公开(公告)号：US20120126931A1

公开(公告)日：2012-05-24

申请号：US13256182

申请日：2010-03-12

Applicant: Adam Joseph Howard Batting ,  Timothy Geoffrey Owen ,  Mats Standberg ,  Anurak Sawatdee ,  Xin Wang ,  Anna Malmstrom ,  Marie Nilsson ,  Lars-Olov Hennerdal

Inventor： Adam Joseph Howard Batting ,  Timothy Geoffrey Owen ,  Mats Standberg ,  Anurak Sawatdee ,  Xin Wang ,  Anna Malmstrom ,  Marie Nilsson ,  Lars-Olov Hennerdal

IPC: H01C7/10 ,  H01G9/035 ,  B05D5/12

CPC classification number: C08L1/28 ,  C08J5/20 ,  C08J2301/08 ,  C08J2301/26 ,  C08J2301/28 ,  C08L1/08 ,  C08L1/26 ,  C08L1/284 ,  C08L1/286 ,  C08L33/08 ,  C08L33/10 ,  C08L89/06 ,  G02F1/1525 ,  H01B1/122 ,  C08L2666/04 ,  C08L2666/26

Abstract: This invention relates to an electrolyte composition comprising an ionic liquid, a gellant selected from a cellulose derivative, gelatine and combinations thereof, and a radiation-curabie base. It also provides an electrochemical device comprising the electrolyte composition

Abstract translation: 本发明涉及一种电解质组合物，其包含离子液体，选自纤维素衍生物，明胶及其组合的胶凝剂，以及辐射 - 可乐定碱。 它还提供包含电解质组合物的电化学装置

公开(公告)号：US08143299B2

公开(公告)日：2012-03-27

申请号：US11577953

申请日：2005-10-25

Applicant: William J. Welsh ,  Youyi Peng ,  Xin Wang ,  Susan M. Keenan ,  Qiang Zhang ,  Sonia Arora

Inventor： William J. Welsh ,  Youyi Peng ,  Xin Wang ,  Susan M. Keenan ,  Qiang Zhang ,  Sonia Arora

IPC: A61K31/4196 ,  C07D249/08

CPC classification number: C07D249/08 ,  C07D403/04

Abstract: Substituted triazole compounds and pharmaceutical compositions thereof are presented. Also presented are methods for treating a pathology linked to a hyperproliferative disorder by administering the substituted triazole compounds to a patient in need thereof.

Abstract translation: 呈现了取代的三唑化合物及其药物组合物。 还提出了通过向有需要的患者施用取代的三唑化合物来治疗与过度增殖性病症相关的病理学的方法。

公开(公告)号：US08129930B2

公开(公告)日：2012-03-06

申请号：US12658102

申请日：2010-02-01

Applicant: Xin Wang ,  Jiangqun Chen ,  ShiPing Wang

Inventor： Xin Wang ,  Jiangqun Chen ,  ShiPing Wang

IPC: H02P7/00 ,  H02P3/20

CPC classification number: B65F1/1607 ,  B65F1/1638 ,  Y10T29/49815

Abstract: A method of controlling an operation of an induction actuated container cover includes the steps of (a) normally retaining a cover panel of the container cover in a closed position; (b) detecting a target movement of a user by a sensor; (c) generating a first actuating signal to an actuation unit when the sensor detects the target movement of the user; (d) generating an actuation output from the actuation unit to the cover panel of the container cover, wherein the actuation output contains a decelerating and torque enhancing force which moves the cover panel of the container cover at an opened position; (e) pivotally actuating the cover panel of the container cover at the opened position via the actuation output to expose a storage cavity, and (f) generating a second actuating signal to pivotally actuate the cover panel of the container cover back to the closed position.

Abstract translation: 控制感应致动容器盖的操作的方法包括以下步骤：（a）通常将容器盖的盖板保持在关闭位置; （b）通过传感器检测用户的目标移动; （c）当传感器检测到用户的目标移动时，向致动单元产生第一致动信号; （d）产生从所述致动单元到所述容器盖的盖板的致动输出，其中所述致动输出包含使所述容器盖的盖板在打开位置移动的减速和扭矩增强力; （e）经由所述致动输出端在所述打开位置处枢转地致动所述容器盖的盖板，以暴露存储空腔，以及（f）产生第二致动信号以将所述容器盖的盖板枢转地驱动回到所述关闭位置 。

公开(公告)号：US20120053222A1

公开(公告)日：2012-03-01

申请号：US13145906

申请日：2010-01-22

Applicant: Mark Gorrell ,  Sunmi Song ,  Xin Wang

Inventor： Mark Gorrell ,  Sunmi Song ,  Xin Wang

IPC: A61K31/40 ,  A61P3/00 ,  A61P3/10

CPC classification number: C07D211/60 ,  A61K31/275 ,  A61K31/397 ,  A61K31/401 ,  A61K31/426 ,  A61K31/435 ,  A61K31/69 ,  C07D205/02 ,  C07D207/16 ,  C07D277/06

Abstract: The invention relates to the prevention and treatment of metabolic abnormalities characterized by abnormal glucose metabolism, including diabetes mellitus and new onset diabetes mellitus through the use of fibroblast activation protein (FAP) selective inhibitors.

Abstract translation: 本发明涉及通过使用成纤维细胞活化蛋白（FAP）选择性抑制剂，预防和治疗特征为异常葡萄糖代谢的代谢异常，包括糖尿病和新发糖尿病。

公开(公告)号：US20120001897A1

公开(公告)日：2012-01-05

申请号：US13105690

申请日：2011-05-11

Applicant: Xin Wang

Inventor： Xin Wang

IPC: G06T1/00

CPC classification number: G06F9/4443 ,  G06F3/14 ,  G06F9/451

Abstract: A method, computer program product and system for automatically determining an object display mode to provide a display for objects. Information about the objects to be displayed and information about a display area is received. An object display mode is selected according to the received information about the display area and according to the received information about the objects to be displayed. A display for the objects is then provided with the selected object display mode. Switching can be made between a single-page display mode and a paging display mode, and whether in the single-page display mode or in the paging display mode, the user can conveniently browse and select the display objects, and the browsing efficiency and user experience of object display for the user are improved.

Abstract translation: 一种用于自动确定对象显示模式以提供对象的显示的方法，计算机程序产品和系统。 接收有关要显示的对象的信息以及有关显示区域的信息。 根据接收到的关于显示区域的信息，并根据接收到的关于要显示的对象的信息来选择对象显示模式。 然后用对象显示模式提供对象的显示。 可以在单页显示模式和寻呼显示模式之间切换，以及在单页显示模式还是在寻呼显示模式下，用户可以方便地浏览和选择显示对象，并且浏览效率和用户 改善了用户对象显示的体验。

公开(公告)号：US20120001153A1

公开(公告)日：2012-01-05

申请号：US13231559

申请日：2011-09-13

Applicant: Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

Inventor： Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

IPC: H01L29/15 ,  H01L29/12 ,  B82Y99/00

CPC classification number: H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

Abstract translation: 示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和 可以精确地控制每个纳米线的结晶度。 可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。 此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。 此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

公开(公告)号：US08040922B2

公开(公告)日：2011-10-18

申请号：US12044122

申请日：2008-03-07

Applicant: Xin Wang ,  Yuuta Nakaya ,  Syuusaku Suzuki ,  Michiharu Nakamura ,  JianMin Zhou ,  Hiroyuki Hayashi

Inventor： Xin Wang ,  Yuuta Nakaya ,  Syuusaku Suzuki ,  Michiharu Nakamura ,  JianMin Zhou ,  Hiroyuki Hayashi

IPC: H04J3/06

CPC classification number: H04L27/2656 ,  H04L27/2676

Abstract: The present invention relates to an apparatus and method of frame synchronization in broad band wireless communication systems. In an apparatus of frame synchronization in a mobile station, a time variant phase rotation compensator eliminates time variant phase rotation carried in received signals by conjugated multiplication between adjacent signal samples. Then, the processed signal is fed into a delay correlator to calculate a plurality of correlations between two successive frames. A local power calculator acquires an average power of several symbols centered on delayed correlation values. A normalizer normalizes the delayed correlation values with a local average power corresponding to the delayed correlation values. A maximum value detector selects the maximum value from normalized correlation values to trigger frame synchronizing and timing signals.

Abstract translation: 本发明涉及宽带无线通信系统中帧同步的装置和方法。 在移动台中的帧同步装置中，时变相位旋转补偿器通过相邻信号样本之间的共轭乘法来消除接收信号中携带的时变相位旋转。 然后，将经处理的信号馈送到延迟相关器中以计算两个连续帧之间的多个相关性。 局部功率计算器以延迟相关值为中心获取几个符号的平均功率。 归一化器用对应于延迟相关值的局部平均功率来对延迟的相关值进行归一化。 最大值检测器从归一化相关值中选择最大值以触发帧同步和定时信号。

公开(公告)号：US07928912B2

公开(公告)日：2011-04-19

申请号：US12171428

申请日：2008-07-11

Applicant: Wen-Hua Chen ,  Xin Wang ,  Zheng-He Feng

Inventor： Wen-Hua Chen ,  Xin Wang ,  Zheng-He Feng

IPC: H01Q9/04

CPC classification number: H01Q9/42 ,  H01Q5/371 ,  H01Q5/385

Abstract: A multiband antenna includes a long radiating branch, a short radiating branch, a short strip, a feed point, a grounding portion, a connecting portion, a long parasitic strip, and a short parasitic strip. The feed point, the long radiating branch, the short radiating branch, and the short strip are in a first plane. The grounding portion connects to the short strip. The connecting portion connects the long radiating branch, the short radiating branch, and the short strip. The long radiating branch, the short strip, and the connecting portion form a first inverted-L shaped antenna structure. The short radiating branch, the short strip, and the connecting portion form a second inverted-L shaped antenna structure. The long parasitic strip and the short parasitic strip are in a second plane and respectively connected to the grounding portion. The first plane is parallel to the second plane.

Abstract translation: 多波段天线包括长辐射支路，短辐射支路，短条带，馈电点，接地部分，连接部分，长寄生条和短寄生条。 馈电点，长辐射支路，短辐射支路和短条带处于第一平面。 接地部分连接到短条。 连接部分连接长辐射支路，短辐射支路和短条。 长辐射分支，短条和连接部分形成第一倒L形天线结构。 短辐射支路，短条带和连接部分形成第二倒L形天线结构。 长寄生条和短寄生条在第二平面内分别连接到接地部分。 第一平面平行于第二平面。

公开(公告)号：US07926977B2

公开(公告)日：2011-04-19

申请号：US12212136

申请日：2008-09-17

Applicant: Jeffrey M. Nall ,  Koushik Saha ,  Xin Wang ,  Kevin Carpenter ,  Douglas R. Halley ,  John Owens

Inventor： Jeffrey M. Nall ,  Koushik Saha ,  Xin Wang ,  Kevin Carpenter ,  Douglas R. Halley ,  John Owens

IPC: F21S4/00

CPC classification number: G09F13/22 ,  G09F13/04 ,  G09F2013/1895

Abstract: A lighting system generally includes a plurality of electrically interconnected modules. Each module includes a support, circuitry on the support, at least two light emitting diodes (“LEDs”) on the support and electrically connected to the circuitry, and a housing over the support for covering the circuitry. A first LED on a first surface of the support emits light in a first general direction and a second LED mounted on a second surface of the support emits light in a second general direction, which is opposite the first general direction.

Abstract translation: 照明系统通常包括多个电互连模块。 每个模块包括支撑件，支撑件上的电路，支撑件上的至少两个发光二极管（“LED”）和电连接到电路，以及用于覆盖电路的支撑件上的壳体。 支撑件的第一表面上的第一LED在第一大体方向上发光，并且安装在支撑件的第二表面上的第二LED在与第一总方向相反的第二大体方向上发光。

公开(公告)号：US20110070703A1

公开(公告)日：2011-03-24

申请号：US12549862

申请日：2009-08-28

Applicant: Weize Xiong ,  Zhiqiang Wu ,  Xin Wang

Inventor： Weize Xiong ,  Zhiqiang Wu ,  Xin Wang

IPC: H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/823814

Abstract: An integrated process flow for forming an NMOS transistor (104) and an embedded SiGe (eSiGe) PMOS transistor (102) using a stress memorization technique (SMT) layer (126). The SMT layer (126) is deposited over both the NMOS transistor (104) and PMOS transistor (102). The portion of SMT layer (126) over PMOS transistor (102) is anisotropically etched to form spacers (128) without etching the portion of SMT layer (126) over NMOS transistor (104). Spacers (128) are used to align the SiGe recess etch and growth to form SiGe source/drain regions (132). The source/drain anneals are performed after etching the SMT layer (126) such that SMT layer (126) provides the desired stress to the NMOS transistor (104) without degrading PMOS transistor (102).

Abstract translation: 一种用于使用应力存储技术（SMT）层（126）形成NMOS晶体管（104）和嵌入式SiGe（eSiGe）PMOS晶体管（102）的集成工艺流程。 SMT层（126）沉积在NMOS晶体管（104）和PMOS晶体管（102）两者之上。 在PMOS晶体管（102）上方的SMT层（126）的部分被各向异性蚀刻以形成间隔物（128），而不通过NMOS晶体管（104）蚀刻SMT层（126）的部分。 间隔物（128）用于对准SiGe凹陷蚀刻和生长以形成SiGe源极/漏极区域（132）。 在蚀刻SMT层（126）之后执行源极/漏极退火，使得SMT层（126）在不降低PMOS晶体管（102）的情况下向NMOS晶体管（104）提供期望的应力。