公开(公告)号：US07050290B2

公开(公告)日：2006-05-23

申请号：US10768916

申请日：2004-01-30

Applicant: Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai ,  Chun-Hon Chen ,  Chung-Long Chang

Inventor： Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai ,  Chun-Hon Chen ,  Chung-Long Chang

IPC: H01G4/008 ,  H01G4/20

CPC classification number: H01L28/60 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A new capacitor device having two terminals is achieved. The device comprises a plurality of first conductive lines overlying a substrate. Each of the first conductive lines is connected to one of the capacitor device terminals. The adjacent first conductive lines are connected to opposite terminals. The first conductive lines comprise a plurality of conductive materials. A plurality of second conductive lines overlie the plurality of first conductive lines. Each of the second conductive lines is connected to one of the capacitive device terminals. Adjacent second conductive lines are connected to opposite terminals. Any second conductive line overlying any first conductive line is connected to an opposite terminal. The second conductive lines comprises a plurality of conductive materials. A first dielectric layer overlies the substrate and lies between the adjacent first conductive lines. A second dielectric layer lies between the first conductive lines and the second conductive lines.

Abstract translation: 实现了具有两个端子的新的电容器装置。 该器件包括覆盖衬底的多个第一导电线。 每个第一导线连接到电容器装置端子之一。 相邻的第一导线连接到相对的端子。 第一导线包括多个导电材料。 多个第二导线覆盖多个第一导线。 每个第二导线连接到电容器件端子中的一个。 相邻的第二导线连接到相对的端子。 覆盖任何第一导线的任何第二导线连接到相对的端子。 第二导线包括多个导电材料。 第一电介质层覆盖在基板之间并且位于相邻的第一导电线之间。 第二介电层位于第一导线和第二导线之间。

公开(公告)号：US07041243B2

公开(公告)日：2006-05-09

申请号：US10722403

申请日：2003-11-28

Applicant: Allen Fong-Chin Lin

Inventor： Allen Fong-Chin Lin

IPC: B29C47/06

CPC classification number: B32B27/20 ,  B29C47/0004 ,  B29C47/0021 ,  B29C47/065 ,  B29C47/145 ,  B29C47/56 ,  B29C55/023 ,  B29K2023/06 ,  B29K2023/12 ,  B29K2105/0008 ,  B29K2105/0044 ,  B29K2105/005 ,  B29K2105/04 ,  B29K2105/16 ,  B29K2105/256 ,  B29K2995/0022 ,  B29K2995/0073 ,  B29K2995/0082 ,  B32B27/065 ,  B32B27/08 ,  B32B27/10 ,  B32B27/32 ,  B32B29/005 ,  B32B29/007 ,  B32B2250/05 ,  Y10T428/249986 ,  Y10T428/249988 ,  Y10T428/249991 ,  Y10T428/249992

Abstract: The invention discloses a 5-layer co-extruded biaxial-oriented polypropylene synthetic paper which is a 5-layer laminated structure with thickness between 30–300 μm comprising the uppermost layer (A) of paper sheet or resin, the second layer (B) of paper sheet or resin, the intermediate foamed layer (C), the forth layer (D) of paper sheet or resin and the bottom layer (E) of paper sheet or resin which is to improve the rigidity and stiffness covering power, strength between layers, glossiness of paper surface, paper thickness and the printability of the conventional synthetic paper.

Abstract translation: 本发明公开了一种5层共挤双轴取向聚丙烯合成纸，其为厚度在30〜300μm之间的5层层叠结构体，其包含纸或树脂的最上层（A），第二层（B） 的纸张或树脂，中间发泡层（C），纸张或树脂的第四层（D）和纸张或树脂的底层（E），以提高刚性和刚度覆盖力，强度 层，纸表面的光泽度，纸张厚度和常规合成纸的可印刷性。

公开(公告)号：US07034957B2

公开(公告)日：2006-04-25

申请号：US10121545

申请日：2002-04-15

Applicant: Shang-Yu Yang ,  Chen-Hsiang Shih ,  Chin-Lin Chang

Inventor： Shang-Yu Yang ,  Chen-Hsiang Shih ,  Chin-Lin Chang

IPC: B41B15/00

CPC classification number: H04N1/00018 ,  H04N1/00002 ,  H04N1/00045 ,  H04N1/00055

Abstract: A method for increasing signal to noise ratio is disclosed. The method can automatically detect saturation output voltage of the photosensors via adjusting exposure time or illumination intensity so as to obtain optimum output voltage of the photosensors as well as high signal to noise ratio that can generate high quality images.

公开(公告)号：US20060041716A1

公开(公告)日：2006-02-23

申请号：US11207975

申请日：2005-08-19

Applicant: Shun-Chin Lin ,  Wei-Tse HSU ,  Hung-Ping Liu ,  Tsang-Jung Hu

Inventor： Shun-Chin Lin ,  Wei-Tse HSU ,  Hung-Ping Liu ,  Tsang-Jung Hu

IPC: G06F13/28

CPC classification number: G11B20/1217 ,  G11B20/1883 ,  G11B2020/1062 ,  G11B2220/20

Abstract: A method of write frequency management for writing recorded data to an optical rewritable storage medium. The optical rewritable storage medium comprises a data area and a count area. The data area comprises multiple data units, the count area comprises multiple values, and each value represents a write frequency corresponding to one of the data units. The method receives a data write instruction comprising a write address range and the recorded data, writes the recorded data to the data units corresponding to the write address range, and updates the values corresponding to the write address range.

Abstract translation: 一种用于将记录数据写入光可重写存储介质的写入频率管理方法。 光学可重写存储介质包括数据区和计数区。 数据区域包括多个数据单元，计数区域包括多个值，并且每个值表示对应于一个数据单元的写入频率。 该方法接收包括写入地址范围和记录数据的数据写入指令，将记录的数据写入对应于写入地址范围的数据单元，并更新与写入地址范围对应的值。

公开(公告)号：US20060038210A1

公开(公告)日：2006-02-23

申请号：US10685824

申请日：2004-08-23

Applicant: Wen Chin Lin ,  Denny Tang ,  Chien-Chung Hung

Inventor： Wen Chin Lin ,  Denny Tang ,  Chien-Chung Hung

IPC: H01L29/94

CPC classification number: G11C11/15 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228

Abstract: The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.

Abstract translation: 本公开提供了一种改进的磁存储单元。 磁存储单元包括开关元件和两个磁性隧道结（MTJ）器件。 导体以并联结构连接第一和第二MTJ装置，并且将并联配置串联连接到开关元件的电极。 第一台MTJ装置的电阻不同于第二台的电阻。

公开(公告)号：US20050289422A1

公开(公告)日：2005-12-29

申请号：US11035784

申请日：2005-01-13

Applicant: Shih-Chin Lin ,  Hsiao-Yi Lin

Inventor： Shih-Chin Lin ,  Hsiao-Yi Lin

IPC: G01R31/28 ,  G11C19/38

CPC classification number: G09G3/3688 ,  G09G2310/027 ,  G09G2310/0286 ,  G11C19/00 ,  G11C19/28 ,  G11C19/287

Abstract: A shift register and a shift register are provided. The shift register comprises the switch circuit, the latch circuit, and the inverter circuit 170. The shift register set, by alternately-serially connecting two types of shift registers, can receive two clock signals and an initial pulse signal to control the output waveform. The output of the present stage shift register can be used to control the turn-on time of the nest stage shift register. Further, by changing the circuit driving signal from the dynamic signal to the static signal, the circuit can operate only when the signal is “0” or “1” without being affected by the signal rising time and the falling time so that the circuit can operate in a more stable status.

Abstract translation: 提供了移位寄存器和移位寄存器。 移位寄存器包括开关电路，锁存电路和逆变器电路170.通过交替串联连接两种类型的移位寄存器的移位寄存器可以接收两个时钟信号和初始脉冲信号来控制输出波形。 当前级移位寄存器的输出可用于控制嵌套级移位寄存器的导通时间。 此外，通过将电路驱动信号从动态信号改变为静态信号，电路仅在信号为“0”或“1”时才能工作，而不受信号上升时间和下降时间的影响，使得电路可以 经营状况更加稳定。

公开(公告)号：US20050275184A1

公开(公告)日：2005-12-15

申请号：US10854833

申请日：2004-05-27

Applicant: Anthony Lamela ,  Troy Bateman ,  Brian Felsing ,  Peter Dix ,  Daniel Shore ,  Hong-Chin Lin

Inventor： Anthony Lamela ,  Troy Bateman ,  Brian Felsing ,  Peter Dix ,  Daniel Shore ,  Hong-Chin Lin

IPC: B60G9/04

CPC classification number: B60G17/0152 ,  B60G2202/154 ,  B60G2300/022 ,  B60G2400/204 ,  B60G2400/252 ,  B60G2400/60 ,  B60G2500/10

Abstract: A skid steer vehicle has a chassis with four drive wheels suspended from the chassis that are damped by four damping cylinders. An electronic controller varies the damping of the cylinders in an automatic mode, based on certain operational parameters of the vehicle, and in a manual mode in response to operator selection of a desired degree of suspension damping.

Abstract translation: 滑行转向车辆具有底盘，四个驱动轮悬挂在底盘上，四个阻尼缸被阻尼。 电子控制器基于车辆的某些操作参数在自动模式下改变气缸的阻尼，并且响应于操作者选择期望的悬架阻尼程度来改变手动模式。

公开(公告)号：US06958597B1

公开(公告)日：2005-10-25

申请号：US10709470

申请日：2004-05-07

Applicant: Hong-chin Lin ,  Po-Hsuan Huang ,  Chien-Hung Ho

Inventor： Hong-chin Lin ,  Po-Hsuan Huang ,  Chien-Hung Ho

IPC: G05F1/40 ,  G05F3/16 ,  G05F3/26 ,  G05F3/30

CPC classification number: G05F3/262 ,  G05F3/30 ,  Y10S323/907

Abstract: Voltage generating apparatus includes a positive temperature coefficient current generating module, a negative temperature coefficient current generating module, a fine-tune current module and a voltage output module. The function of the positive temperature coefficient current generating module and the negative temperature coefficient current generating module, which take advantage of characteristics of MOS devices operated in the sub-threshold region, is to generate a stable current of positive temperature coefficient and a stable current of negative temperature coefficient, respectively. The current fine-tune module increases or decreases output current of the negative temperature coefficient current generating module. The voltage output module sums two output currents of the positive temperature coefficient current generating module and the negative temperature coefficient current generating module and transforms the total current into output voltage that is stable under temperature and process variation.

Abstract translation: 电压产生装置包括正温度系数电流产生模块，负温度系数电流产生模块，微调电流模块和电压输出模块。 利用在亚阈值区域工作的MOS器件的特性的正温度系数电流发生模块和负温度系数电流发生模块的功能是产生正温度系数和稳定电流的稳定电流 负温度系数。 当前微调模块增加或减少负温度系数电流发生模块的输出电流。 电压输出模块将正温度系数电流发生模块和负温度系数电流发生模块的两个输出电流相加，并将总电流转换为在温度和工艺变化下稳定的输出电压。

公开(公告)号：US20050227493A1

公开(公告)日：2005-10-13

申请号：US10818009

申请日：2004-04-05

Applicant: Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

Inventor： Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

IPC: G01J1/42 ,  H01L27/06 ,  H01L27/08

CPC classification number: H01L21/263 ,  H01L27/0688 ,  H01L27/08

Abstract: A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor device and the bombarded area.

Abstract translation: 一种微电子器件，包括至少部分地位于衬底上的半导体器件，至少部分地位于衬底上并且邻近半导体器件的轰击区域，以及插入半导体器件和被轰击区域的轰击衰减器。

公开(公告)号：US20050191804A1

公开(公告)日：2005-09-01

申请号：US10791607

申请日：2004-03-01

Applicant: Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

Inventor： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

IPC: H01L21/00 ,  H01L21/06 ,  H01L21/8234 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1691

Abstract: A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.

Abstract translation: 一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。 这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。