公开(公告)号：US07988872B2

公开(公告)日：2011-08-02

申请号：US11410859

申请日：2006-04-24

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC: H01T23/00

CPC classification number: H01L21/6831 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: In a plasma reactor having an electrostatic chuck with an electrostatic chuck top surface for supporting a workpiece, thermal transfer medium flow channels in the interior of the electrostatic chuck, a method for controlling temperature of the workpiece during plasma processing includes circulating thermal transfer medium through the thermal transfer medium flow passages and supplying a thermally conductive gas between the workpiece and the electrostatic chuck top surface, and changing thermal transfer medium thermal conditions of thermal transfer medium flowing in the thermal transfer medium flow channels so as to change the temperature of the electrostatic chuck at a first rate limited by the thermal mass of the electrostatic chuck. The method further includes changing the backside gas pressure of the thermally conductive gas so as to change the temperature of the workpiece at a second rate faster than the first rate.

Abstract translation: 在具有用于支撑工件的静电卡盘顶面的静电卡盘的等离子体反应器中，静电卡盘内部的热转印介质流动通道，用于在等离子体处理期间控制工件的温度的方法包括循环热转印介质通过 热转印介质流动通道，并且在工件和静电卡盘顶表面之间提供导热气体，以及改变在热转印介质流动通道中流动的热转印介质的热转印介质热条件，以便改变静电卡盘的温度 以由静电卡盘的热质量限制的第一速率。 该方法还包括改变导热气体的背侧气体压力，以便以比第一速率更快的速度改变工件的温度。

公开(公告)号：US20110180233A1

公开(公告)日：2011-07-28

申请号：US12886258

申请日：2010-09-20

Applicant: KALLOL BERA ,  JAMES D. CARDUCCI ,  HAMID NOORBAKHSH ,  LARRY D. ELIZAGA ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN

Inventor： KALLOL BERA ,  JAMES D. CARDUCCI ,  HAMID NOORBAKHSH ,  LARRY D. ELIZAGA ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN

IPC: F28C3/00

CPC classification number: F28F7/02 ,  H01L21/67109

Abstract: An apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead is provided herein. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead may include a showerhead having a substrate facing surface and one or more plenums for providing one or more process gases through a plurality of gas distribution holes formed through the substrate facing surface of the showerhead; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the showerhead to flow a heat transfer fluid.

Abstract translation: 本发明提供一种用于控制喷头的面向基板表面的热均匀性的装置。 在一些实施例中，喷头的面向衬底的表面的热均匀性可被控制得更均匀。 在一些实施例中，喷头的面向衬底的表面的热均匀性可以以期望的图案被控制为不均匀的。 在一些实施例中，用于控制喷头的面向基板的表面的热均匀性的装置可以包括具有基板对向表面的喷头和一个或多个增压室，用于通过形成的多个气体分配孔来提供一个或多个处理气体 喷头的面向基板的表面; 以及多个流动路径，其具有设置在所述喷头内的基本上等效的流体传导以流过传热流体。

公开(公告)号：US20110157760A1

公开(公告)日：2011-06-30

申请号：US12884967

申请日：2010-09-17

Applicant: MICHAEL D. WILLWERTH ,  DAVID PALAGASHVILI ,  DOUGLAS A. BUCHBERGER, JR. ,  MICHAEL G. CHAFIN

Inventor： MICHAEL D. WILLWERTH ,  DAVID PALAGASHVILI ,  DOUGLAS A. BUCHBERGER, JR. ,  MICHAEL G. CHAFIN

IPC: H01L21/687

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.

Abstract translation: 本文提供了静电卡盘的实施例。 在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定， 沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合以形成其间的非线性界面的阶梯状内侧壁; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。

公开(公告)号：US20100314046A1

公开(公告)日：2010-12-16

申请号：US12855670

申请日：2010-08-12

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: H01L21/3065

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

Abstract translation: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和切割器膨胀阀的制冷回路，用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

公开(公告)号：US20090314433A1

公开(公告)日：2009-12-24

申请号：US12144463

申请日：2008-06-23

Applicant: Daniel J. Hoffman ,  Douglas A. Buchberger, JR. ,  Semyon L. Kats ,  Dan Katz

Inventor： Daniel J. Hoffman ,  Douglas A. Buchberger, JR. ,  Semyon L. Kats ,  Dan Katz

IPC: C23F1/00 ,  H01L21/683

CPC classification number: H01L21/6833

Abstract: An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.

Abstract translation: 用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。 上电极的外周与环形电极的内周重叠。 在一个实施例中，上电极和环形电极通过钼通孔电耦合。 在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。 在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。

公开(公告)号：US20090250432A1

公开(公告)日：2009-10-08

申请号：US12082074

申请日：2008-04-07

Applicant: Daniel J. Hoffman ,  Ezra Robert Gold ,  Douglas H. Burns ,  Douglas A. Buchberger, JR. ,  Michael Charles Kutney ,  Jang Gyoo Yang

Inventor： Daniel J. Hoffman ,  Ezra Robert Gold ,  Douglas H. Burns ,  Douglas A. Buchberger, JR. ,  Michael Charles Kutney ,  Jang Gyoo Yang

IPC: H01L21/3065 ,  C23C16/513

CPC classification number: C23C16/503 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32935

Abstract: A method of processing a workpiece in a chamber of a plasma reactor having a set of plural electromagnet coils includes selecting plural predetermined plasma density distributions relative to a workpiece surface, the predetermined plasma density distributions corresponding to different sets of D.C. currents in the coils, and flowing a process gas into the chamber and generating a plasma in the chamber. The method further includes switching plasma in the chamber between the predetermined plasma density distributions by switching D.C. currents through the coils between the different sets of D.C. currents.

Abstract translation: 一种在具有一组多个电磁线圈的等离子体反应器的腔室中处理工件的方法包括：相对于工件表面选择多个预定等离子体密度分布，对应于线圈中的不同DC电流集合的预定等离子体密度分布;以及 将工艺气体流入室中并在室中产生等离子体。 该方法还包括通过在不同的直流电流组之间切换通过线圈的直流电流来在腔室内切换预定等离子体密度分布之间的等离子体。

公开(公告)号：US07186943B2

公开(公告)日：2007-03-06

申请号：US11105307

申请日：2005-04-12

Applicant: Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

Inventor： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

IPC: B23K10/06

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract translation: 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

公开(公告)号：US06586886B1

公开(公告)日：2003-07-01

申请号：US10027732

申请日：2001-12-19

Applicant: Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

Inventor： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

IPC: H01J724

CPC classification number: H01J37/3244

Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

Abstract translation: 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

公开(公告)号：US09248509B2

公开(公告)日：2016-02-02

申请号：US14447557

申请日：2014-07-30

Applicant: Hamid Tavassoli ,  Surajit Kumar ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr.

Inventor： Hamid Tavassoli ,  Surajit Kumar ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr.

IPC: B23K10/00 ,  B23B31/28 ,  H01L21/67 ,  H01L21/683 ,  H05H1/46 ,  B23Q3/15

CPC classification number: B23B31/28 ,  B23B2231/24 ,  B23Q3/15 ,  H01L21/67069 ,  H01L21/6833 ,  H05H1/46 ,  Y10T279/23

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract translation: 一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面外部的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

公开(公告)号：US09123762B2

公开(公告)日：2015-09-01

申请号：US12910547

申请日：2010-10-22

Applicant: Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Andrew Nguyen ,  Anchel Sheyner

Inventor： Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Andrew Nguyen ,  Anchel Sheyner

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/6831

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract translation: 本文公开了用于处理衬底的装置。 在一些实施例中，衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件，衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极，用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体，其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极，其中内部导体是管状的，并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸 的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层，所述外部电介质层将所述外部导体与所述内部导体电隔离。 外部导体可以耦合到电气接地。