利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.019 秒)

    PHYSICAL VAPOR DEPOSITION CHAMBER WITH CAPACITIVE TUNING AT WAFER SUPPORT
    32.
    发明申请
    PHYSICAL VAPOR DEPOSITION CHAMBER WITH CAPACITIVE TUNING AT WAFER SUPPORT 有权
    具有电容调谐功能的物理蒸气沉积室

    公开(公告)号：US20130008778A1

    公开(公告)日：2013-01-10

    申请号：US13614704

    申请日：2012-09-13

    申请人： DANIEL J. HOFFMAN ,  KARL M. BROWN ,  YING RUI ,  JOHN PIPITONE

    发明人： DANIEL J. HOFFMAN ,  KARL M. BROWN ,  YING RUI ,  JOHN PIPITONE

    IPC分类号： C23C14/54 ,  C23C14/50 ,  C23C14/14 ,  C23C14/34

    CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

    摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

    摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

    Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
    34.
    发明授权
    Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
    用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率

    公开(公告)号：US07820020B2

    公开(公告)日：2010-10-26

    申请号：US11140513

    申请日：2005-05-25

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.

    摘要翻译： 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流 目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向 晶片支撑座的表面。

    SHUTTER DISK FOR PHYSICAL VAPOR DEPOSITION CHAMBER
    35.
    发明申请
    SHUTTER DISK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 审中-公开
    用于物理蒸气沉积室的快门盘

    公开(公告)号：US20100089315A1

    公开(公告)日：2010-04-15

    申请号：US12563531

    申请日：2009-09-21

    申请人： Karl M. Brown ,  Jason Schaller

    发明人： Karl M. Brown ,  Jason Schaller

    IPC分类号： B05C11/00

    CPC分类号： H01L21/68785 ,  C23C14/50 ,  H01J37/32477 ,  H01L21/67069 ,  H01L21/6719 ,  H01L21/68707

    摘要： A shutter disk suitable for shield a substrate support in a physical vapor deposition chamber is provided. In one embodiment, the shutter disk includes a disk-shaped body having an outer diameter disposed between a top surface and a bottom surface. The disk-shape body includes a double step connecting the bottom surface to the outer diameter.

    摘要翻译： 提供了适用于在物理气相沉积室中屏蔽衬底支架的快门盘。 在一个实施例中，快门盘包括具有设置在顶表面和底表面之间的外径的盘形主体。 盘状体包括将底面与外径连接的双重步骤。

    PROCESS FOR REMOVING HIGH STRESSED FILM USING LF OR HF BIAS POWER AND CAPACITIVELY COUPLED VHF SOURCE POWER WITH ENHANCED RESIDUE CAPTURE
    37.
    发明申请
    PROCESS FOR REMOVING HIGH STRESSED FILM USING LF OR HF BIAS POWER AND CAPACITIVELY COUPLED VHF SOURCE POWER WITH ENHANCED RESIDUE CAPTURE 有权
    使用低频或高频偏置功率移除高压薄膜的过程和具有增强残留捕获能力的电容耦合甚高频源

    公开(公告)号：US20080014747A1

    公开(公告)日：2008-01-17

    申请号：US11626151

    申请日：2007-01-23

    申请人： KARL M. BROWN ,  JOHN A. PIPITONE ,  VINEET H. MEHTA

    发明人： KARL M. BROWN ,  JOHN A. PIPITONE ,  VINEET H. MEHTA

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02063 ,  H01J37/32091 ,  H01J37/32706 ,  H01J2237/20

    摘要： A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a reentrant surface profile, and installing the metal lid as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling. Conductive vias are formed in a dielectric layer of the semiconductor wafer, which are then covered with an overlying dielectric layer. High aspect ratio openings are etched through the overlying dielectric layer to the conductive via to expose a face of the conductive via. This step is followed by a preclean step for removing residue from the exposed face of each conductive via while capturing at least a portion of the residue on the roughened interior surface of the lid. This preclean step consists of: (1) placing the wafer on the wafer pedestal of the plasma clean reactor chamber and introducing an inert gas into the preclean reactor chamber; (2) coupling VHF plasma source power of 60 MHz or greater to the wafer pedestal with sufficient power to establish an etch rate on the order of 200-500 Å/min; and (3) coupling LF or HF plasma bias power of 13.56 MHz or less with sufficient power to realize the etch rate at the bottom surfaces of the high aspect ratio openings, and removing the wafer from the plasma clean reactor chamber.

    摘要翻译： 在半导体晶片上制造多层互连结构的方法首先通过将金属盖的内表面粗糙化为超过SA 2000的表面粗糙度而具有折入表面轮廓，并且将金属盖安装为等离子体清洁反应器室的顶部 具有面向天花板内表面的晶片基座。 导电通孔形成在半导体晶片的电介质层中，然后用覆盖的介电层覆盖。 通过上覆电介质层将高纵横比开口蚀刻到导电通孔，以露出导电通孔的表面。 该步骤之后是用于从每个导电通孔的暴露面去除残留物的预清洗步骤，同时捕获盖的粗糙化内表面上的至少一部分残余物。 该预清洗步骤包括：（1）将晶片放置在等离子体清洁反应器室的晶片基座上，并将惰性气体引入预清洗反应器室中; （2）以足够的功率将60MHz或更高的VHF等离子体源功率耦合到晶片基座，以建立约200-500埃/分钟的蚀刻速率; 和（3）以13.56MHz或更小的LF或HF等离子体偏置功率与足够的功率耦合以实现高纵横比开口的底表面处的蚀刻速率，以及从等离子体清洁反应器室中移除晶片。

    Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
    38.
    发明授权
    Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
    用于通过工件施加的源极和偏置功率频率的金属等离子体气相沉积和再溅射的装置和方法

    公开(公告)号：US07268076B2

    公开(公告)日：2007-09-11

    申请号：US11052012

    申请日：2005-02-03

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2855 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32706 ,  H01J37/3408 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865

    摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

    摘要翻译： 在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。 将工艺气体引入所述真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

    Wire wound ignition cable and method for making same
    39.
    发明授权
    Wire wound ignition cable and method for making same 失效
    绕线点火电缆及其制作方法

    公开(公告)号：US5059938A

    公开(公告)日：1991-10-22

    申请号：US509145

    申请日：1990-04-16

    申请人： Karl M. Brown

    发明人： Karl M. Brown

    IPC分类号： F02P15/00 ,  H01B7/00 ,  H01B7/17 ,  H01B13/00

    CPC分类号： H01B7/0063

    摘要： An ignition cable having a resistance wire helically wound around a strength member to form a conductive core. A very thin adhesive layer is applied over the conductive core and is overlaid with a semi-conductive layer of a cross-linked thermosetting material. The cross-linked thermosetting material is extruded over the adhesive layer to form a smooth surface. A layer of insulating material and a protective jacket are applied over the insulating layer. A braid may be added intermediate the insulating layer and the jacket to increase the mechanical strength of the ignition cable.

    摘要翻译： 一种点火电缆，其具有围绕强度构件螺旋缠绕以形成导电芯的电阻丝。 将非常薄的粘合剂层施加在导电芯上，并且覆盖有交联的热固性材料的半导体层。 将交联的热固性材料挤出粘合剂层以形成光滑的表面。 在绝缘层上施加绝缘材料层和保护套。 可以在绝缘层和护套之间添加编织物以增加点火电缆的机械强度。