公开(公告)号：US07553685B2

公开(公告)日：2009-06-30

申请号：US10523636

申请日：2003-08-06

申请人： Nobuhiko Noto ,  Masato Yamada ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

发明人： Nobuhiko Noto ,  Masato Yamada ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/30

摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.

摘要翻译： 发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以与ITO透明电极层8,10接触。 ITO透明电极层。 接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。 这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使 接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

公开(公告)号：US07145180B2

公开(公告)日：2006-12-05

申请号：US10627892

申请日：2003-07-28

申请人： Masayuki Shinohara ,  Masato Yamada

发明人： Masayuki Shinohara ,  Masato Yamada

IPC分类号： H01L31/12

CPC分类号： H01L21/02381 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0062

摘要： In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion 24 is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer 7, on such light emitting layer portion 24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.

摘要翻译： 在制造发光器件中，分别由III-V族化合物半导体构成的发光层部分24和电流扩展层7堆叠在单晶衬底上。 通过金属有机气相外延工艺形成发光层部分24，并且在该发光层部分24上形成电流扩散层7，使其具有通过氢化物气相外延的n型导电型 处理。

公开(公告)号：US06777257B2

公开(公告)日：2004-08-17

申请号：US10436440

申请日：2003-05-13

申请人： Masayuki Shinohara ,  Masato Yamada

发明人： Masayuki Shinohara ,  Masato Yamada

IPC分类号： H01L2100

CPC分类号： H01L33/145 ,  H01L33/025

摘要： In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer. A current blocking layer which comprises a Group III-V compound semiconductor having a conductivity type different from that of the current spreading layer is formed in the midway in the thickness-wise direction of the current spreading layer as being buried therein At least a portion of the current spreading layer covering the current blocking layer on the electrode side is formed by the hydride vapor-phase epitaxy process (the second vapor-phase growth step). The current spreading layer is composed of GaAs1-aPa (0.5≦a≦0.9). An off-angled substrate is available as the single crystal substrate.

摘要翻译： 在具有形成在单晶衬底上的分别由III-V族化合物半导体构成的发光层部分和电流扩散层的发光器件中，在单晶衬底上形成发光层部分 金属有机气相外延工艺，并且在这种发光层部分上，通过氢化物气相外延工艺形成电流扩散层。 在包括电流扩展层的电极形成侧的主表面的表面区域也形成高浓度掺杂层，以使p型掺杂剂的载流子浓度高于电流剩余部分的载流子浓度 铺展层 在电流扩散层的厚度方向的中途形成埋入其中的具有导电类型不同于电流扩散层的III-V族化合物半导体的电流阻挡层。至少一部分 通过氢化物气相外延法（第二气相生长工序）形成覆盖电极侧的电流阻挡层的电流扩散层。 电流扩散层由GaAs1-aPa（0.5 <= a <= 0.9）组成。 偏斜基板可用作单晶基板。

公开(公告)号：US5985023A

公开(公告)日：1999-11-16

申请号：US620158

申请日：1996-03-22

申请人： Susumu Higuchi ,  Masato Yamada ,  Munehisa Yanagisawa

发明人： Susumu Higuchi ,  Masato Yamada ,  Munehisa Yanagisawa

IPC分类号： C30B19/10 ,  C30B29/44 ,  H01L21/208 ,  H01L33/30

CPC分类号： H01L33/025 ,  H01L21/02392 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/0257 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/0062

摘要： While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.

摘要翻译： 作为发光二极管材料的外延晶片中的氮掺杂的磷化镓外延层希望具有高浓度的氮以提高发光效率，本发明提供了一种可靠和有效的方法， 通过在掺杂气氛中作为氮源的氨的浓度的增加来实现高氮浓度，这与普遍认识到氨浓度超过极限的增加相反，具有降低氮掺杂浓度的作用 外延层。 本发明的方法是基于这样的发现，即在外延层的生长速率和由此生长的外延层中的氮浓度之间保持指数关系。

公开(公告)号：US5808324A

公开(公告)日：1998-09-15

申请号：US527611

申请日：1995-09-13

申请人： Masato Yamada ,  Makoto Kawasaki

发明人： Masato Yamada ,  Makoto Kawasaki

IPC分类号： H01L33/30 ,  H01L33/00

CPC分类号： H01L33/305 ,  H01L33/0025

摘要： A light emitting device with higher luminance than that of a conventional light emitting device is provided. According to the present invention, a light emitting device comprises owing three layers of: a first cladding layer made of a p-type mixed crystal compound semiconductor; a p-type active layer made of a p-type mixed crystal compound semiconductor which has the mixed crystal ratio required to emit the light having a predetermined wavelength; and a second cladding layer made of a mixed crystal compound semiconductor, the conductivity type of which is n throughout the second cladding layer or except the region in the vicinity of the heterojunction with the p-type active layer, wherein the p-type active layer is sandwiched by the first cladding layer and the second cladding layer, and forms the double hetrojunction structure with said both cladding layers, and is characterized in that: the second cladding layer is doped with an n-type impurity or impurities and a p-type impurity or impurities; the total concentration of a p-type impurity or impurities in the second cladding layer is in the range of 1.times.10.sup.17 cm.sup.-3 and more; and a pn junction is formed in the second cladding layer of a position within 1 .mu.m from the heterojunction with the p-type active layer.

摘要翻译： 提供了一种比传统发光器件具有更高亮度的发光器件。 根据本发明，发光器件包括三层：由p型混晶化合物半导体制成的第一覆层; 由具有发射具有预定波长的光所需的混晶比的p型混晶化合物半导体制成的p型有源层; 以及第二包覆层，其由导电类型在整个第二包覆层中的n或除了与p型有源层的异质结附近的区域之外的混合晶体化合物半导体，其中p型有源层 夹在第一包层和第二包层之间，并与所述两个包层形成双重结构结构，其特征在于：第二包层掺杂有n型杂质或杂质，p型 杂质或杂质; 第二包覆层中p型杂质或杂质的总浓度在1×10 17 cm -3以上的范围内; 并且在与p型有源层的异质结1μm的位置的第二覆层中形成pn结。

公开(公告)号：US4783772A

公开(公告)日：1988-11-08

申请号：US165361

申请日：1988-02-29

申请人： Toshio Umemoto ,  Toshio Hiruta ,  Hideo Uehara ,  Masato Yamada ,  Kunikazu Mochida

发明人： Toshio Umemoto ,  Toshio Hiruta ,  Hideo Uehara ,  Masato Yamada ,  Kunikazu Mochida

IPC分类号： B63C11/02 ,  G01C5/06 ,  G01C13/00 ,  G04B47/06 ,  G04G21/02 ,  G01L9/00

CPC分类号： G04G21/02 ,  B63C11/02 ,  G01C5/06 ,  G04B47/06

摘要： An electronic diving wristwatch having a pressure sensing depth meter provided in a projection on a case of the watch without interferring with the existing crown, pushbuttons, etc. The depth meter has a piezoelectric type sensing element which produces electrical output in response to the water pressure. The output is converted to a water depth which is displayed in a digital display window of the watch.

摘要翻译： 一种具有压力感测深度计的电子潜水手表，其设置在手表的壳体上的突起中，而不会干扰现有的表冠，按钮等。深度计具有压电型感测元件，其响应于水压产生电输出 。 输出被转换为显示在手表的数字显示窗口中的水深。

公开(公告)号：US4504326A

公开(公告)日：1985-03-12

申请号：US539678

申请日：1983-10-06

申请人： Yoshikuni Tokunaga ,  Masato Yamada

发明人： Yoshikuni Tokunaga ,  Masato Yamada

IPC分类号： C21D8/04 ,  C22C38/12 ,  C23C2/06

CPC分类号： C22C38/12 ,  C21D8/0426 ,  C23C2/06 ,  C21D8/0436 ,  C21D8/0473 ,  C21D8/0478

摘要： Method for the production of a cold rolled steel sheet which has a distinguished deep drawability as well as chemical treating ability by the steps of providing a very low carbon steel, adding Ti and Nb in combination to said steel, hot rolling and cold rolling said steel to produce a cold rolled steel sheet, and subjecting said cold rolled steel sheet to a continuous anneal at a temperature of more than 700.degree. C. to less than the Ac.sub.3 transformation point.

摘要翻译： 通过提供非常低碳钢的步骤，具有显着的深冲性和化学处理能力的冷轧钢板的生产方法，将Ti和Nb组合加入到所述钢中，热轧和冷轧所述钢 制造冷轧钢板，并将该冷轧钢板在大于700℃至小于Ac 3相变点的温度下进行连续退火。

公开(公告)号：US09127629B2

公开(公告)日：2015-09-08

申请号：US13318527

申请日：2011-03-31

申请人： Masato Yamada ,  Yoichi Kobane ,  Naofumi Adachi ,  Tsukasa Yamashita

发明人： Masato Yamada ,  Yoichi Kobane ,  Naofumi Adachi ,  Tsukasa Yamashita

IPC分类号： F02M61/10 ,  F02M61/00 ,  F02M47/02 ,  F02M61/16

CPC分类号： F02M47/027 ,  F02M47/025 ,  F02M61/161 ,  F02M2547/008

摘要： A fuel injection device (100) includes a control body (40) provided with an injection hole (44), a nozzle needle (60) that opens or closes the injection hole (44), a pressure control chamber (53) controlling a movement of the nozzle needle (60), an inflow channel (52) through which high-pressure fuel is introduced to the pressure control chamber (53), an outflow channel (54) through which the fuel from the pressure control chamber (53) is discharged, and a floating plate (70) that opens or closes the inflow channel (52). In the fuel injection device (100), the control body (40) includes a cylinder (56) defining the pressure control chamber (53) in a radial direction thereof, and an inner wall portion (56a) of the cylinder (56) includes a communication groove (57a) which causes an inflow chamber (53a) that is provided within the pressure control chamber (53) at a side of the inflow channel (52) relative to the floating plate (70), to communicate with a back pressure chamber (53b) that is provided within the pressure control chamber (53) at a side of the nozzle needle (60) relative to the floating plate (70).

摘要翻译： 燃料喷射装置（100）包括设置有喷射孔（44）的控制体（40），打开或关闭喷射孔（44）的喷嘴针（60），控制运动的压力控制室 所述喷嘴针（60）的流入通道（52），将高压燃料引入所述压力控制室（53）的流入通道（52），来自所述压力控制室（53）的燃料通过所述流出通道 以及打开或关闭流入通道（52）的浮板（70）。 在燃料喷射装置（100）中，控制体（40）包括在径向上限定压力控制室（53）的气缸（56），气缸（56）的内壁部（56a） 连通槽（57a），其使得在所述压力控制室（53）内设置在所述流入通道（52）的相对于所述浮板（70）的一侧的流入室（53a）与背压 在所述压力控制室（53）内设置在所述喷嘴针（60）的相对于所述浮板（70）的一侧的室（53b）。

公开(公告)号：US08991581B2

公开(公告)日：2015-03-31

申请号：US13641827

申请日：2011-04-20

申请人： Masato Yamada ,  Hiroki Sugawara

发明人： Masato Yamada ,  Hiroki Sugawara

IPC分类号： F16D35/02

CPC分类号： F16D35/024 ,  F16D35/021

摘要： Provided is a highly reactive fluid fan coupling device utilizing the non-Newtonian fluid characteristics of oil, thereby obtaining an excellent reaction rate of fan rotation using a control signal. In the fan coupling device, where the interior of a sealed housing supported on a rotary shaft with a drive disk secured thereto is partitioned in an oil reservoir chamber and a torque transmission chamber placing the drive disk thereinto by a partition plate; drive torque is transmitted to a driven side by oil supplied to the torque transmission chamber; and opening and closing of a flow path of oil is controlled by a valve member actuated by an electromagnet, wherein a mechanism to scrape out the oil in the oil reservoir chamber utilizing the non-Newtonian fluid characteristics of oil is provided on the drive disk so as to be opposed to an oil supply adjusting hole of the partition plate.

摘要翻译： 提供了利用非牛顿流体特性的油的高反应性流体风扇联接装置，从而使用控制信号获得优异的风扇旋转速率。 在风扇联接装置中，支撑在具有固定在其上的驱动盘的旋转轴上的密封壳体的内部被分隔在储油室中，并且转矩传递室通过分隔板将驱动盘放置在其中; 驱动扭矩通过供给到转矩传递室的油传递到从动侧; 并且通过由电磁体驱动的阀构件控制油的流路的打开和关闭，其中利用非牛顿流体特性的油刮除储油室中的油的机构设置在驱动盘上 与隔板的供油调整孔相对。

公开(公告)号：US08537448B2

公开(公告)日：2013-09-17

申请号：US13334745

申请日：2011-12-22

申请人： Masato Yamada

发明人： Masato Yamada

IPC分类号： G02B26/08

CPC分类号： G02B26/085 ,  G02B26/101

摘要： A mirror actuator has a first pivot portion which is pivotally supported on a base member, and a second pivot portion which is pivotally supported on the first pivot portion. A mirror is disposed in the second pivot portion. A first coil is disposed in the first pivot portion, and a second coil is disposed in the second pivot portion. A first elastic member connects between the base member and the first pivot portion. A second elastic member connects between the first pivot portion and the second pivot portion. The first elastic member and the second elastic member are connected by a circuit pattern. With the provision of the first elastic member, the second elastic member and the circuit pattern, a current is supplied to the first coil and to the second coil.

摘要翻译： 反光镜致动器具有枢转地支撑在基部构件上的第一枢转部分和枢转地支撑在第一枢转部分上的第二枢转部分。 镜子设置在第二枢转部分中。 第一线圈设置在第一枢转部分中，第二线圈设置在第二枢转部分中。 第一弹性构件连接在基部构件和第一枢转部分之间。 第二弹性构件连接在第一枢转部分和第二枢转部分之间。 第一弹性构件和第二弹性构件通过电路图案连接。 通过设置第一弹性构件，第二弹性构件和电路图案，电流被提供给第一线圈和第二线圈。