Flexible vapor chamber with shape memory material

    公开(公告)号:US12146476B2

    公开(公告)日:2024-11-19

    申请号:US17561605

    申请日:2021-12-23

    Abstract: Particular embodiments described herein provide for a flexible vapor chamber with shape memory material for an electronic device. In an example, the electronic device can include a flexible vapor chamber and shape memory material coupled to the shape memory material. When the shape memory material is activated, the shape memory material moves a portion of the flexible vapor chamber to a position that helps with heat dissipation of heat collected by the flexible vapor chamber.

    STRUCTURE AND METHOD FOR IN-SITU MONITORING OF THERMAL INTERFACE MATERIALS

    公开(公告)号:US20240379495A1

    公开(公告)日:2024-11-14

    申请号:US18314157

    申请日:2023-05-09

    Abstract: The present disclosure is directed to monitoring the integrity of the thermal interface material (TIM) of a semiconductor device directly by a monitoring component of a motherboard, a system on chip (SOC), or a remote device to measure either the electrical resistivity or capacitive property of the TIM, depending on the type of TIM being used, as a means to directly assess the thermal properties (conductivity, resistance, and/or impedance) of the TIM as it ages. In an aspect, the electrical resistivity or capacitive property of the TIM may be initially measured and charted, and thereafter, the changes in the electrical resistivity or capacitive property may be sensed by the monitoring component and, based on the delta of those changes, there may be remedial actions taken to mitigate impacts to the overall system performance and/or to prevent irreparable damage to the semiconductor device/system.

    Thermal management solutions for embedded integrated circuit devices

    公开(公告)号:US12142543B2

    公开(公告)日:2024-11-12

    申请号:US18092140

    申请日:2022-12-30

    Abstract: An integrated circuit structure may be formed having a substrate, at least one integrated circuit device embedded in and electrically attached to the substrate, and a heat dissipation device in thermal contact with the integrated circuit device, wherein a first portion of the heat dissipation device extends into the substrate and wherein a second portion of the heat dissipation device extends over the substrate. In one embodiment, the heat dissipation device may comprise the first portion of the heat dissipation device formed from metallization within the substrate.

    ADAPTIVE DEEP LEARNING MODEL FOR NOISY IMAGE SUPER-RESOLUTION

    公开(公告)号:US20240370972A1

    公开(公告)日:2024-11-07

    申请号:US18637594

    申请日:2024-04-17

    Inventor: Wenyi TANG Xu ZHANG

    Abstract: Embodiments described herein are generally directed to an end-to-end trainable degradation restoration network (DRN) that enhances the ability of a super-resolution (SR) subnetwork to deal with noisy low-resolution images. An embodiment of a method includes estimating, by a noise estimator (NE) subnetwork of the DRN, an estimated noise map for a noisy input image; and predicting, by the SR subnetwork of the DRN, a clean upscaled image based on the input image and the noise map by, for each of multiple conditional residual dense blocks (CRDBs) stacked within one or more cascade blocks representing the SR subnetwork, adjusting, by a noise control layer of the CRDB that follows a stacked set of a multiple residual dense blocks of the CRDB, feature values of an intermediate feature map associated with the input image by applying (i) a scaling factor and (ii) an offset factor derived from the noise map.

    OPTICAL ARCHITECTURE WITH HYBRID ON-SILICON III-V MODULATOR

    公开(公告)号:US20240369898A1

    公开(公告)日:2024-11-07

    申请号:US18772564

    申请日:2024-07-15

    Inventor: Jin Hong

    Abstract: Embodiments may relate to an electronic device that includes a modulator to modulate an in-phase portion of an input signal and a quadrature portion of the input signal. The modulator may include a III-V material on a silicon substrate. In some embodiments, the III-V material may include, for example, indium phosphide (InP). Other embodiments may be described or claimed.

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