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    Dry etching agent and dry etching method using the same
    1.
    发明授权
    Dry etching agent and dry etching method using the same 有权
    干蚀刻剂和干蚀刻法使用该方法

    公开(公告)号：US09093388B2

    公开(公告)日：2015-07-28

    申请号：US13576093

    申请日：2011-01-25

    申请人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

    发明人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

    IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/311

    CPC分类号： H01L21/31055 ,  C09K13/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

    摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

    摘要翻译： 根据本发明的干蚀刻剂包含（A）由化学式CF 3C≡CX表示的氟化丙炔，其中X为H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。 和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。 这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

    Sensor shape of a CPP magnetic head for improving the MR ratio
    3.
    发明授权
    Sensor shape of a CPP magnetic head for improving the MR ratio 有权
    用于改善MR比的CPP磁头的传感器形状

    公开(公告)号：US08355224B2

    公开(公告)日：2013-01-15

    申请号：US12011904

    申请日：2008-01-29

    申请人： Satoru Okamoto ,  Koji Okazaki ,  Shuuichi Kojima ,  Nobuo Yoshida ,  Katsuro Watanabe ,  Hiroyuki Katada

    发明人： Satoru Okamoto ,  Koji Okazaki ,  Shuuichi Kojima ,  Nobuo Yoshida ,  Katsuro Watanabe ,  Hiroyuki Katada

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/08

    摘要： Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦X≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.

    摘要翻译： 本发明的实施例有助于通过在传感器膜被蚀刻，轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。 根据一个实施例，当假设空气轴承表面上的传感器膜的厚度为T时，介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离 和传感器膜最低部分的一端，满足1.2×T＆nlE; X＆nlE; 2.5×T的关系，并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部 不存在于自由层末端的轨道中心部分。 在蚀刻光束的入射角变化的同时蚀刻传感器膜，并且当假定与传感器膜表面垂直的方向为入射角为0时，在其入射角 刻蚀光束随时间变小。

    Method for manufacturing semiconductor device
    5.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08124544B2

    公开(公告)日：2012-02-28

    申请号：US12477303

    申请日：2009-06-03

    申请人： Satoru Okamoto ,  Teruyuki Fujii ,  Hideto Ohnuma ,  Akihiro Ishizuka

    发明人： Satoru Okamoto ,  Teruyuki Fujii ,  Hideto Ohnuma ,  Akihiro Ishizuka

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L27/124 ,  C23F1/20 ,  C23F1/26 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/76838 ,  H01L21/76885

    摘要： It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching.

    摘要翻译： 本发明的目的是提供一种包括具有优选形状的布线的半导体器件。 一种制造方法包括以下步骤：形成连接到元件的第一导电层和其上的第二导电层; 在所述第二导电层上形成抗蚀剂掩模; 通过使用掩模的干法蚀刻处理第二导电层; 以及通过左蚀刻法进行湿式蚀刻来处理第一导电层，其中在干蚀刻中第二导电层的蚀刻速率高于第一导电层的蚀刻速率，并且其中第二导电层的蚀刻速率相同 与湿蚀刻中的第一导电层的相同或更多。

    Optical Node Device, Network Control Device, Maintenance-Staff Device, Optical Network, and 3R Relay Implementation Node Decision Method
    9.
    发明申请
    Optical Node Device, Network Control Device, Maintenance-Staff Device, Optical Network, and 3R Relay Implementation Node Decision Method 有权
    光节点设备，网络控制设备，维护人员设备，光网络和3R中继实现节点决策方法

    公开(公告)号：US20090052895A1

    公开(公告)日：2009-02-26

    申请号：US12255923

    申请日：2008-10-22

    申请人： Eiji Oki ,  Akira Misawa ,  Masaru Katayama ,  Satoru Okamoto

    发明人： Eiji Oki ,  Akira Misawa ,  Masaru Katayama ,  Satoru Okamoto

    IPC分类号： H04J14/00

    CPC分类号： H04J14/0284 ,  H04B10/299 ,  H04J14/0227 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0256 ,  H04J14/0257 ,  H04J14/0258 ,  H04J14/0267 ,  H04J14/0269 ,  H04L41/12

    摘要： An economical optical network is constituted by effectively using network resources by using the minimum number of, or minimum capacity of 3R repeaters. 3R section information corresponding to topology information on the optical network to which an optical node device itself belongs is stored, and the 3R section information stored is referred so as to autonomously determine whether or not the optical node device itself is an optical node device for implementing the 3R relay when setting an optical path passing through the optical node device itself. Alternatively, when the optical node device itself is a source node, another optical node device for implementing the 3R relay among the other optical node devices through which the optical path from the optical node device itself to the destination node passes is identified, and this identified optical node device is requested to implement the 3R relay when setting an optical path in which the optical node device itself is a source node.

    摘要翻译： 通过使用3R中继器的最小或最小容量有效地使用网络资源来构成经济的光网络。 存储与光节点设备本身所属的光网络上的拓扑信息对应的3R部分信息，并且参考存储的3R部分信息，以便自主地确定光节点设备本身是否是用于实现的光节点设备 当设置通过光节点设备本身的光路时，3R继电器。 或者，当光节点设备本身是源节点时，识别用于在从光节点设备本身到目的地节点通过的光路经过的其他光节点设备中实现3R中继器的另一光节点设备，并且这被识别 要求光节点设备在设置光节点设备本身是源节点的光路时实现3R中继。

    Sensor shape and etching process of CPP magnetic head for reduce property degradation
    10.
    发明申请
    Sensor shape and etching process of CPP magnetic head for reduce property degradation 有权
    CPP磁头的传感器形状和蚀刻工艺，用于降低性能下降

    公开(公告)号：US20090046394A1

    公开(公告)日：2009-02-19

    申请号：US12011904

    申请日：2008-01-29

    申请人： Satoru Okamoto ,  Koji Okazaki ,  Shuuichi Kojima ,  Nobuo Yoshida ,  Katsuro Watanabe ,  Hiroyuki Katada

    发明人： Satoru Okamoto ,  Koji Okazaki ,  Shuuichi Kojima ,  Nobuo Yoshida ,  Katsuro Watanabe ,  Hiroyuki Katada

    IPC分类号： G11B5/33 ,  B44C1/22

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/08

    摘要： Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦x≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.

    摘要翻译： 本发明的实施例有助于通过在传感器膜被蚀刻，轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。 根据一个实施例，当假设空气轴承表面上的传感器膜的厚度为T时，介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离 和传感器膜最低部分的端部，满足1.2×T <= x <= 2.5×T的关系，并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部 不存在于自由层末端的轨道中心部分。 在蚀刻光束的入射角变化的同时蚀刻传感器膜，并且当假定与传感器膜表面垂直的方向为入射角为0时，在其入射角 刻蚀光束随时间变小。