015-07-13

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick

IPC: H01L21/76 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/76826 ,  H01L21/76837

Abstract: Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even at the bottom of the film due to the significant penetration prior to reaction. The treatment may reduce shrinkage at the bottom of a trench filled with the porous film.

公开(公告)号：US20140302688A1

公开(公告)日：2014-10-09

申请号：US13934863

申请日：2013-07-03

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02216 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274

Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

Abstract translation: 描述了在图案化衬底上形成电介质层的方法。 所述方法可以包括在化学气相沉积室内的无等离子体衬底处理区域中组合含硅和碳的前体和自由基氧前体。 含硅和碳的前体和自由基氧前体反应以在图案化的衬底上沉积可流动的硅 - 碳 - 氧层。 所得膜相对于热氧化硅和其它标准电介质具有低的湿蚀刻速率比。

公开(公告)号：US10460936B2

公开(公告)日：2019-10-29

申请号：US15784834

申请日：2017-10-16

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/02 ,  H01J11/36 ,  C23C16/54 ,  H01L21/324 ,  C23C16/40 ,  C23C16/48 ,  C23C16/56

Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

公开(公告)号：US20170018455A1

公开(公告)日：2017-01-19

申请号：US14797960

申请日：2015-07-13

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/76826 ,  H01L21/76837

Abstract: Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even at the bottom of the film due to the significant penetration prior to reaction. The treatment may reduce shrinkage at the bottom of a trench filled with the porous film which provides the benefit of maintaining a greater filling factor within the trench after processing is completed.

Abstract translation: 描述了用于减少在图案化基底上的多孔膜经历的收缩的方法。 该膜可以是还含有一个或两个碳，氧和氮的含硅和氢的层。 在沉积后不久，含硅和氢的层通过同时暴露于相对小的分子前体（例如NH 3或C 2 H 2）和UV光源来处理。 由于在反应之前的显着渗透，处理可以减少即使在膜的底部由多孔膜经历的收缩。 处理可以减少填充有多孔膜的沟槽的底部的收缩，这提供了在处理完成之后在沟槽内保持更大的填充因子的益处。

公开(公告)号：US20150200094A1

公开(公告)日：2015-07-16

申请号：US14152101

申请日：2014-01-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  C23C14/34

CPC classification number: C23C14/3471 ,  C23C14/0605 ,  C23C14/48 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/31155

Abstract: Methods are described for treating a carbon film on a semiconductor substrate. The carbon may have a high content of sp3 bonding to increase etch resistance and enable new applications as a hard mask. The carbon film may be referred to as diamond-like carbon before and even after treatment. The purpose of the treatment is to reduce the typically high stress of the deposited carbon film without sacrificing etch resistance. The treatment involves ion bombardment using plasma effluents formed from a local capacitive plasma. The local plasma is formed from one or more of inert gases, carbon-and-hydrogen precursors and/or nitrogen-containing precursors.

Abstract translation: 描述了用于处理半导体衬底上的碳膜的方法。 碳可以具有高含量的sp3键合以增加耐蚀刻性，并使新的应用作为硬掩模。 在处理之前和之后，碳膜可以被称为类金刚石碳。 处理的目的是在不牺牲耐蚀刻性的情况下降低沉积碳膜的典型高应力。 该处理涉及使用由局部电容等离子体形成的等离子体流出物进行离子轰击。 局部等离子体由一种或多种惰性气体，碳 - 氢前体和/或含氮前体形成。