公开(公告)号：US20190301661A1

公开(公告)日：2019-10-03

申请号：US16369479

申请日：2019-03-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Yu-Lin Chang ,  Chien-Cheng Kuo ,  Yu-Ho Ni ,  Chun-Chieh Lin

IPC: F16L59/065

Abstract: The proposed vacuum jacketed tube may deliver the high/low temperature fluid with less temperature-transfer, especially may delivery high/low temperature fluid through a flexible structure. The vacuum jacketed tube includes a tubular structure surrounding a pipe wherein the fluid is delivered therethrough. Also, the space between the tubular structure and the pipe may be vacuumed. Therefore, the heat transferred into and/or away the fluid may be minimized, especially if the tubular structure and the pipe is separated by at least one thermal insulator or is separated mutually. Moreover, the vacuum jacketed tube may be mechanically connected to the source/destination of the delivered fluid, even other vacuum jacketed tube, through the bellows and/or the rotary joint. Besides, the pipe may be surrounded by a Teflon bellows and the tubular structure may be surrounded by a steel bellows, so as to further reduce the heat transferred into/away the fluid delivered inside the pipe.

公开(公告)号：US20180315605A1

公开(公告)日：2018-11-01

申请号：US15911521

申请日：2018-03-05

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Steven Raymond Walther

IPC: H01L21/265

Abstract: A method for ion beam implantation is provided. The method provides an ion implantation with a multiple-geometric-orientation ion beam that accommodates a range of tilt angles. The range of tilt angles can be defined with a dose distribution specified across the range of tilt angles. The method comprises: acquiring ion implantation parameters, determining the number of exposure steps, selecting implantation parameters corresponding to the exposure steps, acquiring implantation data, defining a first implantation sequence, creating a multiple-geometric-orientation implant exposure sequence according to the first implantation sequence, and performing the ion implantation according to the multiple-geometric-orientation implant exposure sequence.

公开(公告)号：US20180131293A1

公开(公告)日：2018-05-10

申请号：US15689158

申请日：2017-08-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Te-Min Wang ,  Yu-Ho Ni ,  Chun-Chieh Lin ,  Chien-Chung Hou ,  Cheng-Mao Chien

IPC: H02N13/00 ,  H05F3/02 ,  G01R27/26

CPC classification number: H02N13/00 ,  G01R27/2605 ,  G01R31/2808 ,  G01R31/2831 ,  H01L21/67288 ,  H01L21/6833 ,  H01L21/68742 ,  H05F3/02

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

公开(公告)号：US09697988B2

公开(公告)日：2017-07-04

申请号：US14883538

申请日：2015-10-14

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Kourosh Saadatmand ,  Nicholas White

IPC: H01J37/00 ,  H01J37/30

CPC classification number: H01J37/3007 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

公开(公告)号：US20170125211A1

公开(公告)日：2017-05-04

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  B08B7/00 ,  H01J37/304 ,  H02N13/00

CPC classification number: H01J37/30 ,  B08B7/00 ,  B08B7/0035 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/30466 ,  H01L21/6833 ,  H02N13/00

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US20160225577A1

公开(公告)日：2016-08-04

申请号：US15097996

申请日：2016-04-13

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao BAI ,  Zhimin WAN ,  Donald Wayne BERRIAN

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。

公开(公告)号：US09368326B2

公开(公告)日：2016-06-14

申请号：US13919651

申请日：2013-06-17

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Richard F. McRay

IPC: G01N23/00 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/20285

Abstract: A scan head assembled to a scan arm for an ion implanter and a scan arm using the same are provided, wherein the scan head comprises a case, a shaft assembly, an ESC, a first driving mechanism and a second driving mechanism. The case has a normal center line. The shaft assembly passes through a first side of the case and has a twist axis, a first pivot point fixed relative to the case and a first end located outside the case. The ESC is fastened on the first end and capable of holding a work piece. The first driving mechanism is capable of driving the shaft assembly, the ESC and the work piece to tilt relative to the normal center line. The second driving mechanism is capable of driving the shaft assembly, the ESC and the work piece to rotate about the twist axis.

Abstract translation: 提供了组装到用于离子注入机的扫描臂和使用其的扫描臂的扫描头，其中扫描头包括壳体，轴组件，ESC，第一驱动机构和第二驱动机构。 案件有正常的中心线。 轴组件穿过壳体的第一侧并且具有扭转轴线，相对于壳体固定的第一枢转点和位于壳体外部的第一端部。 ESC紧固在第一端并能够固定工件。 第一驱动机构能够驱动轴组件，ESC和工件相对于正常中心线倾斜。 第二驱动机构能够驱动轴组件，ESC和工件围绕扭转轴线旋转。

公开(公告)号：US20160133469A1

公开(公告)日：2016-05-12

申请号：US14752522

申请日：2015-06-26

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Zhimin WAN ,  Kourosh SAADATMAND ,  Wilhelm P. PLATOW ,  Ger-Pin LIN ,  Ching-I LI ,  Rekha PADMANABHA ,  Gary N. CAI

IPC: H01L21/265

CPC classification number: H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

Abstract: A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

Abstract translation: 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US08895944B2

公开(公告)日：2014-11-25

申请号：US13745426

申请日：2013-01-18

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Richard F. McRay

IPC: H01J37/317 ,  H01J37/20 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6831 ,  H01L21/68764 ,  Y10T279/23

Abstract: A scan head assembled to a scan arm for an ion implanter and a scan arm using the same are provided, wherein the scan head is capable of micro tilting a work piece and comprises a case, a shaft assembly, an electrostatic chuck, a first driving mechanism and a micro-tilt mechanism. The shaft assembly passes through a first side of the case and has a twist axis. The electrostatic chuck is fastened on a first end of the shaft assembly outside the case for holding the work piece. The first driving mechanism is disposed within the case and capable of driving the shaft assembly and the ESC to rotate about the twist axis. The micro-tilt mechanism is disposed within the case and capable of driving the shaft assembly and the ESC to tilt relative to the case.

Abstract translation: 提供了组装到用于离子注入机的扫描臂和使用其的扫描臂的扫描头，其中扫描头能够微型倾斜工件，并且包括壳体，轴组件，静电卡盘，第一驱动 机构和微倾斜机制。 轴组件穿过壳体的第一侧并且具有扭转轴线。 静电卡盘被紧固在轴组件的外部的第一端上，用于保持工件。 第一驱动机构设置在壳体内并且能够驱动轴组件和ESC围绕扭转轴线旋转。 微倾斜机构设置在壳体内并且能够驱动轴组件和ESC相对于壳体倾斜。

公开(公告)号：US20140212595A1

公开(公告)日：2014-07-31

申请号：US13769189

申请日：2013-02-15

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Xiao BAI ,  Zhimin WAN ,  Donald Wayne BERRIAN

IPC: H01J29/46 ,  C23C14/48

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。