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    Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures
    32.
    发明授权
    Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures 有权
    形成通孔结构的方法和制造包含这种通孔结构的相变存储器件的方法

    公开(公告)号：US07473597B2

    公开(公告)日：2009-01-06

    申请号：US11201421

    申请日：2005-08-11

    Applicant: Jang-Eun Lee ,  Sung-Lae Cho ,  Jeong-Hee Park

    Inventor： Jang-Eun Lee ,  Sung-Lae Cho ,  Jeong-Hee Park

    IPC: H01L21/44

    CPC classification number: H01L21/76877 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

    Abstract: Provided are methods for forming conductive plug structures, such as via plugs, from a plurality of conductive layer patterns and methods of fabricating semiconductor devices, including semiconductor memory devices such as phase change semiconductor memory devices. An example method forms a small via structure by forming a conductive layer on a semiconductor substrate. A molding insulating layer is formed on the conductive layer and a via hole is formed through the insulating layer to expose a region of the conductive layer. A first via filling layer is formed and then partially removed to form a partial via plug. The formation and removal of the phase change material layer are then repeated as necessary to form a multilayer plug structure that substantially fills the via hole with the multilayer structure typically exhibiting reduced defects and damage than plug structures prepared by conventional methods.

    Abstract translation: 提供了用于从多个导电层图案形成诸如通孔插头的导电插塞结构的方法以及制造半导体器件的方法，包括诸如相变半导体存储器件的半导体存储器件。 示例性方法通过在半导体衬底上形成导电层来形成小通孔结构。 在导电层上形成模制绝缘层，并且通过绝缘层形成通孔以暴露导电层的区域。 形成第一通孔填充层，然后部分地移除以形成部分通孔塞。 然后根据需要重复形成和除去相变材料层以形成多层插塞结构，该多层插塞结构基本上填充通孔，其中多层结构通常表现出比通过常规方法制备的插塞结构减少的缺陷和损伤。

    Method of writing to MRAM devices
    36.
    发明授权
    Method of writing to MRAM devices 有权
    写入MRAM设备的方法

    公开(公告)号：US07218556B2

    公开(公告)日：2007-05-15

    申请号：US11097495

    申请日：2005-04-01

    Applicant: Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

    Inventor： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

    IPC: G11C11/00

    CPC classification number: G11C11/16

    Abstract: A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.

    Abstract translation: 提供了一种写入磁性随机存取存储器（MRAM）器件的方法。 该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。 此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。 读取MTJ的初始磁化状态并与期望的磁化状态进行比较。 当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个 ，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

    MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    37.
    发明申请
    MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    磁记忆体装置及其制造方法

    公开(公告)号：US20070041243A1

    公开(公告)日：2007-02-22

    申请号：US11465075

    申请日：2006-08-16

    Applicant: Jun-Soo BAE ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Kyung-Tae NAM

    Inventor： Jun-Soo BAE ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Kyung-Tae NAM

    IPC: G11C11/00

    CPC classification number: G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/08

    Abstract: There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.

    Abstract translation: 提供了一种磁存储器件及其形成方法。 磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。 在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。 在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。 在存储和无引导模式之间插入一个自由的反转模式。 自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

    MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING AN OXIDIZED BUFFER LAYER AND METHOD OF FABRICATING THE SAME
    38.
    发明申请
    MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING AN OXIDIZED BUFFER LAYER AND METHOD OF FABRICATING THE SAME 审中-公开
    具有氧化缓冲层的磁性隧道结结构及其制造方法

    公开(公告)号：US20070041125A1

    公开(公告)日：2007-02-22

    申请号：US11552085

    申请日：2006-10-23

    Applicant: Young-Ki HA ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Jun-Soo BAE ,  In-Gyu BAEK

    Inventor： Young-Ki HA ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Jun-Soo BAE ,  In-Gyu BAEK

    IPC: G11B5/17

    CPC classification number: H01L43/12 ,  H01L43/08

    Abstract: There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.

    Abstract translation: 提供了一种磁性隧道结结构及其制造方法。 磁性隧道结结构包括依次形成在下电极上的下电极，下磁层图案和隧道层图案。 磁隧道结结构还包括依次形成在隧道层图案的一部分上的上磁层图案，缓冲层图案和上电极。 上部磁性层图案的侧壁由氧化的上部磁性层包围，缓冲层图案的侧壁由氧化的缓冲层包围。 可以通过氧化缓冲层来防止磁性隧道结区域中上部磁性层图案和下部磁性层图案的消耗。

    Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same
    40.
    发明申请
    Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same 有权
    具有氧化缓冲层的磁隧道结结构及其制造方法

    公开(公告)号：US20050035386A1

    公开(公告)日：2005-02-17

    申请号：US10915872

    申请日：2004-08-10

    Applicant: Young-Ki Ha ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Se-Chung Oh ,  Jun-Soo Bae ,  In-Gyu Baek

    Inventor： Young-Ki Ha ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Se-Chung Oh ,  Jun-Soo Bae ,  In-Gyu Baek

    IPC: G11C11/15 ,  H01L21/00 ,  H01L43/08 ,  H01L43/12

    CPC classification number: H01L43/12 ,  H01L43/08

    Abstract: There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.

    Abstract translation: 提供了一种磁性隧道结结构及其制造方法。 磁性隧道结结构包括依次形成在下电极上的下电极，下磁层图案和隧道层图案。 磁隧道结结构还包括依次形成在隧道层图案的一部分上的上磁层图案，缓冲层图案和上电极。 上部磁性层图案的侧壁由氧化的上部磁性层包围，缓冲层图案的侧壁由氧化的缓冲层包围。 可以通过氧化缓冲层来防止磁性隧道结区域中上部磁性层图案和下部磁性层图案的消耗。

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