Abstract:
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
Abstract:
A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the dopant of the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.
Abstract:
Provided is an imaging device having a stand connector that can assume an open position for allowing connection with a stand or tripod and a closed position when not coupled with the stand. The stand connector of the imaging device includes a connector body including a hollow cavity and a female screw capable of coupling with a corresponding male screw of the stand, an insert received in the cavity of the connector body and moveable between an open position allowing coupling of the stand by screwing the screws of the connector body and the stand and a closed position substantially covering an open end of the cavity in the connector body when not coupling with the stand, and biasing means configured to bias the insert to the closed position.
Abstract:
The invention relates to nucleic acid sequences encoding a bovine tumor necrosis factor receptor-I (TNF-RI). Also within the invention is a soluble bovine TNF-RI, which is a potent inhibitor of bovine tumor necrosis factor-α (TNF-α). The invention demonstrates that soluble bovine TNF-RI has therapeutic value as an inhibitor of TNF in cattle suffering from coliform mastitis or other inflammatory disease.
Abstract:
A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silicon light-emitting device panel and emitting visible light after being excited by light emitted from the silicon light-emitting devices, wherein each of the silicon light-emitting devices comprises: a doping region formed on a surface of the substrate in such a way that the substrate is doped with a predetermined dopant of the opposite type to the substrate to a depth so that recombination of electron-hole pairs by quantum confinement effect at a p-n junction leads to light emission; and electrodes patterned on the substrate to allow the silicon light-emitting devices to emit light according to an image signal. The flat panel display includes the low-priced silicon light-emitting device panel having a two dimensional array of the silicon light-emitting devices formed on the inexpensive silicon-based substrate through series semiconductor manufacture processes. Therefore, the flat panel display can be manufactured at low cost. Furthermore, unlike a plasma display panel, a high voltage or a gas sealing process for discharge is not required, thereby increasing stability and reliability.
Abstract:
A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.
Abstract:
The present invention relates to an artificial cartilage containing mesenchymal stem cell (MSC)-like dedifferentiated cells obtained by passage culturing costal chondrocytes, and a preparation process thereof.
Abstract:
Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle precursors into nanowires. According to the method, highly rectilinear and well-ordered nanowires can be produced in a simple manner.
Abstract:
Disclosed is an inorganic electroluminescent device. The inorganic electroluminescent device comprises a hole transport layer, a light-emitting layer, an inorganic electron transport layer and an electron injecting electrode sequentially formed on a hole injecting electrode wherein an insulating layer is formed between the electron injecting electrode and the inorganic electron transport layer.Further disclosed are a method for fabricating the electroluminescent device and an electronic device comprising the electroluminescent device.The inorganic electroluminescent device achieves uniform light emission from the entire light-emitting surface of the device, resulting in an improvement in the reliability and stability of the device. The inorganic electroluminescent device is suitable for use in the manufacture of electronic devices, including display devices, illuminators and backlight units.
Abstract:
A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.