中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

76 records (took 0.014 seconds)

    COMPOUND MAGNETIC NANOWIRES FOR TCO REPLACEMENT
    32.
    发明申请
    COMPOUND MAGNETIC NANOWIRES FOR TCO REPLACEMENT 审中-公开
    用于替代TCO的复合磁性纳米颗粒

    公开(公告)号：US20100101832A1

    公开(公告)日：2010-04-29

    申请号：US12553300

    申请日：2009-09-03

    Applicant: Steven VERHAVERBEKE ,  Omkaram Nalamasu ,  Victor L. Pushparaj ,  Roman Gouk

    Inventor： Steven VERHAVERBEKE ,  Omkaram Nalamasu ,  Victor L. Pushparaj ,  Roman Gouk

    IPC: H01B5/00 ,  B05B5/12

    CPC classification number: H01J9/02 ,  B82Y25/00 ,  H01B1/02 ,  H01B1/04 ,  H01B1/08 ,  H01F1/0054 ,  H01F1/0081 ,  H01F1/445 ,  H01J2217/49207 ,  H01L51/5206 ,  Y10T29/49206

    Abstract: This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of compound magnetic nanowires in a plane, the compound nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the compound nanowires in the plane of the layer, the compound nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of compound magnetic nanowires allows for substantial optical transparency of the conductive layer. A compound magnetic nanowire may comprise a silver nanowire covered by a layer of magnetic metal such as nickel or cobalt. Furthermore, a compound magnetic nanowire may comprise a carbon nanotubes (CNT) attached to a magnetic metal nanowire. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of compound magnetic conductive nanowires on the substrate and applying a magnetic field to form the compound nanowires into a plurality of conductive pathways parallel to the surface of the substrate.

    Abstract translation: 本发明提供了具有低电薄片电阻和良好的光学透明度的理想组合的光学透明导电层。 导电层在平面中包含多个复合磁性纳米线，复合纳米线大致（1）彼此平行排列，（2）与层的平面中的化合物纳米线的长轴相比，化合物纳米线进一步 被配置为提供多个连续导电路径，并且其中多个复合磁性纳米线的密度允许导电层的实质的光学透明度。 复合磁性纳米线可以包括由诸如镍或钴的磁性金属层覆盖的银纳米线。 此外，复合磁性纳米线可以包括附着在磁性金属纳米线上的碳纳米管（CNT）。 在衬底上形成导电层的方法包括：在衬底上沉积多个复合导电纳米线并施加磁场以将复合纳米线形成平行于衬底表面的多个导电通路。

    MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION
    33.
    发明申请
    MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION 审中-公开
    使用等离子体植入的磁畴图案

    公开(公告)号：US20090199768A1

    公开(公告)日：2009-08-13

    申请号：US12029601

    申请日：2008-02-12

    Applicant: Steven Verhaverbeke ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Mahalingam Venkatesan

    Inventor： Steven Verhaverbeke ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Mahalingam Venkatesan

    IPC: B44C1/22 ,  C23C16/00

    CPC classification number: G11B5/855 ,  H01F41/34

    Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.

    Abstract translation: 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。

    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
    36.
    发明授权
    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material 失效
    能量敏感抗蚀剂材料和使用能量敏感抗蚀剂材料的器件制造方法

    公开(公告)号：US5879857A

    公开(公告)日：1999-03-09

    申请号：US813732

    申请日：1997-03-07

    Applicant: Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

    Inventor： Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

    IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00 ,  G03C1/492

    CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/111

    Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The condensation product has at least two polycylic moieties. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

    Abstract translation: 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料包含与溶解抑制剂和光酸产生剂（PAG）组合的聚合物。 溶解抑制剂是饱和多环烃化合物与至少一种羟基（OH）取代基和双官能饱和直链，支链或环状烃化合物的缩合反应产物，其中官能团是羧酸或羧酰氯基团。 缩合产物具有至少两个多环部分。 聚合物任选地具有垂饰的酸不稳定基团，其显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

    Resist materials
    37.
    发明授权
    Resist materials 失效
    抵抗材料

    公开(公告)号：US5830619A

    公开(公告)日：1998-11-03

    申请号：US777008

    申请日：1997-01-07

    Applicant: Evelyn Chin ,  Francis Michael Houlihan ,  Omkaram Nalamasu

    Inventor： Evelyn Chin ,  Francis Michael Houlihan ,  Omkaram Nalamasu

    IPC: C07C309/67 ,  C07C309/69 ,  C07C309/70 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

    CPC classification number: G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

    Abstract: Photoacid generators advantageous for use in applications such as photoacid generators used in chemically amplified resists are disclosed. These compounds are based on an ortho nitro benzyl configuration employing an .alpha. substituent having high bulk, steric characteristics, and electron withdrawing ability. The enhanced efficacy is particularly found in compounds both having a suitable .alpha. substituent and a second ortho substituent with large electron withdrawing and steric effects.

    Abstract translation: 公开了用于化学放大抗蚀剂中使用的光酸产生剂的光酸发生器。 这些化合物基于采用具有高体积，空间特征和吸电能力的α取代基的邻硝基苄基构型。 在具有合适的α取代基的化合物和具有大的吸电子和立体效应的第二邻位取代基的化合物中，特别发现增强的功效。

    METHODS FOR CONTROLLING DEFECTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) PHOTOMASK SUBSTRATE
    39.
    发明申请
    METHODS FOR CONTROLLING DEFECTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) PHOTOMASK SUBSTRATE 有权
    控制超极紫外光刻（EUVL）光电子基板缺陷的方法

    公开(公告)号：US20140045103A1

    公开(公告)日：2014-02-13

    申请号：US13774010

    申请日：2013-02-22

    Applicant: Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

    Inventor： Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

    IPC: G03F1/00

    CPC classification number: G03F1/00 ,  G03F1/22 ,  G03F1/60

    Abstract: Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.

    Abstract translation: 提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。 在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定 在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

Patent Agency Ranking