公开(公告)号：US20120019496A1

公开(公告)日：2012-01-26

申请号：US13258775

申请日：2009-10-27

申请人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

发明人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

IPC分类号： G09G5/00 ,  H01L31/0368 ,  H01L29/786 ,  H01L31/0376

CPC分类号： G01J1/46 ,  G01J1/0209 ,  G01J1/0228 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L27/12 ,  H01L27/14612 ,  H01L27/14692

摘要： A field-effect transistor (62a) has a back gate (62ag2). The back gate (62ag2), a cathode of a photodiode (62b), and a first end of a first capacitor (62c) are connected with each other via a first node (netA). An anode of the photodiode (62b) is connected with a first line (Vrst). A second end of the first capacitor (62c) is connected with a second line (Csn). A gate (62ag1) of the field-effect transistor (62a) is connected with a third line (Vrwn), and a drain of the filed-effect transistor (62a) is connected with a fourth line (Vsm). A source of the field-effect transistor (62a) is an output of an output amplifier (62a).

摘要翻译： 场效应晶体管（62a）具有背栅（62ag2）。 背栅（62ag2），光电二极管（62b）的阴极和第一电容器（62c）的第一端经由第一节点（netA）彼此连接。 光电二极管（62b）的阳极与第一线（Vrst）连接。 第一电容器（62c）的第二端与第二线（Csn）连接。 场效应晶体管（62a）的栅极（62ag1）与第三线（Vrwn）连接，并且场效应晶体管（62a）的漏极与第四线（Vsm）连接。 场效应晶体管（62a）的源极是输出放大器（62a）的输出。

公开(公告)号：US20100315578A1

公开(公告)日：2010-12-16

申请号：US12446071

申请日：2007-09-07

申请人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Junya Shimada

发明人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Junya Shimada

IPC分类号： G02F1/1335 ,  G02F1/13

CPC分类号： G02F1/133553

摘要： A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.

摘要翻译： 提供了具有高反射效率和高图像质量的透反射型和反射型液晶显示装置。 本发明的液晶显示装置是具有将入射光反射到显示面的反射区域的液晶显示装置，其中反射区域包括金属层，形成在金属层上的绝缘层，形成的半导体层 在绝缘层上形成反射层; 在金属层，绝缘层和半导体层中的至少一个中形成多个凹部; 根据多个凹部，在反射区域中的反射层中形成多个凹痕; 并且所述多个凹部中的至少两个凹部的边缘部之间的最短距离a为4μm以下。

公开(公告)号：US20100053517A1

公开(公告)日：2010-03-04

申请号：US12595782

申请日：2007-12-27

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

IPC分类号： G02F1/1335 ,  H01L21/77

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236

摘要： Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.

摘要翻译： 具有高图像质量的透反射型和反射型液晶显示装置具有良好的生产效率。 根据本发明的液晶显示装置是一种液晶显示装置，包括： 第一基板和第二基板，液晶插入其间; 第一电极和第二电极，形成在第一基板上，用于施加用于控制液晶取向的电压; 具有电连接到第一电极的电极的晶体管; 金属层形成在第一基板上并且包括突起，凹部或孔; 以及反射层，形成在第一基板上的金属层的上方，用于将入射光反射到显示面。 金属层由与晶体管的栅电极相同的材料制成。 反射层包括根据金属层的突起，凹部或孔形成的突起，凹部或水平差。

公开(公告)号：US20090195741A1

公开(公告)日：2009-08-06

申请号：US12306959

申请日：2007-06-08

申请人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai

发明人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai

IPC分类号： G02F1/1335 ,  G02F1/13

CPC分类号： G02F1/133555 ,  G02F1/133345 ,  G02F1/133371 ,  G02F1/136227

摘要： An objective of the present invention is to provide a transflective type liquid crystal display device and a reflection type liquid crystal display device having a high image quality at low cost. A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection section for reflecting incident light toward a display surface. The reflection section includes an insulating layer; a semiconductor layer formed above the insulating layer; and a reflective layer formed above the semiconductor layer. On a surface of the reflective layer, a first recess and a second recess which is located inside the first recess are formed. The reflection section includes a first region and a second region which differ in a total thickness of a thickness of the insulating layer and a thickness of the semiconductor layer. The first recess and the second recess are formed in accordance with a cross-sectional shape of at least one of the insulating layer and the semiconductor layer.

摘要翻译： 本发明的目的是提供一种低成本的具有高图像质量的半透射型液晶显示装置和反射型液晶显示装置。 根据本发明的液晶显示装置是具有用于将入射光反射到显示面的反射部的液晶显示装置。 反射部分包括绝缘层; 形成在绝缘层之上的半导体层; 以及形成在半导体层上方的反射层。 在反射层的表面上形成有位于第一凹部内的第一凹部和第二凹部。 反射部分包括绝缘层的厚度和半导体层的厚度的总厚度不同的第一区域和第二区域。 第一凹部和第二凹部根据绝缘层和半导体层中的至少一个的截面形状形成。

公开(公告)号：US20090195740A1

公开(公告)日：2009-08-06

申请号：US12299138

申请日：2007-04-05

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara

IPC分类号： G02F1/1335 ,  G02F1/13

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F2001/136281

摘要： A liquid crystal display device, which can be a transflective-type or a reflection-type, includes a reflection section arranged to reflect incident light toward a display surface, wherein the reflection section includes a reflective layer provided on a substrate, and includes a first recess formed in a surface of the reflective layer and a second recess formed in the surface of the reflective layer in the first recess. The first recess corresponds to an aperture of a Cs metal layer, and the second recess corresponds to an aperture of a semiconductor layer. The transflective-type or reflection-type liquid crystal display device has a high image quality at low cost.

摘要翻译： 可以是透反射型或反射型的液晶显示装置包括反射部分，其被布置成将入射光反射到显示表面，其中反射部分包括设置在基板上的反射层，并且包括第一 形成在反射层的表面中的凹部和形成在第一凹部中的反射层的表面中的第二凹部。 第一凹部对应于Cs金属层的孔，第二凹槽对应于半导体层的孔。 半反射型或反射型液晶显示装置以低成本具有高图像质量。

公开(公告)号：US20090185127A1

公开(公告)日：2009-07-23

申请号：US12375049

申请日：2007-06-21

申请人： Shinya Tanaka ,  Hajime Imai ,  Chikanori Tsukamura ,  Yoshiharu Kataoka

发明人： Shinya Tanaka ,  Hajime Imai ,  Chikanori Tsukamura ,  Yoshiharu Kataoka

IPC分类号： G02F1/1345 ,  G02F1/1333

CPC分类号： G02F1/133305 ,  B60R11/0235 ,  B60R13/10 ,  G02F1/13452 ,  G02F1/13454

摘要： A display device includes a curved insulative substrate. A substrate line includes first input substrate lines electrically connected to first driving elements and first output substrate lines electrically connected to first lines and the first driving elements. The first output substrate lines are provided so as to be closer to the displaying region than are the first input substrate lines. Each first driving element has a rectangular shape with two longer sides and two shorter sides, the first driving element being mounted so that the longer sides are parallel or substantially parallel to the direction in which the first lines extend.

摘要翻译： 显示装置包括弯曲绝缘基板。 衬底线包括电连接到第一驱动元件的第一输入衬底线和与第一线电连接的第一输出衬底线和第一驱动元件。 第一输出基板线设置成比第一输入基板线更靠近显示区域。 每个第一驱动元件具有两个长边和两个短边的矩形形状，第一驱动元件被安装成使得长边平行或基本平行于第一线延伸的方向。

公开(公告)号：US4967883A

公开(公告)日：1990-11-06

申请号：US369227

申请日：1989-06-21

申请人： Shozo Kito ,  Shoichi Harada ,  Hajime Imai ,  Tsuyoshi Tanoue ,  Shigetoshi Miyoshi

发明人： Shozo Kito ,  Shoichi Harada ,  Hajime Imai ,  Tsuyoshi Tanoue ,  Shigetoshi Miyoshi

IPC分类号： B60R25/02 ,  F16H59/10 ,  F16H59/74 ,  F16H61/22

CPC分类号： B60R25/02144 ,  F16H59/10 ,  F16H2059/746 ,  F16H61/22 ,  Y10T477/656 ,  Y10T70/5898 ,  Y10T70/5925 ,  Y10T70/5938 ,  Y10T70/5956 ,  Y10T74/20238

摘要： A shift lever device is used when an assembly of a vehicle is performed while the vehicle is being moved in a state where a shift lever of an automatic transmission gear is in a neutral state, i.e., in a state where wheels can be freely turned. A movable body is driven by a detent pin moved in the acial direction of the shift lever in a state where the shift lever is at a park position. The movable body is coupled to a steering locking device. An operator moves the movable body to a position at which it can be driven by the detent pin of the shift lever in spite of the fact that the shift lever is not at the parking position, so as to enable an igition key to be removed from the steering locking device.

摘要翻译： 当在自动变速器齿轮的变速杆处于中立状态的状态下，即车轮可以自由转动的状态下，当车辆被移动时执行车辆组件时，使用变速杆装置。 在变速杆处于停车位置的状态下，由变速杆的旋转方向移动的止动销来驱动移动体。 可移动体联接到转向锁定装置。 尽管事实上变速杆不在停车位置，操作者将可移动体移动到可由变速杆的止动销驱动的位置，以使得能够将钥匙从 转向锁定装置。

公开(公告)号：US4947967A

公开(公告)日：1990-08-14

申请号：US265445

申请日：1988-11-01

申请人： Shozo Kito ,  Shoichi Harada ,  Hajime Imai ,  Tadao Muramatsu

发明人： Shozo Kito ,  Shoichi Harada ,  Hajime Imai ,  Tadao Muramatsu

IPC分类号： B60T7/00 ,  B60K20/02 ,  B60K28/10 ,  B60R25/06 ,  F16H59/10 ,  F16H59/54 ,  F16H59/74 ,  F16H61/18 ,  F16H61/22 ,  F16H63/12 ,  F16H63/34 ,  G05G5/06 ,  B60K41/26

CPC分类号： B60R25/02144 ,  F16H59/10 ,  F16H61/22 ,  F16H2059/746 ,  F16H2061/223 ,  F16H59/54 ,  Y10T477/649 ,  Y10T74/20238

摘要： A locking apparatus for a shift lever in an automatic transmission of a vehicle which permits the shift lever to move from a vehicle non-driving position to a vehicle driving position by means of an electrically operated member, such as a solenoid, in the presence of a predetermined condition such as that of applying a brake pedal. When the shift lever is located in the non-driving position, a detent pin for inhibiting the shift lever from shifting is engaged with a lock recess formed in a lock member and the lock member is held in a lock position by means for the electrically operated member. Even though the electrically operated member fails to function due to a malfunction or the like, an occupant can manually shift the shift lever from the non-driving position to the driving position in order to move the vehicle.

公开(公告)号：US09111810B2

公开(公告)日：2015-08-18

申请号：US13643652

申请日：2011-03-02

申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

公开(公告)号：US08749528B2

公开(公告)日：2014-06-10

申请号：US13379783

申请日：2010-02-26

申请人： Hajime Imai ,  Takuya Watanabe ,  Atsuhito Murai ,  Hideki Kitagawa

发明人： Hajime Imai ,  Takuya Watanabe ,  Atsuhito Murai ,  Hideki Kitagawa

IPC分类号： G06F3/042

CPC分类号： H01L27/1214 ,  G02F1/13318 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/3225 ,  G09G2300/0809 ,  G09G2360/14 ,  H01L27/12 ,  H01L27/3269 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/1136 ,  Y02E10/546 ,  Y02E10/548

摘要： A display panel of an organic EL display device includes a photo-detection section that detects reflected light when a screen is touched by a finger or the like. The photo-detection section includes a photodiode that receives the reflected light, and an output amplifier that outputs an output voltage corresponding to the amount of the received light. If an a-Si diode is used for such a photodiode, a sufficiently large signal difference between the bright state and the dark state can be achieved. Also, if a p-Si amplifier is used for the output amplifier, the output voltage becomes the saturation voltage at the time of read-out. This allows the p-Si amplifier to directly output the large difference detected by the a-Si diode as a large difference in the output voltage.

摘要翻译： 有机EL显示装置的显示面板包括：光检测部，其通过手指等触摸屏幕时检测反射光。 光检测部分包括接收反射光的光电二极管和输出与接收光量对应的输出电压的输出放大器。 如果对这种光电二极管使用a-Si二极管，则可以实现明亮状态和黑暗状态之间足够大的信号差。 另外，如果使用p-Si放大器作为输出放大器，则输出电压成为读出时的饱和电压。 这允许p-Si放大器直接输出由a-Si二极管检测的大的差异作为输出电压的大差异。