公开(公告)号：US20240286176A1

公开(公告)日：2024-08-29

申请号：US18469540

申请日：2023-09-18

Applicant: KCTECH CO., LTD.

Inventor： Keun Woo LEE ,  Dae Jung KANG ,  Byeong Jo PARK

IPC: B08B5/04 ,  B08B3/02 ,  B08B5/02 ,  H01L21/67

CPC classification number: B08B5/043 ,  B08B3/022 ,  B08B5/023 ,  H01L21/67051 ,  B08B2203/0211

Abstract: A substrate cleaning apparatus includes a stage on which a substrate is placed, a support unit configured to support the substrate and to rotate the substrate, and a cleaning unit configured to spray a dual fluid to clean the substrate, wherein the cleaning unit may include a spray nozzle including a spray hole opened toward the stage and configured to spray a dual fluid through the spray hole, a cover that may include an inlet surrounding at least a partial area of an outer circumferential surface of the spray hole, that may surround at least a partial area of an outer circumferential surface of the spray nozzle, and that may be spaced apart from the spray nozzle by a predetermined distance, and an air flow passage formed in a space between the cover and the spray nozzle and through which air sucked from the inlet flows.

公开(公告)号：US20230373042A1

公开(公告)日：2023-11-23

申请号：US18104592

申请日：2023-02-01

Applicant: KCTECH CO., LTD.

Inventor： Jun Ho SON

IPC: B23Q3/08

CPC classification number: B23Q3/088 ,  B23Q2703/04 ,  B23Q2717/00

Abstract: Disclosed is a substrate chuck. More particularly, a substrate chuck including a chucking film made of a flexible material capable of elastic deformation to cover a mounting region of an upper surface of a surface plate on which a substrate is to be mounted; and a substrate chuck for gripping the substrate by applying suction pressure to a lower part of the chucking film to form a vacuum between the chucking film and the substrate; and a substrate scrubbing apparatus including the substrate chuck are provided.

公开(公告)号：US20230339070A1

公开(公告)日：2023-10-26

申请号：US18136834

申请日：2023-04-19

Applicant: KCTECH CO., LTD.

Inventor： Ki Hyuk YANG ,  Sang Jeong WOO

IPC: B24B49/14 ,  B24B49/04 ,  B24B7/04

CPC classification number: B24B49/14 ,  B24B49/045 ,  B24B7/04

Abstract: Provided is a high-precision substrate polishing system. An apparatus for polishing a substrate includes a platen on which a polishing pad is seated and which is rotatable, a substrate carrier configured to grip a substrate and rotatable on an upper side of the platen, an infrared sensor located inside the platen and configured to measure a temperature of the substrate, and a controller configured to determine a polishing state of the substrate using a value measured by the infrared sensor.

公开(公告)号：US20230193071A1

公开(公告)日：2023-06-22

申请号：US18079883

申请日：2022-12-13

Applicant: KCTECH CO., LTD.

Inventor： Jin Seok YEOM ,  Seok Jo KIM

IPC: C09D143/04 ,  C09D7/61 ,  C09D7/20

CPC classification number: C09D143/04 ,  C09D7/61 ,  C09D7/20

Abstract: A surface treatment agent for an organic-inorganic hybrid composition is provided. The surface treatment agent includes a compound represented by one of the following Chemical Formulae 1 to 3.




In Chemical Formulae 1 to 3, R1 to R3 each include at least one of hydrogen (H), a saturated or unsaturated linear or branched C1 to C20 alkyl group, a silane group, a hydroxyl group, and an alkoxysilane group, and R4 includes H or a hydroxyl group.

公开(公告)号：US11597055B2

公开(公告)日：2023-03-07

申请号：US16400554

申请日：2019-05-01

Applicant: KCTECH CO., LTD.

Inventor： Jun Ho Son ,  Sung Ho Shin

IPC: B24B37/04 ,  B24B37/30 ,  B24B37/32 ,  B24B37/005

Abstract: Provided are a membrane and carrier head using the membrane for polishing apparatus. The membrane comprises a first fixing flap extending inwards from the upper part of a side portion, a second fixing flap extending upwards from the upper part of the side portion, wherein the second fixing flap has a first inclined part, a second inclined part and a third extending part of extending upwards whereby a compensation force generated by the inclined parts realize the constant pressing force to the edge of a substrate during a polishing process.

公开(公告)号：US20230065885A1

公开(公告)日：2023-03-02

申请号：US17671259

申请日：2022-02-14

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung CHAE ,  Seung Eun LEE ,  Geun Sik YUN

IPC: B25J9/04 ,  B25J11/00 ,  B65G61/00

Abstract: A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.

公开(公告)号：US20230061965A1

公开(公告)日：2023-03-02

申请号：US17671053

申请日：2022-02-14

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung Chae ,  Seung Eun Lee ,  Geun Sik Yun

IPC: H01L21/677 ,  B08B13/00 ,  B25J15/00 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

公开(公告)号：US20230025469A1

公开(公告)日：2023-01-26

申请号：US17863489

申请日：2022-07-13

Applicant: KCTECH CO., LTD.

Inventor： Jeong Gyu LEE ,  Hyo Jun Jang ,  Jun Ha Hwang

IPC: H01L21/321 ,  C01F17/235

Abstract: Provided is a new cerium-based particle and a polishing slurry composition including the same. The new cerium-based particle may include a self-assembly of fine particles and an organic material.

公开(公告)号：US11384255B2

公开(公告)日：2022-07-12

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won Yang ,  Jun Ha Hwang ,  Jung Yoon Kim ,  Kwang Soo Park

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20220195243A1

公开(公告)日：2022-06-23

申请号：US17552932

申请日：2021-12-16

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  Yun Su KIM

IPC: C09G1/02

Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.