公开(公告)号：US20100148294A1

公开(公告)日：2010-06-17

申请号：US12712420

申请日：2010-02-25

申请人： Kyoko FUJII ,  Takahiro Nakano ,  Hikari Sano

发明人： Kyoko FUJII ,  Takahiro Nakano ,  Hikari Sano

IPC分类号： H01L31/0216

CPC分类号： H04N5/2253 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627

摘要： An optical device such as an image sensor alleviates reduction in image quality caused by light reaching a peripheral circuit section other than a light receiving section. A semiconductor substrate includes an interconnect layer, a light receiving section provided with a plurality of light receiving elements on the interconnect layer, and a peripheral circuit section provided in a same layer as the light receiving section, and surrounding the light receiving section. Light entry elements are provided on a surface of the semiconductor substrate. A light shielding film is formed of a metal layer, and covers at least one part of a region corresponding to the peripheral circuit section. A first electrode is formed in the region corresponding to the peripheral circuit section, and in an opening of the light shielding film to be electrically isolated from the light shielding film.

摘要翻译： 诸如图像传感器的光学装置减轻了到达光接收部分以外的外围电路部分的光的图像质量的降低。 半导体衬底包括互连层，在互连层上设置有多个光接收元件的光接收部分和设置在与光接收部分相同的层中并围绕光接收部分的外围电路部分。 光入射元件设置在半导体衬底的表面上。 遮光膜由金属层形成，并且覆盖对应于外围电路部分的区域的至少一部分。 第一电极形成在与外围电路部分对应的区域中，并且在遮光膜的开口中与遮光膜电隔离。

公开(公告)号：US20090211793A1

公开(公告)日：2009-08-27

申请号：US12330923

申请日：2008-12-09

申请人： Takahiro NAKANO ,  Masanori Minamio ,  Yoshihiro Tomita ,  Hikari Sano

发明人： Takahiro NAKANO ,  Masanori Minamio ,  Yoshihiro Tomita ,  Hikari Sano

IPC分类号： H05K1/18 ,  H05K3/02

CPC分类号： H01L27/14636 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14618 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/351 ,  H05K1/115 ,  H05K3/388 ,  H05K2201/09509 ,  Y10T29/49155 ,  H01L2924/00

摘要： In a substrate module of the present invention, a connection electrode is provided on a first surface of a substrate, and a first penetrating hole portion is running through the substrate in a thickness direction thereof so as to reach a reverse surface of the connection electrode, with a penetrating electrode being provided inside the first penetrating hole portion. The penetrating electrode defines a depression in a position opposing the reverse surface of the connection electrode, and an upper portion of the penetrating electrode is thicker than a side portion of the penetrating electrode. The penetrating electrode is present also on a second surface of the substrate, and is connected to a wiring electrode on the second surface.

摘要翻译： 在本发明的基板模块中，在基板的第一面上设置有连接电极，第一贯通孔部在其厚度方向上贯穿基板，从而到达连接电极的背面， 其中穿透电极设置在第一穿透孔部分的内部。 穿透电极在与连接电极的反面相对的位置形成凹部，并且穿透电极的上部比穿透电极的侧部更厚。 穿透电极也存在于基板的第二表面上，并且连接到第二表面上的布线电极。

公开(公告)号：US20090065933A1

公开(公告)日：2009-03-12

申请号：US12203982

申请日：2008-09-04

申请人： Hideki Takehara ,  Yoshihiro Tomita ,  Seiji Fujiwara ,  Takahiro Nakano ,  Hikari Sano

发明人： Hideki Takehara ,  Yoshihiro Tomita ,  Seiji Fujiwara ,  Takahiro Nakano ,  Hikari Sano

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05655 ,  H01L2224/0603 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13023 ,  H01L2224/13027 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/14104 ,  H01L2224/81143 ,  H01L2224/81208 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/207 ,  H01L2224/13099 ,  H01L2924/00012

摘要： The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.

摘要翻译： 本发明提供一种能够抑制在回流加热期间由凸块的高度变化引起的不良连接的半导体器件，可以应用于窄的阵列间距，并且可以自由地调节凸块的高度。