-
公开(公告)号：US10043608B2
公开(公告)日：2018-08-07
申请号：US14131948
申请日：2012-08-20
申请人： Takahiro Sato , Yuya Ishima , Shusaku Umemoto , Takashi Suzuki , Satoru Okamoto , Yoshikazu Sakaguchi
发明人： Takahiro Sato , Yuya Ishima , Shusaku Umemoto , Takashi Suzuki , Satoru Okamoto , Yoshikazu Sakaguchi
CPC分类号： H01F5/06 , H01F17/0013 , H01F2017/004
摘要： A laminated coil component includes an element assembly formed by laminating a plurality of insulation layers and a coil unit formed inside the element assembly by a plurality of coil conductors. The element assembly includes a coil unit arrangement layer which has the coil unit arranged therein, and at least a pair of shape retention layers which is provided to have the coil unit arrangement layer interposed therebetween to retain a shape of the coil unit arrangement layer. The shape retention layer is made from glass-ceramic containing SrO, and a softening point of the coil unit arrangement layer is lower than a softening point or a melting point of the shape retention layer.
-
公开(公告)号：US09051231B2
公开(公告)日：2015-06-09
申请号：US13119658
申请日：2009-09-24
摘要： According to the first characteristic of the present invention, there is provided a production process for 1,3,3,3-tetrafluoropropene including: the first step of reacting 1,1,1,3,3-pentachloropropane with hydrogen fluoride thereby obtaining 1-chloro-3,3,3-trifluoropropene; and the second step of reacting 1-chloro-3,3,3-trifluoropropene obtained in the first step with hydrogen fluoride in a gaseous phase in the presence of a fluorination catalyst. According to the second characteristic of the present invention, there is provided a dehydration process including bringing 1,3,3,3-tetrafluoropropene containing at least water into contact with zeolite.
摘要翻译： 根据本发明的第一特征，提供了一种1,3,3,3-四氟丙烯的制备方法，包括：使1,1,1,3,3-五氯丙烷与氟化氢反应的第一步骤，从而得到1 - 氯-3,3,3-三氟丙烯; 在氟化催化剂存在下，将第一步得到的1-氯-3,3,3-三氟丙烯与氟化氢反应的气相的第二步。 根据本发明的第二特征，提供了使至少含有水的1,3,3,3-四氟丙烯与沸石接触的脱水方法。
-
33.发明授权Wiring over substrate, semiconductor device, and methods for manufacturing thereof 有权衬底上的接线，半导体器件及其制造方法公开(公告)号：US08669663B2
公开(公告)日：2014-03-11
申请号：US13187746
申请日：2011-07-21
申请人： Shinya Sasagawa , Satoru Okamoto , Shigeharu Monoe
发明人： Shinya Sasagawa , Satoru Okamoto , Shigeharu Monoe
IPC分类号： H01L23/48
CPC分类号： H01L27/3276 , G02F2001/13629 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L51/0021 , H01L51/0023 , H01L51/5281 , H01L2924/0002 , H05K3/06 , H05K2203/0315 , H05K2203/0346 , H05K2203/095 , H05K2203/1476 , H01L2924/00
摘要： A wiring over a substrate capable of reducing particles between wirings and a method for manufacturing the wiring is disclosed. A wiring over a substrate capable of preventing short-circuiting between wirings due to big difference in projection and depression between wirings and a method for manufacturing the wiring is also disclosed. Further, a wiring over a substrate capable of preventing cracks in the insulating layer due to stress at the edge of a wiring or particles and a method for manufacturing the wiring is also disclosed. According to the present invention, a method for manufacturing a wiring over a substrate is provided that comprises the steps of: forming a first conductive layer over an insulating surface; forming a first mask pattern over the first conductive layer; forming a second mask pattern by etching the first mask pattern under a first condition, simultaneously, forming a second conductive layer having a side having an angle of inclination cross-sectionally by etching the first conductive layer; and forming a third conductive layer and a third mask pattern by etching the second conductive layer and the second mask pattern under a second condition; wherein a selective ratio under the first condition of the first conductive layer to the first mask pattern is in a range of 0.25 to 4, and a selective ratio under the second condition of the second conductive layer to the second mask pattern is larger than that under the first condition.
摘要翻译： 公开了一种能够减少布线之间的颗粒的基板上的布线和用于制造布线的方法。 还公开了一种能够防止布线之间的大的差异和配线间的凹陷之间的布线之间的短路的布线和布线的制造方法。 此外，还公开了能够防止由于布线或颗粒的边缘处的应力导致的绝缘层中的裂纹的基板上的布线以及布线的制造方法。 根据本发明，提供了一种用于在衬底上制造布线的方法，包括以下步骤：在绝缘表面上形成第一导电层; 在所述第一导电层上形成第一掩模图案; 通过在第一条件下蚀刻第一掩模图案形成第二掩模图案，同时通过蚀刻第一导电层形成具有横截面为倾斜角的一侧的第二导电层; 以及通过在第二条件下蚀刻所述第二导电层和所述第二掩模图案来形成第三导电层和第三掩模图案; 其中在第一导电层与第一掩模图案的第一条件下的选择比在0.25至4的范围内，并且在第二导电层与第二掩模图案的第二条件下的选择比大于 第一个条件。
-
34.发明授权Image taking apparatus, image reproducing apparatus, image taking method and program 有权图像摄取装置，图像再现装置，图像拍摄方法和程序公开(公告)号：US08363092B2
公开(公告)日：2013-01-29
申请号：US13291846
申请日：2011-11-08
申请人： Satoru Okamoto
发明人： Satoru Okamoto
IPC分类号： H04N13/02
CPC分类号： H04N13/20 , H04N5/2258 , H04N5/232 , H04N5/23245 , H04N5/772 , H04N5/907 , H04N9/8042 , H04N9/8063 , H04N9/8205 , H04N13/189
摘要： To prevent information required for reproducing of a 3D/multi-viewpoint image being lost even in a case in which editing or the like of the 3D/multi-viewpoint image is performed using a device or application software that does not support 3D/multi-viewpoint images, a compound-eye digital camera can switch between a multi-viewpoint image taking mode that images a subject image viewed from a plurality of viewpoints and a single viewpoint image taking mode that takes a subject image viewed from a single viewpoint. When taking an image in the multi-viewpoint image taking mode, the compound-eye digital camera sets a protect flag for multi-viewpoint images acquired with an image pickup device and records the multi-viewpoint images. As a result, the taken multi-viewpoint images are protected, and erasure or editing of the images cannot be performed without permission.
摘要翻译： 即使在使用不支持3D /多视点图像的设备或应用软件执行3D /多视点图像的编辑等的情况下，也可以防止再现3D /多视点图像的丢失所需的信息， 视点图像，复眼数码相机可以在从多个视点观看的被摄体图像成像的多视点图像拍摄模式和从单个视点观看被摄体图像的单个视点图像拍摄模式之间切换。 当以多视点拍摄模式拍摄图像时，复眼数码相机设置用图像拾取装置获取的多视点图像的保护标志，并记录多视点图像。 结果，拍摄的多视点图像被保护，并且不允许擦除或编辑图像。
-
公开(公告)号：US08243121B2
公开(公告)日：2012-08-14
申请号：US12244438
申请日：2008-10-02
申请人： Satoshi Nakamura , Mikio Watanabe , Izumi Miyake , Satoru Okamoto
发明人： Satoshi Nakamura , Mikio Watanabe , Izumi Miyake , Satoru Okamoto
CPC分类号： H04N5/23238 , H04N1/2166 , H04N1/2187 , H04N5/23293 , H04N5/765 , H04N5/772 , H04N5/91 , H04N9/7921 , H04N9/8227 , H04N13/189 , H04N13/289 , H04N2013/0088 , H04N2101/00 , H04N2201/3254
摘要： This aims at providing an image recording apparatus and an image recording method which can output an image suitable for an aspect ratio of a display screen. When connection history data does not fulfill a predetermined condition, predetermined viewpoint image data is selected as a representative image. On the other hand, when the connection history data fulfills the predetermined condition, image data of a plurality of viewpoints taken by the image pickup units are synthesized to generate panoramic image data horizontally wider than the image data of viewpoints, and the generated image data is set as representative image data. Then, the panoramic image file which includes image data of respective viewpoints as sub-image data as well as the representative image data, is generated in the multi-page format, and is recorded in the memory card.
摘要翻译： 这旨在提供一种可以输出适合于显示屏的纵横比的图像的图像记录装置和图像记录方法。 当连接历史数据不满足预定条件时，选择预定的视点图像数据作为代表图像。 另一方面，当连接历史数据满足预定条件时，由图像拾取单元拍摄的多个视点的图像数据被合成以产生水平宽于视点图像数据的全景图像数据，并且所生成的图像数据是 设置为代表性图像数据。 然后，以多页格式生成包括作为子图像数据的各个视点的图像数据以及代表图像数据的全景图像文件，并将其记录在存储卡中。
-
公开(公告)号：US20120123172A1
公开(公告)日：2012-05-17
申请号：US13273985
申请日：2011-10-14
IPC分类号： C07C17/20
CPC分类号： C07C17/206 , B01J21/04 , B01J21/18 , B01J23/26 , B01J27/12 , B01J27/128 , B01J27/132 , B01J27/135 , B01J27/138 , B01J37/0201 , B01J37/26 , C01B7/0737 , C01B7/196 , C01B7/197 , C07C17/38 , C07C17/383 , Y02P20/582 , C07C21/18
摘要： Production of trans-1,3,3,3-tetrafluoropropene by reacting 1-chloro-3,3,3-trifluoropropene with hydrogen fluoride to obtain a reaction product A containing formed trans-1,3,3,3-tetrafluoropropene, unreacted 1-chloro-3,3,3-trifloropropene and hydrogen fluoride, and by-product cis-1,3,3,3-tetrafluoropropene, 1,1,1,3,3-pentafluoropropane and hydrogen chloride; distilling reaction product A to recover a distillation bottom product containing 1-chloro-3,3,3-trifloropropene and hydrogen fluoride and supplying recovered distillation bottom product to the reacting step; recovering hydrogen fluoride from a residue B remaining after recovery of the distillation bottom product and supplying recovered hydrogen fluoride to the reacting step; contacting a residue C remaining after recovery of hydrogen fluoride with water or aqueous sodium hydroxide solution to separate hydrogen chloride; dehydrating a residue D remaining after separation of hydrogen chloride; and distilling a residue E remaining after the dehydration to obtain trans-1,3,3,3-tetrafluoropropene. The method reuses unreacted reactants and produces the target compound efficiently.
摘要翻译： 通过使1-氯-3,3,3-三氟丙烯与氟化氢反应制备反式-1,3,3,3-四氟丙烯，得到含有形成的反式-1,3,3,3-四氟丙烯的反应产物A，未反应 1-氯-3,3,3-三氟丙烯和氟化氢，以及副产物顺式-1,3,3,3-四氟丙烯，1,1,1,3,3-五氟丙烷和氯化氢; 蒸馏反应产物A以回收含有1-氯-3,3,3-三氯丙烯和氟化氢的蒸馏塔底产物，并将回收的蒸馏塔底产物供应至反应步骤; 从蒸馏塔底产物回收剩余的残渣B回收氟化氢，并将回收的氟化氢供应到反应步骤; 使氟化氢与水或氢氧化钠水溶液回收后残留的C残留物与氯化氢分离; 使氯化氢分离后剩余的残渣D脱水; 并蒸馏出脱水后残留的E，得到反式-1,3,3,3-四氟丙烯。 该方法重新使用未反应的反应物并有效地产生目标化合物。
-
37.发明授权公开(公告)号：US07944651B2
公开(公告)日：2011-05-17
申请号：US12006723
申请日：2008-01-04
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , H01L43/08 , H01L43/10
摘要： Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer. A magnetic shield underlayer film is formed on the top surfaces of the free layer, the magnetic domain control layer and the refill insulation film and an upper magnetic shield layer is formed on the magnetic shield underlayer film.
摘要翻译： 本发明的实施例有助于防止垂直于平面型（CPP型）磁阻效应头的电流的偏置磁场的减小，从而抑制读取输出的减小。 根据一个实施例，在下磁屏蔽的顶部上形成CPP型磁阻效应膜。 在中间层的两侧和CPP型磁阻效应膜的自由层上形成补充绝缘膜和磁畴控制层。 侧壁保护膜形成在补充绝缘膜的侧壁上并且在自由层的顶部上，以便限定磁畴控制层的高度。 为了增加磁畴控制层的膜厚度，磁畴控制层和再填充绝缘膜高于自由层的顶表面。 在自由层，磁畴控制层和再填充绝缘膜的上表面上形成有磁屏蔽下层膜，在磁屏蔽下层膜上形成上磁屏蔽层。
-
公开(公告)号：US07554128B2
公开(公告)日：2009-06-30
申请号：US11169182
申请日：2005-06-28
CPC分类号： H01L51/5218 , H01L27/12 , H01L27/3246 , H01L29/41733 , H01L29/458 , H01L51/5036 , H01L51/5209 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).
摘要翻译： 具有提高开口率和光提取效率的结构的发光装置可以解决在形成装置本身期间发生的蚀刻残留的问题，并且由于覆盖不良和短路而减少劣化，从而大大改善 可靠性和制造发光器件的方法。 在具有提高光提取效率的结构的发光装置中，用于形成第一电极的材料是Ti / TiN / Al（或Al-Ti）/ Ti（或TiN）。
-
公开(公告)号：US07547627B2
公开(公告)日：2009-06-16
申请号：US11273740
申请日：2005-11-15
IPC分类号： H01L21/4763
CPC分类号： H01L27/124 , C23F1/20 , C23F1/26 , G02F1/136227 , G02F2001/13629 , H01L21/32134 , H01L21/32136 , H01L21/76838 , H01L21/76885
摘要： It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching.
摘要翻译： 本发明的目的是提供一种包括具有优选形状的布线的半导体器件。 一种制造方法包括以下步骤：形成连接到元件的第一导电层和其上的第二导电层; 在所述第二导电层上形成抗蚀剂掩模; 通过使用掩模的干法蚀刻处理第二导电层; 以及通过左蚀刻法进行湿式蚀刻来处理第一导电层，其中在干蚀刻中第二导电层的蚀刻速率高于第一导电层的蚀刻速率，并且其中第二导电层的蚀刻速率相同 与湿蚀刻中的第一导电层的相同或更多。
-
公开(公告)号：US07483446B2
公开(公告)日：2009-01-27
申请号：US10807699
申请日：2004-03-23
申请人： Satoru Okamoto , Ken-ichi Sato
发明人： Satoru Okamoto , Ken-ichi Sato
IPC分类号： H04J3/16
CPC分类号： H04J14/0227 , H04J3/1617 , H04J14/0241 , H04J14/0278 , H04J14/0284 , H04J2203/0083 , H04Q11/0066 , H04Q11/0071
摘要： The present invention discloses a packet transmission device and a packet transmission system which can realize high-capacity communication. The transmission device transmits packets over a wavelength division multiplexing (WDM) link by mapping the packets into an optical path signal directly without any other medium such as an SDH path. The present invention also discloses a packet transmission device and a packet transmission system which can realize high-capacity communication over an SDH transmission link by mapping the packets directly into an SDH section payload without adding any VC path overhead in order to use the entire SDH section payload area.
摘要翻译： 本发明公开了一种可实现高容量通信的分组传输装置和分组传输系统。 传输设备通过波分复用（WDM）链路发送分组，通过直接将分组映射到光路信号中而不需要任何其它介质，例如SDH路径。 本发明还公开了一种分组传输装置和分组传输系统，其可以通过将分组直接映射到SDH部分有效载荷中而不增加任何VC路径开销来实现SDH传输链路的大容量通信，以便使用整个SDH部分 有效载荷区域。
-
-
-
-
-
-
-
-
-
搜索结果
127 条记录 (耗时 0.027 秒)
