公开(公告)号：US06266034B1

公开(公告)日：2001-07-24

申请号：US09181232

申请日：1998-10-27

Applicant: David A. Cathey ,  Glen E. Hush ,  Manny K. F. Ma ,  Craig M. Dunham ,  David A. Zimlich

Inventor： David A. Cathey ,  Glen E. Hush ,  Manny K. F. Ma ,  Craig M. Dunham ,  David A. Zimlich

IPC: G09G322

CPC classification number: H01J31/127 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/92

Abstract: A field emission display includes electrostatic discharge protection circuits coupled to an emitter substrate and an extraction grid. In the preferred embodiment, the electrostatic discharge circuit includes diodes reverse biased between grid sections and a first reference potential or between row lines and a second reference potential. The diodes provide a current path to discharge static voltage and thereby prevent a high voltage differential from being maintained between the emitter sets and the extraction grids. The diodes thereby prevent the emitter sets from emitting electrons at a high rate that may damage or destroy the emitter sets. In one embodiment, the diodes are coupled directly between the grid sections and the row lines. In one embodiment, the diodes are formed in an insulative layer carrying the grid sections. In another embodiment, the diodes are integrated into the emitter substrate.

Abstract translation: 场发射显示器包括耦合到发射极衬底和提取栅极的静电放电保护电路。 在优选实施例中，静电放电电路包括在网格部分和第一参考电位之间或在行线和第二参考电位之间反向偏置的二极管。 二极管提供电流路径来放电静电压，从而防止在发射极组和提取栅之间保持高电压差。 因此，二极管可防止发射极组以可能损坏或破坏发射极组的高速率发射电子。 在一个实施例中，二极管直接连接在网格部分和行线之间。 在一个实施例中，二极管形成在承载网格部分的绝缘层中。 在另一个实施例中，二极管被集成到发射器衬底中。

公开(公告)号：US06246069B1

公开(公告)日：2001-06-12

申请号：US09062735

申请日：1998-04-20

Applicant: David S. Hsu ,  Henry F. Gray

Inventor： David S. Hsu ,  Henry F. Gray

IPC: H01L2906

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Abstract translation: 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底，突起限定至少一个侧壁，侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上，发射极层选自半导体和导体，并且是包括延伸超出第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上，该对支撑层各自选自由半导体和导体组成的组，并且每个具有比发射极层更高的功函数。

公开(公告)号：US06165034A

公开(公告)日：2000-12-26

申请号：US312491

申请日：1999-05-17

Applicant: Aoji Isono ,  Yoshiyuki Osada ,  Hidetoshi Suzuki ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Noritake Suzuki ,  Yasuyuki Todokoro

Inventor： Aoji Isono ,  Yoshiyuki Osada ,  Hidetoshi Suzuki ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Noritake Suzuki ,  Yasuyuki Todokoro

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J31/12

CPC classification number: B82Y10/00 ,  G09G3/22 ,  G09G2300/0885 ,  G09G2310/06 ,  H01J1/316 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2201/319

Abstract: This invention relates to an electron source and an image forming apparatus each of which particularly comprises a surface conduction type electron emitting element as an electron emitting element, a method of manufacturing an electron source and an image forming apparatus, in which the energization forming treatment step of the surface conduction type electron emitting element is performed by applying a voltage to an electron emitting portion formation thin film via a nonlinear element connected in series with the thin film and having nonlinear voltage/current characteristics, an electron source and an image forming apparatus in each of which the nonlinear element is connected in series with the surface conduction type electron emitting element, and a method of driving the same.

Abstract translation: 本发明涉及一种电子源和图像形成装置，其特别包括作为电子发射元件的表面传导型电子发射元件，制造电子源的方法和图像形成装置，其中激励形成处理步骤 的表面传导型电子发射元件是通过经由与薄膜串联连接并具有非线性电压/电流特性的非线性元件向电子发射部分形成薄膜施加电压，电子源和图像形成装置 其中每个非线性元件与表面传导型电子发射元件串联连接，以及驱动该方法。

公开(公告)号：US6153978A

公开(公告)日：2000-11-28

申请号：US431336

申请日：1999-10-28

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J29/04 ,  G09G3/20 ,  G09G3/22 ,  H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  G09G3/10

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: In a field emission cold cathode device including one emitter, a supporting region formed of a conductor or a semiconductor for supporting the emitter, and a gate electrode provided in the proximity of the emitter, electrons are supplied to the emitter from a capacitance formed by a pair of electrodes separated from each other, one of the pair of electrodes being DC connected to the emitter. The emitted electron amount can be controlled by controlling a voltage applied to the other of the pair of electrodes. Thus, it is possible to minimize the variation in the emission current caused by variation in the emitter devices, which was unavoidable in the prior art.

Abstract translation: 在包括一个发射极的场致发射冷阴极器件中，由导体或用于支撑发射极的半导体形成的支撑区域和设置在发射极附近的栅电极，电子从由 一对电极彼此分离，该对电极中的一个电极与发射极连接。 可以通过控制施加到一对电极中的另一个的电压来控制发射的电子量。 因此，可以使发射器件的变化引起的发射电流的变化最小化，这在现有技术中是不可避免的。

公开(公告)号：US6137232A

公开(公告)日：2000-10-24

申请号：US55436

申请日：1998-04-06

Applicant: Chun-hui Tsai

Inventor： Chun-hui Tsai

IPC: H01J3/02 ,  G09G3/10

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A design for a field emission device comprising a cold cathode emitter, a control gate and a focus gate, is discussed. The focus gate is connected to the emitter voltage source and a ballast resistor is inserted between this connection point and the emitter. This ensures that the focus gate will always be more negative than the emitter, this difference in potential increasing with increasing emitter current. This leads to a linear current-voltage characteristic for the device and also makes for a tighter electron beam than that provided by designs of the prior art, A physical realization of the design is described along with a cost effective method for manufacturing said physical realization.

Abstract translation: 讨论了包括冷阴极发射器，控制栅极和聚焦栅极的场致发射器件的设计。 聚焦门连接到发射极电压源，镇流电阻插入在该连接点和发射极之间。 这确保了聚焦栅极总是比发射极更负，这种差异随着发射极电流的增加而增加。 这导致器件的线性电流 - 电压特性，并且还使得比现有技术的设计提供的电子束更紧的电子束。设计的物理实现与用于制造所述物理实现的成本有效的方法一起被描述。

公开(公告)号：US6118417A

公开(公告)日：2000-09-12

申请号：US551780

申请日：1995-11-07

Applicant: Glen E. Hush

Inventor： Glen E. Hush

IPC: G09G3/20 ,  G09G3/22 ,  H01J31/12 ,  G09G3/06

CPC classification number: G09G3/22 ,  H01J31/127 ,  G09G2310/0275 ,  G09G2310/0278 ,  G09G2320/0276 ,  G09G3/2011 ,  H01J2201/304 ,  H01J2201/319 ,  H01J2329/00

Abstract: The present invention enables a reduction in the number of electrical conductors which must be connected to each pixel in a field emission display. A first feature of the invention is that the functions of a conventional power supply ground conductor and a conventional "row enable" logic signal conductor are combined in a single "inverted row enable" logic signal conductor for each display row. A second feature is that the functions of a conventional "column enable" logic signal conductor and a conventional luminance signal conductor are combined in a "column luminance" signal conductor for each display column. The first feature is implemented by connecting the "inverted row enable" logic signal conductor as the source of emitter tip current for all the pixels in a display row. The second feature is implemented by gating (logically ANDing) a luminance signal by a "column enable" logic function to create a column luminance signal for each display column. The current flow through the emitter tips of each pixel, and hence the luminance of each pixel, is controlled by a transistor connected in series between the emitter tips of that pixel and the "row enable" signal conductor for the display row containing that pixel. The gate of the transistor connects to a conductor carrying the "column luminance" signal for the display column containing that pixel.

Abstract translation: 本发明能够减少在场发射显示器中必须连接到每个像素的电导体的数量。 本发明的第一个特征是传统的电源接地导体和常规的“行使能”逻辑信号导体的功能被组合在每个显示行的单个“反相行使能”逻辑信号导体中。 第二个特征是常规的“列使能”逻辑信号导体和常规亮度信号导体的功能被组合在每个显示列的“列亮度”信号导体中。 第一个特征是通过连接“反相行使能”逻辑信号导体作为显示行中所有像素的发射极尖端电流源。 第二个特征是通过“列使能”逻辑功能门控（逻辑地）对亮度信号进行逻辑（AND）运算来实现，以为每个显示列创建列亮度信号。 通过每个像素的发射极尖端的电流以及因此每个像素的亮度的电流由串联在该像素的发射极尖端和包含该像素的显示行的“行使能”信号导体之间的晶体管控制。 晶体管的栅极连接到承载包含该像素的显示列的“列亮度”信号的导体。

公开(公告)号：US6104131A

公开(公告)日：2000-08-15

申请号：US951780

申请日：1997-10-16

Applicant: Jean-Frederic Clerc

Inventor： Jean-Frederic Clerc

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode (1) includes a substrate (10), a resistive layer (11) disposed on the substrate (10); at least one cathode conductor (13), and microtips (2) disposed on the resistive layer (11), wherein the cathode conductor (13) has circular wells (17) in the middle of each of which a microtip (2) is disposed, whereby the microtips (2) are electrically isolated from the cathode (13) by a constant access resistance.

Abstract translation: 阴极（1）包括衬底（10），设置在衬底（10）上的电阻层（11）。 至少一个阴极导体（13）和设置在所述电阻层（11）上的微尖端（2），其中所述阴极导体（13）在每个所述阴极导体（13）的中间设置有微尖（2） ，由此微尖端（2）通过恒定的访问阻力与阴极（13）电隔离。

公开(公告)号：US6097139A

公开(公告)日：2000-08-01

申请号：US011345

申请日：1998-02-04

Applicant: Richard Allan Tuck ,  Rodney Vaughan Latham ,  William Taylor

Inventor： Richard Allan Tuck ,  Rodney Vaughan Latham ,  William Taylor

IPC: H01J9/02 ,  H01J1/304 ,  H01J7/18 ,  H01J29/87 ,  H01J29/94 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J1/304 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field electron emission material comprises an electrically conductive substrate and, disposed thereon, electrically conductive particles embedded in, formed in, or coated by a layer of inorganic electrically insulating material. A first thickness material is defined between the particle and the environment in which the material is disposed. The dimension of each particle between the first and second thicknesses is significantly greater than each thickness. Upon application of a sufficient electric field, each thickness provides a conducting channel, to afford electron emission from the particles By use of an inorganic insulating material, surprisingly good stability and performance have been obtained. The particles can be relatively small, such that the electron emitting material can be applied to the substrate quite cheaply by a variety of methods, including printing. The material can be used in a variety of devices, including display and illuminating devices.

Abstract translation: PCT No.PCT / GB96 / 01858 Sec。 371日期：1998年2月4日 102（e）1998年2月4日PCT PCT 1996年8月2日PCT公布。 出版物WO97 / 06549 日期1997年2月20日一种场致电子发射材料包括导电基底，并且在其上设置嵌入在由无机电绝缘材料层形成或涂覆无机电绝缘材料的导电颗粒上。 第一厚度材料被限定在颗粒和其中设置材料的环境之间。 第一和第二厚度之间的每个颗粒的尺寸明显大于每个厚度。 在施加足够的电场时，每个厚度提供导电通道，以提供来自颗粒的电子发射通过使用无机绝缘材料，已经获得令人惊讶的良好的稳定性和性能。 颗粒可以相对较小，使得电子发射材料可以通过各种方法（包括印刷）相当便宜地施加到基材上。 该材料可用于各种设备，包括显示和照明设备。

公开(公告)号：US6000980A

公开(公告)日：1999-12-14

申请号：US807113

申请日：1996-12-13

Applicant: Livio Baldi ,  Alessandro Tonti

Inventor： Livio Baldi ,  Alessandro Tonti

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/319

Abstract: A process for forming a microtip cathode structure on a field emission display panel which avoids the need of vacuum depositing a lift-off layer for the microtip deposition overstructure in specially equipped reactors to accomplish a deposition at a grazing angle, by co-patterening the lift-off layer together with an underlying metal grid layer using a succession of different etching steps through the openings of a grid definition mask. According to an embodiment, nickel is used as lift-off material and is either wet-etched or sputter-etched before performing a plasma etch of the underlying grid metal layer. According to an alternative embodiment, the masking resist layer is used as lift-off material.

Abstract translation: 一种用于在场发射显示面板上形成微尖端阴极结构的方法，其避免真空沉积用于特别装备的反应器中的微尖端沉积过度结构的剥离层，以通过共同观察电梯来实现放电角度的沉积 使用一系列不同的蚀刻步骤通过网格定义掩模的开口与底层金属网格层一起使用。 根据一个实施例，镍用作剥离材料，并且在对下面的栅格金属层进行等离子体蚀刻之前被湿式蚀刻或溅射蚀刻。 根据替代实施例，掩模抗蚀剂层用作剥离材料。

公开(公告)号：US5952771A

公开(公告)日：1999-09-14

申请号：US779590

申请日：1997-01-07

Applicant: Tianhong Zhang

Inventor： Tianhong Zhang

IPC: G09G3/22 ,  H01J9/02 ,  H01J1/02

CPC classification number: H01J9/025 ,  G09G3/22 ,  G09G2300/08 ,  H01J2201/319

Abstract: A micropoint assembly is disclosed that includes a micropoint and a switch coupled to the micropoint. The switch is operable to activate and deactivate the micropoint and includes a nitride oxidation layer. The switch may be a MOSFET with a gate oxide that contains the nitride oxidation layer. In such configuration, the nitride oxidation layer contains the greatest concentration of SiN within the gate oxide. A method for constructing the micropoint assembly and field emission displays incorporating the micropoint assembly is also disclosed. Such method includes simultaneous annealing of the nitride oxidation layer during conventional FED fabrication steps.

Abstract translation: 公开了一种微点组件，其包括微点和耦合到微点的开关。 开关可操作以激活和去激活微点并且包括氮化物氧化层。 开关可以是具有包含氮化物氧化层的栅极氧化物的MOSFET。 在这种结构中，氮化物氧化层在栅极氧化物内含有最大浓度的SiN。 还公开了一种用于构造结合有微点组件的微点组件和场致发射显示器的方法。 这种方法包括在传统的FED制造步骤期间氮化物氧化层的同时退火。