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69 条记录 (耗时 0.026 秒)

    Structure of LiAlO2 substrate having ZnO buffer layer
    31.
    发明申请
    Structure of LiAlO2 substrate having ZnO buffer layer 有权
    具有ZnO缓冲层的LiAlO 2衬底的结构

    公开(公告)号：US20080233415A1

    公开(公告)日：2008-09-25

    申请号：US11808564

    申请日：2007-06-11

    申请人： Mitch M. C. Chou ,  Jih-Jen Wu ,  Wen-Ching Hsu

    发明人： Mitch M. C. Chou ,  Jih-Jen Wu ,  Wen-Ching Hsu

    IPC分类号： B32B15/04

    CPC分类号： C30B29/20 ,  C30B29/16 ,  H01L33/0066 ,  H01S2301/173

    摘要： A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.

    摘要翻译： 发现适用于氧化锌（ZnO）缓冲层的氧化锂铝（LiAlO 2 N 2）衬底。 ZnO缓冲层在LiAlO 2衬底上生长。 由于LiAlO 2衬底具有与ZnO缓冲层类似的结构，因此有效地消除了量子限制的Stark效应（QCSE）。 并且，通过本发明制造的光电器件，如发光二极管，压电材料或激光二极管，从而获得增强的发光效率。

    Method of manufacturing composite wafer structure
    32.
    发明申请
    Method of manufacturing composite wafer structure 有权
    复合晶片结构的制造方法

    公开(公告)号：US20070020873A1

    公开(公告)日：2007-01-25

    申请号：US11245163

    申请日：2005-10-07

    申请人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

    发明人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

    IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/30

    CPC分类号： H01L21/76256

    摘要： The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

    摘要翻译： 本发明提供一种制造复合晶片结构的方法。 特别地，根据本发明的方法是基于断裂力学理论来主动控制在复合晶片结构的制造过程中引起的断裂并进一步防止不希望的边缘损伤。 因此，根据本发明的方法可以提高关于复合晶片结构的工业量产的产率。

    CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME
    36.
    发明申请
    CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME 审中-公开
    晶体硅包括核心促进层及其制造方法

    公开(公告)号：US20170057829A1

    公开(公告)日：2017-03-02

    申请号：US15351035

    申请日：2016-11-14

    申请人： Sino-American Silicon Products Inc.

    发明人： Wen-Huai Yu ,  Cheng-Jui Yang ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Chieh Lan ,  Chan-Lu Su ,  Yu-Tsung Chiang ,  Sung-Lin Hsu ,  Wen-Ching Hsu ,  Chung-Wen Lan

    IPC分类号： C01B33/02 ,  H01L31/18

    CPC分类号： C01B33/02 ,  C01B33/021 ,  C30B11/002 ,  C30B28/06 ,  C30B29/06 ,  H01L31/182 ,  Y02E10/546 ,  Y10T428/259

    摘要： A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.

    摘要翻译： 制造多晶硅锭的方法包括：（a）将成核促进层装载到模具的底部; （b）在模具中的成核促进层上提供硅源; （c）加热模具，直到硅源完全熔化成硅熔体; （d）连续地控制关于硅熔体的至少一个热控制参数，以使硅熔体在成核促进层上成核，使得多个硅晶粒在垂直方向上生长; （e）控制所述至少一个热控制参数以使得所述多个硅晶粒能够连续生长，其平均晶粒尺寸在垂直方向上逐渐增加，直到整个硅熔体固化以获得多晶硅锭， 其中成核促进层通过在模具的底部上铺展多个单硅颗粒来加载。

    Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof
    40.
    发明授权
    Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof 有权
    通过使用异质衬底制造半导体衬底并在其制造期间再循环异质衬底的方法

    公开(公告)号：US08163651B2

    公开(公告)日：2012-04-24

    申请号：US12210004

    申请日：2008-09-12

    申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

    发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

    IPC分类号： H01L21/311

    CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254

    摘要： The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate.

    摘要翻译： 本发明公开了一种制造第一衬底的方法以及在制造第一衬底期间再循环第二衬底的方法。 第二衬底对于第一衬底是不均匀的。 首先，根据本发明的制造方法是制备第二衬底。 随后，制造方法是在第二衬底上沉积缓冲层。 然后，制造方法是将半导体材料层沉积在缓冲层上。 缓冲层有助于半导体材料层的外延生长，并且用作剥离层。 最后，利用蚀刻溶液，制造方法仅仅蚀刻剥离层，使第二衬底脱离半导体材料层，其中半导体材料层用作第一衬底。