公开(公告)号：US20120068218A1

公开(公告)日：2012-03-22

申请号：US12884570

申请日：2010-09-17

Applicant: Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Ping Hung ,  Chien Ling Hwang ,  Chen-Hua Yu

Inventor： Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Ping Hung ,  Chien Ling Hwang ,  Chen-Hua Yu

IPC: H01L33/62 ,  H01L21/50

CPC classification number: H01L33/642 ,  H01L33/486 ,  H01L33/647 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2933/0033 ,  H01L2933/0075 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present disclosure provides a method of packaging for a photonic device, such as a light-emitting diode device. The packaging includes an insulating structure. The packaging includes first and second conductive structures that each extend through the insulating structure. A substantial area of a bottom surface of the light-emitting diode device is in direct contact with a top surface of the first conductive structure. A top surface of the light-emitting diode device is bonded to the second conductive structure through a bonding wire.

Abstract translation: 本公开提供了一种用于光子器件（例如发光二极管器件）的封装方法。 包装包括绝缘结构。 该包装包括各自延伸穿过绝缘结构的第一和第二导电结构。 发光二极管器件的底面的实质区域与第一导电结构的顶表面直接接触。 发光二极管器件的顶表面通过接合线接合到第二导电结构。

公开(公告)号：US08058082B2

公开(公告)日：2011-11-15

申请号：US12189635

申请日：2008-08-11

Applicant: Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

Inventor： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

公开(公告)号：US08044409B2

公开(公告)日：2011-10-25

申请号：US12189562

申请日：2008-08-11

Applicant: Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

Inventor： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC: H01L27/15

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

Abstract translation: 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。

公开(公告)号：US20110198721A1

公开(公告)日：2011-08-18

申请号：US12704695

申请日：2010-02-12

Applicant: Ku-Feng YANG ,  Weng-Jin Wu ,  Hsin-Hsien Lu ,  Chia-Lin Yu ,  Chu-Sung Shih ,  Fu-Chi Hsu ,  Shau-Lin Shue

Inventor： Ku-Feng YANG ,  Weng-Jin Wu ,  Hsin-Hsien Lu ,  Chia-Lin Yu ,  Chu-Sung Shih ,  Fu-Chi Hsu ,  Shau-Lin Shue

IPC: H01L23/544 ,  H01L21/304 ,  H01L21/306 ,  H01L29/06 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L2224/02372

Abstract: A method for thinning a wafer is provided. In one embodiment, a wafer is provided having a plurality of semiconductor chips, the wafer having a first side and a second side opposite the first side, wherein each of the chips includes a set of through silicon vias (TSVs), each of the TSVs substantially sealed by a liner layer and a barrier layer. A wafer carrier is provided for attaching to the second side of the wafer. The first side of the wafer is thinned and thereafer recessed to partially expose portions of the liner layers, barrier layers and the TSVs protruding from the wafer. An isolation layer is deposited over the first side of the wafer and the top portions of the liner layers, barrier layers and the TSVs. Thereafter, an insulation layer is deposited over the isolation layer. The insulation layer is then planarized to expose top portions of the TSVs. A dielectric layer is deposited over the planarized first side of the wafer. One or more electrical contacts are formed in the dielectric layer for electrical connection to the exposed one or more TSVs.

Abstract translation: 提供了一种用于薄化晶片的方法。 在一个实施例中，提供具有多个半导体芯片的晶片，晶片具有第一侧和与第一侧相对的第二侧，其中每个芯片包括一组穿通硅通孔（TSV），每个TSV 基本上被衬垫层和阻挡层密封。 提供晶片载体以附接到晶片的第二侧。 晶片的第一侧变薄并且凹陷以部分地暴露衬里层，阻挡层和从晶片突出的TSV的部分。 隔离层沉积在晶片的第一侧和衬垫层，阻挡层和TSV的顶部之上。 此后，绝缘层沉积在隔离层上。 然后将绝缘层平坦化以暴露TSV的顶部。 电介质层沉积在晶片的平坦化第一侧上。 在电介质层中形成一个或多个电触头，用于与暴露的一个或多个TSV电连接。

公开(公告)号：US07947588B2

公开(公告)日：2011-05-24

申请号：US12424153

申请日：2009-04-15

Applicant: Chen-Hua Yu ,  Cheng-Tung Lin ,  Hsiang-Yi Wang ,  Yung-Sheng Chiu ,  Chia-Lin Yu

Inventor： Chen-Hua Yu ,  Cheng-Tung Lin ,  Hsiang-Yi Wang ,  Yung-Sheng Chiu ,  Chia-Lin Yu

IPC: H01L21/4763

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and method for fabricating a semiconductor device for providing improved work function values and thermal stability is disclosed. The semiconductor device comprises a semiconductor substrate; an interfacial dielectric layer over the semiconductor substrate; a high-k gate dielectric layer over the interfacial dielectric layer; and a doped-conducting metal oxide layer over the high-k gate dielectric layer.

Abstract translation: 公开了一种用于制造用于提供改进的功函数值和热稳定性的半导体器件的半导体器件和方法。 半导体器件包括半导体衬底; 半导体衬底上的界面介电层; 界面介电层上的高k栅介质层; 以及在高k栅极电介质层上方的掺杂导电金属氧化物层。

公开(公告)号：US07875534B2

公开(公告)日：2011-01-25

申请号：US12191013

申请日：2008-08-13

Applicant: Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

Inventor： Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC: H01L21/205

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02617 ,  H01L21/02664

Abstract: A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.

Abstract translation: 形成半导体结构的方法包括提供基板; 在衬底上形成缓冲/成核层; 在缓冲/成核层上形成III族氮化物（III族氮化物）层; 并对该III族氮化物层进行氮化。 形成III族氮化物层的步骤包括金属有机化学气相沉积。

公开(公告)号：US20100051965A1

公开(公告)日：2010-03-04

申请号：US12509339

申请日：2009-07-24

Applicant: Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou ,  Hung-Ta Lin

Inventor： Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou ,  Hung-Ta Lin

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/223 ,  H01L21/26506 ,  H01L33/025

Abstract: A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed.

Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置形成在具有含碳层的基板上。 将碳原子引入衬底中以防止或减少来自上层金属/金属合金过渡层的原子与衬底的原子的混合。 以这种方式，保持可以形成LED结构的晶体结构。

公开(公告)号：US20100032718A1

公开(公告)日：2010-02-11

申请号：US12189562

申请日：2008-08-11

Applicant: Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

Inventor： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC: H01L33/00 ,  H01L29/20

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

Abstract translation: 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。

公开(公告)号：US20100015787A1

公开(公告)日：2010-01-21

申请号：US12191013

申请日：2008-08-13

Applicant: Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

Inventor： Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC: H01L21/205

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02617 ,  H01L21/02664

Abstract: A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.

Abstract translation: 形成半导体结构的方法包括提供基板; 在衬底上形成缓冲/成核层; 在缓冲/成核层上形成III族氮化物（III族氮化物）层; 并对该III族氮化物层进行氮化。 形成III族氮化物层的步骤包括金属有机化学气相沉积。

公开(公告)号：US20100001302A1

公开(公告)日：2010-01-07

申请号：US12166020

申请日：2008-07-01

Applicant: Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

Inventor： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

IPC: H01L33/00

CPC classification number: H01L33/10 ,  H01L33/32

Abstract: A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.

Abstract translation: 一种器件结构包括：衬底; 在衬底上的III族氮化物层; III族氮化物层上的金属氮化物层; 以及金属氮化物层上方的发光层。 金属氮化物层用作反射由发光层发射的光的反射器。