公开(公告)号：US06281534B1

公开(公告)日：2001-08-28

申请号：US09170417

申请日：1998-10-13

Applicant: Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

Inventor： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC: H01L2976

CPC classification number: H01L21/31691 ,  H01L27/10852

Abstract: A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.

Abstract translation: 用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。 当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。 含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

公开(公告)号：US06169304A

公开(公告)日：2001-01-02

申请号：US09071534

申请日：1998-05-04

Applicant: Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

Inventor： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC: H01L2976

CPC classification number: H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

Abstract: A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

Abstract translation: 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US5780351A

公开(公告)日：1998-07-14

申请号：US844108

申请日：1997-04-28

Applicant: Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

Inventor： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC: H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/20 ,  H01L21/00

CPC classification number: H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

Abstract: A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

Abstract translation: 一种半导体器件，其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US5528038A

公开(公告)日：1996-06-18

申请号：US232857

申请日：1994-04-22

Applicant: Nobuyuki Yoshiike ,  Koji Arita ,  Susumu Kobayashi

Inventor： Nobuyuki Yoshiike ,  Koji Arita ,  Susumu Kobayashi

IPC: G01J5/34 ,  G01J5/00

CPC classification number: G01J5/34

Abstract: A temperature distribution measurement apparatus has an infrared array sensor that includes a pyroelectric substrate with infrared array receiving electrodes and electrodes for compensation formed on its front side and opposing electrodes formed on its backside. Also included is an infrared lens to focus incident infrared lights on the array sensor, a chopper to cut off the incident infrared rays intermittently and a rotating part carrying and rotating parts of the apparatus. The detector elements of the infrared array sensor are laid out vertically and parallel with one another. A horizontal temperature distribution is measured by a lateral scanning with the rotating part rotating horizontally while a vertical temperature distribution is measured by driving the chopper in front of the infrared sensor. Thus, a two dimensional temperature distribution of an empty space is measured. The number and the position of persons in the empty space attained from the temperature distribution measurement data is useful for controlling air conditioners.

Abstract translation: 温度分布测量装置具有红外线阵列传感器，其包括具有红外阵列接收电极的热电基片和在其前侧形成的用于补偿的电极，以及形成在其背面的相对电极。 还包括红外透镜，用于将入射的红外光聚焦在阵列传感器上，切断器间歇地切断入射的红外线，以及旋转部件承载和旋转设备的部分。 红外阵列传感器的检测器元件彼此垂直布置并平行。 通过横向扫描测量水平温度分布，旋转部分水平旋转，同时通过驱动红外线传感器前方的斩波器来测量垂直温度分布。 因此，测量空间的二维温度分布。 从温度分布测量数据获得的空间中的人员的数量和位置对于控制空调是有用的。

公开(公告)号：US5370811A

公开(公告)日：1994-12-06

申请号：US832649

申请日：1992-02-11

Applicant: Yuji Yoshida ,  Koji Arita ,  Masami Funakura

Inventor： Yuji Yoshida ,  Koji Arita ,  Masami Funakura

IPC: C09K5/04

CPC classification number: C09K5/045 ,  C09K2205/22

Abstract: A working fluid comprising tetrafluoroethane and at least two fluorinated hydrocarbons having a boiling point of not higher than -40.degree. C. under atmospheric pressure selected from the group consisting of methane derivatives and ethane derivatives which consist of one or two carbon atoms, hydrogen atoms and fluorine atoms, which has very small influence on the ozone layer in the stratosphere and is suitable as a substitute working fluid for chlorodifluoromethane.

Abstract translation: 一种包含四氟乙烷和至少两种沸点不高于-40℃的氟化烃的工作流体，在大气压下选自甲烷衍生物和由一个或两个碳原子组成的乙烷衍生物，氢原子和 氟原子对平流层臭氧层的影响非常小，适用于氯二氟甲烷的替代工作流体。

公开(公告)号：US5059338A

公开(公告)日：1991-10-22

申请号：US618962

申请日：1990-11-28

Applicant: Yuji Yoshida ,  Koji Arita ,  Takeshi Tomizawa

Inventor： Yuji Yoshida ,  Koji Arita ,  Takeshi Tomizawa

IPC: C09K5/04

CPC classification number: C09K5/045 ,  C09K2205/122

Abstract: A working fluid comprising trifluoromethane, chlorodifluoromethane and at least one halogenated ethane which consists of two carbon atoms, 1 or 2 hydrogen atoms, 0 to 2 chlorine atoms and balance of fluorine atoms and has a boiling point of not lower than -30.degree. C. under atmospheric pressure, which has very small influence on the ozone layer in the stratosphere and is suitable as a substitute working fluid for dichlorodifluoromethane.

公开(公告)号：US08482958B2

公开(公告)日：2013-07-09

申请号：US13321018

申请日：2011-03-10

Applicant: Yukio Hayakawa ,  Koji Arita ,  Takumi Mikawa ,  Takeki Ninomiya

Inventor： Yukio Hayakawa ,  Koji Arita ,  Takumi Mikawa ,  Takeki Ninomiya

IPC: G11C11/00

CPC classification number: H01L27/2409 ,  H01L45/146

Abstract: Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode (32), a second electrode (31), and a current steering layer (33). The current steering layer (33) comprises SiNx (where 0

Abstract translation: 提供了即使当施加具有不同极性的电脉冲并且可能导致大电流流过可变电阻元件时也能够防止写入干扰的电流导向元件。 当前的转向元件包括第一电极（32），第二电极（31）和电流转向层（33）。 当前的转向层（33）包括加入氢或氟的SiNx（其中0 <0.85）。 当D（D = D0×1022原子/ cm3）表示氢或氟的密度时，d（nm）表示电流导向层（33）的厚度，V0（V）表示适用于第一 电极（32）和第二电极（31）D，x，d和V0满足下式。 （ln（1000（C·exp（α·d）exp（β·x））-1）γ）2 @ V0 ）γ）2-（ln（10000（C·exp（α·d）exp（β·x））-1）γ）2/2> = 0其中C = k1×D0k2，α，β， k1和k2是常数。

公开(公告)号：US08355274B2

公开(公告)日：2013-01-15

申请号：US13061312

申请日：2009-09-17

Applicant: Koji Arita ,  Takumi Mikawa ,  Mitsuteru IIjima ,  Kenji Tominaga

Inventor： Koji Arita ,  Takumi Mikawa ,  Mitsuteru IIjima ,  Kenji Tominaga

IPC: G11C11/00

CPC classification number: H01L27/101 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2213/15 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: A current steering element which can prevent occurrence of write disturb even when electric pulses having different polarities are applied and can cause large current to flow through a variable resistance element, and with which data can be written without problem. In a storage element (3) including: a variable resistance element (1) whose electric resistance value changes in response to application of electric pulses having a positive polarity and a negative polarity and which maintains the changed electric resistance value; and the current steering element (2) that steers current flowing through the variable resistance element (1) when the electric pulses are applied, the current steering element (2) includes: a first electrode (32); a second electrode (31); and a current steering layer (33) interposed between the first electrode (32) and the second electrode (31). When the current steering layer (33) includes SiNx (0

Abstract translation: 即使施加具有不同极性的电脉冲也能够防止写入干扰的发生，并且可能导致大的电流流过可变电阻元件并且可以无限制地写入数据的电流导向元件。 在一种存储元件（3）中，包括：可变电阻元件（1），其电阻值响应于具有正极性和负极性的电脉冲的应用而变化并且保持改变的电阻值; 以及当施加电脉冲时转向流过可变电阻元件（1）的电流的当前操舵元件（2），所述电流操舵元件（2）包括：第一电极（32）; 第二电极（31）; 和介于所述第一电极（32）和所述第二电极（31）之间的电流转向层（33）。 当电流导向层（33）包括SiNx（0

公开(公告)号：US08295123B2

公开(公告)日：2012-10-23

申请号：US12669174

申请日：2008-07-11

Applicant: Takeshi Takagi ,  Takumi Mikawa ,  Koji Arita ,  Mitsuteru Iijima ,  Takashi Okada

Inventor： Takeshi Takagi ,  Takumi Mikawa ,  Koji Arita ,  Mitsuteru Iijima ,  Takashi Okada

IPC: G11C13/00

CPC classification number: H01L27/101 ,  H01L27/1021 ,  H01L27/24 ,  H01L45/00

Abstract: In a current rectifying element (10), a barrier height φA of a center region (14) of a barrier layer (11) in a thickness direction thereof sandwiched between a first electrode layer (12) and a second electrode layer (13) is formed to be larger than a barrier height φB of a region in the vicinity of an interface (17) between the barrier layer (11) and the first electrode layer (12) and an interface (17) between the barrier layer (11) and the second electrode layer (13). The barrier layer (11) has, for example, a triple-layer structure of barrier layers (11a), (11b) and (11c). The barrier layers (11a), (11b) and (11c) are, for example, formed by SiN layers of SiNx2, SiNx1, and SiNx1 (X1

Abstract translation: 在电流整流元件（10）中，阻挡层（11）在其厚度方向上的中心区域（14）的阻挡高度＆amp; A被夹在第一电极层（12）和第二电极层（13）之间 ）形成为大于阻挡层（11）和第一电极层（12）之间的界面（17）附近的区域和阻挡层（17）之间的界面（17）的势垒高度B （11）和第二电极层（13）。 阻挡层（11）具有例如阻挡层（11a），（11b）和（11c）的三层结构。 阻挡层（11a），（11b）和（11c）例如由SiNx2，SiNx1和SiNx1（X1

公开(公告)号：US20120256156A1

公开(公告)日：2012-10-11

申请号：US13515592

申请日：2010-11-17

Applicant: Koji Arita ,  Takumi Mikawa

Inventor： Koji Arita ,  Takumi Mikawa

IPC: H01L47/00 ,  H01L21/02

CPC classification number: G11C13/0007 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

Abstract: Disclosed is a memory device provided with a plurality of memory cells and a lead-out line (12) shared among the memory cells. Each memory cell is provided with a transistor (6) formed above a substrate (1) and a variable resistance element (10) having a lower electrode (7), an upper electrode (9) that comprises a noble metal, and a variable resistance layer (8) disposed between the lower electrode (7) and the upper electrode (9). The resistance value of the variable resistance layer (8) changes reversibly in response to electric pulses that go through the transistor (6) and are applied between the lower electrode (7) and the upper electrode (9). The lead-out line (12) is in direct contact with the upper electrodes (9) of the memory cells.

Abstract translation: 公开了一种设置有多个存储单元和在存储单元之间共享的引出线（12）的存储器件。 每个存储单元设置有形成在基板（1）上方的晶体管（6）和具有下电极（7）的可变电阻元件（10），包含贵金属的上电极（9）和可变电阻 层（8）设置在下电极（7）和上电极（9）之间。 可变电阻层（8）的电阻值响应于通过晶体管（6）的电脉冲而可逆地改变并施加在下电极（7）和上电极（9）之间。 引出线（12）与存储单元的上电极（9）直接接触。