公开(公告)号：US07041606B2

公开(公告)日：2006-05-09

申请号：US10644186

申请日：2003-08-20

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： H01L21/31

CPC分类号： H01L21/7687 ,  C23C18/165 ,  C23C18/44 ,  H01L21/288 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.

摘要翻译： 一种形成氧化屏障的方法，包括至少部分地将半导体器件结构浸入包括至少一种金属盐和至少一种还原剂的化学镀浴中。 至少一种金属盐与至少一种还原剂的反应同时沉积金属及其掺杂剂。 氧化屏障可用于形成诸如电容器电极的半导体器件结构的导电结构，或者可以与半导体器件结构的导电或半导体结构相邻形成以防止其氧化。 氧化屏障对于在介电结构从诸如Ta 2 O 5 B或BST的高介电常数材料的形成和退火过程中防止氧化特别有用。

公开(公告)号：US06589414B2

公开(公告)日：2003-07-08

申请号：US09875502

申请日：2001-06-04

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： C25D548

CPC分类号： H01L21/76849 ,  C23C8/02 ,  H01L21/2885 ,  H01L21/76856 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： Nitride layer formation includes a method wherein a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The processing temperature during the electrodepositing and the converting may be selected not to exceed 500° C. The thickness and composition of the nitride layer may be effective to limit diffusion of the wiring through the nitride layer. A diffusion barrier forming method may include forming a patterned layer of integrated circuit copper wiring over a substrate. The copper wiring may be exposed to a chromium-ion-comprising environment while applying an electric current to the copper wiring to deposit chromium on the copper wiring. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitrogen-comprising plasma.

摘要翻译： 氮化物层形成包括其中将材料电沉积在基底上并且至少部分地转化成包含氮和电沉积材料的层的方法。 电沉积可以在基底的导电部分上基本上选择性地发生。 此外，转换可以包括将电沉积材料暴露于含氮等离子体。 氮化铬和氮氧化铬是含氮材料的实例。 集成电路的铜或金布线是基板的例子。 电沉积和转换期间的处理温度可以选择为不超过500℃。氮化物层的厚度和组成可以有效地限制布线通过氮化物层的扩散。 扩散阻挡层形成方法可以包括在衬底上形成集成电路铜布线的图案化层。 铜线可能暴露于含铬离子的环境中，同时向铜布线施加电流以在铜布线上沉积铬。 可以使用含氮等离子体将铬转化为含氮化铬的扩散阻挡层。

公开(公告)号：US20110203940A1

公开(公告)日：2011-08-25

申请号：US13098572

申请日：2011-05-02

申请人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

发明人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

IPC分类号： C25F3/02 ,  C25B9/00

CPC分类号： H01L21/67086 ,  B82Y30/00 ,  C23F1/02 ,  C23F1/10 ,  H01B1/122 ,  H01L21/32115 ,  H01L21/67075

摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。

公开(公告)号：US20100273305A1

公开(公告)日：2010-10-28

申请号：US12763430

申请日：2010-04-20

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： G11C13/0011 ,  C23C18/165 ,  C23C18/1837 ,  C25D7/123 ,  G11C13/0004 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1658 ,  Y10T428/31678

摘要： Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resistance variable material, and then plating a conductive material to a desired thickness to form a second (upper) electrode. In another embodiment, the surface of the chalcogenide layer can be treated with an activating agent such as palladium, a conductive metal can be electrolessly plated onto the activated areas to form a thin diffusion layer, metal ions from the diffusion layer can be diffused into the chalogenide material to form a resistance variable material, and a conductive material plated over the resistance variable material to form the upper electrode. The invention provides a process for controlling the diffusion of metal into the chalcogenide material to form a resistance variable material by depositing the mass of the upper electrode by a metal plating technique.

摘要翻译： 提供了非易失性，电阻可变存储器件，集成电路元件以及形成这种器件的方法。 根据本发明的方法的一个实施例，存储器件可以通过在第一（下）电极上沉积硫族化物材料，在硫族化物材料上溅射沉积导电材料的薄扩散层，从扩散中扩散金属来制造 形成硫族化物材料，得到含金属的电阻变化材料，然后将导电材料镀覆到所需厚度以形成第二（上）电极。 在另一个实施方案中，硫族化物层的表面可以用诸如钯的活化剂处理，导电金属可以无电镀在活化区上形成薄的扩散层，来自扩散层的金属离子可以扩散到 硫族化物材料以形成电阻可变材料，以及镀在电阻可变材料上以形成上电极的导电材料。 本发明提供一种通过金属电镀技术沉积上部电极的质量来控制金属向硫族化物材料的扩散以形成电阻可变材料的方法。

公开(公告)号：US07375014B2

公开(公告)日：2008-05-20

申请号：US11053778

申请日：2005-02-08

申请人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

发明人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

IPC分类号： H01L21/20

CPC分类号： H01L27/10852 ,  H01L21/2885 ,  H01L27/10808 ,  H01L27/10817 ,  H01L28/60 ,  H01L28/90 ,  Y10S257/906

摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

公开(公告)号：US07348234B2

公开(公告)日：2008-03-25

申请号：US11053816

申请日：2005-02-08

申请人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

发明人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

IPC分类号： H01L21/8242

CPC分类号： H01L27/10852 ,  H01L21/2885 ,  H01L27/10808 ,  H01L27/10817 ,  H01L28/60 ,  H01L28/90 ,  Y10S257/906

摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

公开(公告)号：US20080041725A1

公开(公告)日：2008-02-21

申请号：US11507291

申请日：2006-08-21

申请人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

发明人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

IPC分类号： B01D35/06

CPC分类号： H01L21/67086 ,  B82Y30/00 ,  C23F1/02 ,  C23F1/10 ,  H01B1/122 ,  H01L21/32115 ,  H01L21/67075

摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。

公开(公告)号：US07282131B2

公开(公告)日：2007-10-16

申请号：US11053817

申请日：2005-02-08

申请人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

发明人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

IPC分类号： C25D5/02

CPC分类号： H01L27/10852 ,  H01L21/2885 ,  H01L27/10808 ,  H01L27/10817 ,  H01L28/60 ,  H01L28/90 ,  Y10S257/906

摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

公开(公告)号：US07264988B2

公开(公告)日：2007-09-04

申请号：US11265750

申请日：2005-11-02

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： H01L21/00

CPC分类号： G11C13/0011 ,  C23C18/165 ,  C23C18/1837 ,  C25D7/123 ,  G11C13/0004 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1658 ,  Y10T428/31678

摘要： Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resistance variable material, and then plating a conductive material to a desired thickness to form a second (upper) electrode. In another embodiment, the surface of the chalcogenide layer can be treated with an activating agent such as palladium, a conductive metal can be electrolessly plated onto the activated areas to form a thin diffusion layer, metal ions from the diffusion layer can be diffused into the chalogenide material to form a resistance variable material, and a conductive material plated over the resistance variable material to form the upper electrode. The invention provides a process for controlling the diffusion of metal into the chalcogenide material to form a resistance variable material by depositing the mass of the upper electrode by a metal plating technique.

摘要翻译： 提供了非易失性，电阻可变存储器件，集成电路元件以及形成这种器件的方法。 根据本发明的方法的一个实施例，存储器件可以通过在第一（下）电极上沉积硫族化物材料，在硫族化物材料上溅射沉积导电材料的薄扩散层，从扩散中扩散金属来制造 形成硫族化物材料，得到含金属的电阻变化材料，然后将导电材料镀覆到所需厚度以形成第二（上）电极。 在另一个实施方案中，硫族化物层的表面可以用诸如钯的活化剂处理，导电金属可以无电镀在活化区上形成薄的扩散层，来自扩散层的金属离子可以扩散到 硫族化物材料以形成电阻可变材料，以及镀在电阻可变材料上以形成上电极的导电材料。 本发明提供一种通过金属电镀技术沉积上部电极的质量来控制金属向硫族化物材料的扩散以形成电阻可变材料的方法。

公开(公告)号：US06774049B2

公开(公告)日：2004-08-10

申请号：US10375783

申请日：2003-02-26

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： H01L2131

CPC分类号： H01L21/7687 ,  C23C18/165 ,  C23C18/44 ,  H01L21/288 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.