公开(公告)号：US20070029918A1

公开(公告)日：2007-02-08

申请号：US11416338

申请日：2006-05-02

Applicant: Kanwal Raina ,  Benham Moradi

Inventor： Kanwal Raina ,  Benham Moradi

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

公开(公告)号：US07098587B2

公开(公告)日：2006-08-29

申请号：US10400732

申请日：2003-03-27

Applicant: James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

Inventor： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC: H01J1/62 ,  H01J63/04 ,  H01J1/02 ,  H01J5/50 ,  G09G3/10

CPC classification number: H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device are disclosed. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract translation: 公开了用于稳定有源矩阵场致发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

公开(公告)号：US07067984B2

公开(公告)日：2006-06-27

申请号：US10137553

申请日：2002-05-02

Applicant: Robert T. Rasmussen

Inventor： Robert T. Rasmussen

IPC: H01J1/62 ,  H01J21/10

CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

公开(公告)号：US20050236964A1

公开(公告)日：2005-10-27

申请号：US11114100

申请日：2005-04-26

Applicant: Yukikhiro Kamide ,  Shinji Kubota ,  Hiroshi Sata ,  Kazuo Kikuchi

Inventor： Yukikhiro Kamide ,  Shinji Kubota ,  Hiroshi Sata ,  Kazuo Kikuchi

IPC: H01J9/42 ,  H01J1/304 ,  H01J9/02 ,  H01J9/50 ,  H01J29/04 ,  H01J29/92 ,  H01J31/12 ,  H01J1/62

CPC classification number: H01J9/50 ,  H01J1/3042 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/0494 ,  Y02W30/828

Abstract: A cathode panel for a cold cathode field emission display, comprising; (a) a plurality of main wirings, (b) a plurality of branch wirings extending from each main wiring, and (c) cold cathode electron emitting portions connected to the branch wirings, wherein a branch wiring connecting a cold cathode electron emitting portion defective in operation and a main wiring is cut off.

Abstract translation: 一种用于冷阴极场发射显示器的阴极面板，包括： （a）多个主布线，（b）从每个主布线延伸的多个分支布线，和（c）连接到分支布线的冷阴极电子发射部分，其中连接冷阴极电子发射部分有缺陷的分支布线 在运行中，主配线被切断。

公开(公告)号：US06940231B2

公开(公告)日：2005-09-06

申请号：US10852319

申请日：2004-05-24

Applicant: Robert T. Rasmussen

Inventor： Robert T. Rasmussen

IPC: G09G3/10 ,  G09G3/22 ,  H01J1/62 ,  H01J21/10 ,  H01J29/48 ,  H01J29/98 ,  H01J31/12 ,  H01J63/04

CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

Abstract translation: 本发明包括场发射器，场致发射显示器（FED），监视器，计算机系统以及采用该系统的方法来从FED装置的阴极提供均匀的电子束。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以诱导来自阴极的场发射的DC偏移电压的电网电压V T和栅极电压，以及叠加在DC偏移电压上的周期性信号，用于在 频率足够快，不能被人眼察觉。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线，其中峰 - 峰电压介于约5伏至约50伏之间。

公开(公告)号：US20040238809A1

公开(公告)日：2004-12-02

申请号：US10483114

申请日：2004-07-26

Inventor： Pavel Adamec ,  Dieter Winkler

IPC: H01L029/06 ,  H01L021/00

CPC classification number: H01J1/3044 ,  H01J2201/319

Abstract: The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7 a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting, the voltage between emitter tip 9 and extracting electrode 5 which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.

Abstract translation: 本发明提供一种包括至少一个场发射阴极3和至少一个提取电极5的电子束装置1，由此场发射阴极5包括连接到由半导体材料制成的发射极尖端9的p型半导体区域7， 在p型半导体区域7上形成p型二极管结13的n型半导体区域11，p型半导体区域7上的第一电接触15和n型半导体区域11上的第二电接触17。 p型半导体区域7防止自由电子束流到发射极，除非电子被pn二极管结13注入到p型半导体区域7中。这样，场发射阴极3可以产生电子束，其中 电子束电流通过pn二极管结的正向偏置第二电压V2来控制。 这种电子束电流具有改善的电流值稳定性。 此外，电子束电流不必通过调节发射极尖端9和提取电极5之间的电压，这将干扰电子束光学器件的电场。 本发明还提供如上所述的场致发射阴极和场发射阴极阵列。 本发明还提供了一种产生至少一个电子束的方法。

公开(公告)号：US06822386B2

公开(公告)日：2004-11-23

申请号：US09260987

申请日：1999-03-01

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J1304

CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels.

Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。

公开(公告)号：US06690077B1

公开(公告)日：2004-02-10

申请号：US09527771

申请日：2000-03-17

Applicant: Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

Inventor： Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

IPC: H01L310232

CPC classification number: H01L21/76849 ,  H01J1/52 ,  H01J29/896 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/319 ,  H01L21/0276 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76885 ,  H01L23/53223 ,  H01L31/02161 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Titanium aluminum nitrogen (“Ti—Al—N”) is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti—Al—N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti—Al—N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti—Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.

Abstract translation: 将钛铝氮（“Ti-Al-N”）沉积到半导体衬底区域上以用作抗反射涂层。 对于布线生产工艺，Ti-Al-N层用作遮盖层，防止在制造过程中光刻光（即光子）的不期望的反射。 对于场致发射显示装置（FED），Ti-Al-N层防止在显示屏阳极处产生的光穿透将阻碍器件工作的晶体管结。 对于布线实施例，在抗反射盖层下方形成铝导电层和钛 - 铝底层。 Ti-Al底层减少了在热处理期间在铝导电层中发生的收缩。

公开(公告)号：US06680489B1

公开(公告)日：2004-01-20

申请号：US09557165

申请日：2000-04-25

Applicant: George R. Brandes ,  Chris S. Christos ,  Xueping Xu

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L310312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US20030205768A1

公开(公告)日：2003-11-06

申请号：US10412275

申请日：2003-04-14

Inventor： Yu-Wu Wang ,  Chun-Tao Lee ,  Cheng-Chung Lee

IPC: H01L021/00 ,  H01L029/76 ,  H01L031/00

CPC classification number: H01J29/96 ,  G09G3/22 ,  G09G2300/0842 ,  H01J9/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: An active matrix current source controlled gray level tunable FED. The inventive FED uses active devices to convert a voltage-controlled signal into an output current and a capacitor to record and hold the voltage-controlled signal, thereby producing a low control voltage and active current source driving FED. As such, adjustment and maintenance of the gray level brightness of the FED is achieved because the brightness fixed by the active devices and the capacitor can obtain a high transient brightness when the FED operates in a lower voltage and brightness, thereby producing a high average brightness and avoiding an arc from high-voltage operation or poor vacuum.

Abstract translation: 有源矩阵电流源控制灰度可调谐FED。 本发明的FED使用有源器件将压控信号转换为输出电流和电容器来记录和保持电压控制信号，从而产生低控制电压和有源电流源驱动FED。 因此，实现了FED的灰度级亮度的调节和维护，因为当FED以较低的电压和亮度操作时，由有源器件和电容器固定的亮度可以获得高瞬态亮度，从而产生高的平均亮度 并避免高压运行或真空不好的电弧。