公开(公告)号：US20050047417A1

公开(公告)日：2005-03-03

申请号：US10822309

申请日：2004-04-12

Applicant: Seung-Cheol Lee ,  Hyo-Soon Lee ,  Sang-Beom Lee ,  Hyun-Sool Kim

Inventor： Seung-Cheol Lee ,  Hyo-Soon Lee ,  Sang-Beom Lee ,  Hyun-Sool Kim

IPC: H04B1/40 ,  H04N7/52 ,  H04L12/56

CPC classification number: H04N21/4392 ,  H04N21/23614 ,  H04N21/2368 ,  H04N21/4305 ,  H04N21/4307 ,  H04N21/4341 ,  H04N21/4348 ,  H04N21/44004

Abstract: A multimedia reproduction apparatus in a mobile communication terminal comprising: a data parsing section for dividing multimedia data into video data and other data and then parsing the video data and the other data; a video data processing section for decoding the parsed video data; a media delay output controller for delaying the other data parsed by and transmitted from the data parsing section according to buffering information of the video data processing section, for outputting the delayed data, and for generating a synchronizing signal; an audio data processing section for decoding and outputting audio data from among the other data output from the media delay output controller; a video data output section for reading and outputting the video data; and a synchronizing section for synchronizing and outputting the video data.

Abstract translation: 一种移动通信终端中的多媒体再现设备，包括：数据解析部分，用于将多媒体数据分解为视频数据和其他数据，然后解析视频数据和其他数据; 视频数据处理部分，用于对解析的视频数据进行解码; 媒体延迟输出控制器，用于根据视频数据处理部分的缓冲信息延迟由数据解析部分解析并发送的其他数据，用于输出延迟数据，并产生同步信号; 音频数据处理部分，用于从从媒体延迟输出控制器输出的其他数据中解码和输出音频数据; 用于读取和输出视频数据的视频数据输出部分; 以及用于同步和输出视频数据的同步部分。

公开(公告)号：US06858543B2

公开(公告)日：2005-02-22

申请号：US10730688

申请日：2003-12-08

Applicant: Seung Cheol Lee ,  Sang Wook Park

Inventor： Seung Cheol Lee ,  Sang Wook Park

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/28 ,  H01L21/302 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/088 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/28273 ,  H01L21/31662 ,  H01L27/11526 ,  H01L27/11543 ,  H01L27/11546

Abstract: The present invention relates to a method of forming a tunnel oxide film in a semiconductor device, in which a predetermined thickness of the oxide film is not removed during a process of removing the oxide film in a memory cell area and a low voltage transistor area after a gate oxide film for a high voltage transistor is formed, thereby preventing increase of surface roughness on a substrate and contamination caused by absorbed carbon components which are generated when the oxide film and the photo resist film are removed. Therefore, it is possible to form a tunnel oxide film having an excellent film quality.

Abstract translation: 本发明涉及一种在半导体器件中形成隧道氧化物膜的方法，其中在去除存储单元区域中的氧化膜的过程中除去氧化膜的预定厚度和在 形成用于高电压晶体管的栅极氧化膜，从而防止在去除氧化物膜和光致抗蚀剂膜时产生的吸收的碳成分引起的基板表面粗糙度的增加和污染。 因此，可以形成具有优异的膜质量的隧道氧化膜。

公开(公告)号：US06653680B2

公开(公告)日：2003-11-25

申请号：US10042213

申请日：2002-01-11

Applicant: Cha Deok Dong ,  Seung Cheol Lee ,  Sang Wook Park ,  Dong Jin Kim

Inventor： Cha Deok Dong ,  Seung Cheol Lee ,  Sang Wook Park ,  Dong Jin Kim

IPC: H01L2994

CPC classification number: H01L28/91 ,  H01L21/76895 ,  H01L28/84

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder. By depositing an amorphous silicon film on the inner wall of the cylinder-type capacitor and Si-rich tungsten silicide film on the outer wall, the surface area of the inner wall expands through normal SMPS and a rugged tungsten silicide film is formed on the outer wall. Spacing between cells is preserved, while generation of a bridge is prevented.

Abstract translation: 半导体器件中的圆柱形存储电极通过在多氧化物膜中形成接触孔并在膜上和孔中形成第一薄膜来制造。 接下来，在第一薄膜上形成芯氧化膜和抗反射涂膜，以确定气缸的高度。 然后通过蚀刻抗反射涂膜，芯氧化物膜和第一薄膜使得暴露多晶氧化物膜形成图案。 在总体结构上形成第二薄膜，在第二薄膜上形成硅化钨层。 然后通过对硅化钨膜和第二薄膜进行毯式蚀刻来形成圆筒的内壁和外壁，使得芯氧化膜暴露。 在去除核心氧化物膜之后，进行选择性亚稳态多晶硅（SMPS）工艺，使得在圆筒的内壁和外壁处产生不同的晶粒生长。 然后通过使圆筒退火形成存储电极。 通过在圆筒型电容器的内壁和外壁上的富Si硅化钨膜上沉积非晶硅膜，内壁的表面积通过正常的SMPS膨胀，并且在外部形成坚固的硅化钨膜 壁。 保留了单元间的间隔，同时防止了桥的产生。

公开(公告)号：US08765587B2

公开(公告)日：2014-07-01

申请号：US13398235

申请日：2012-02-16

Applicant: Su Hyun Lim ,  Seung Cheol Lee

Inventor： Su Hyun Lim ,  Seung Cheol Lee

IPC: H01L21/3205 ,  H01L21/302

CPC classification number: H01L27/11521 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76224

Abstract: A method of manufacturing non-volatile memory devices includes forming a gate insulating layer and a first conductive layer over a semiconductor substrate, etching the first conductive layer and the gate insulating layer to expose part of the semiconductor substrate, forming trenches at a target depth of the semiconductor substrate by repeatedly performing a dry etch process for etching the exposed semiconductor substrate and a cleaning process for removing residues generated in the dry etch process, forming isolation layers within the trenches, forming a dielectric layer on a surface of the entire structure in which the isolation layers are formed, and forming a second conductive layer on the dielectric layer.

Abstract translation: 一种制造非易失性存储器件的方法包括在半导体衬底上形成栅极绝缘层和第一导电层，蚀刻第一导电层和栅极绝缘层以暴露部分半导体衬底，在目标深度处形成沟槽 通过重复执行用于蚀刻暴露的半导体衬底的干蚀刻工艺的半导体衬底和用于去除在干蚀刻工艺中产生的残留物的清洁工艺，在沟槽内形成隔离层，在整个结构的表面上形成介电层，其中 形成隔离层，并在电介质层上形成第二导电层。

公开(公告)号：US20120229359A1

公开(公告)日：2012-09-13

申请号：US13508965

申请日：2010-11-22

Applicant: Seung-Cheol Lee

Inventor： Seung-Cheol Lee

IPC: H01Q21/29

CPC classification number: H01Q21/0037 ,  H01Q3/32 ,  H01Q21/08

Abstract: A feeding system for feeding power using slow wave structure is disclosed. The feeding system includes a first substrate, a first pattern disposed on the first substrate, being a conductor, a second substrate separated from the first substrate, and a second pattern configured to locate on the second substrate, being a conductor. Here, the first pattern and the second pattern are connected electrically, and at least one of the first pattern and the second pattern has a slow wave structure.

Abstract translation: 公开了一种使用慢波结构馈电的馈电系统。 馈送系统包括第一衬底，设置在第一衬底上的第一图案，为导体，与第一衬底分离的第二衬底，以及配置为在第二衬底上定位为导体的第二图案。 这里，第一图案和第二图案电连接，并且第一图案和第二图案中的至少一个具有慢波结构。

公开(公告)号：USD664541S1

公开(公告)日：2012-07-31

申请号：US29393889

申请日：2011-06-10

Applicant: Eui-Seok Kim ,  Dong-Hee Won ,  Yong-Joo Lee ,  Seung-Cheol Lee

Designer： Eui-Seok Kim ,  Dong-Hee Won ,  Yong-Joo Lee ,  Seung-Cheol Lee

公开(公告)号：US07776445B2

公开(公告)日：2010-08-17

申请号：US12191801

申请日：2008-08-14

Applicant: Jae Kap Lee ,  Seung Cheol Lee ,  Phillip John ,  Wook Seong Lee ,  Jeon Kook Lee

Inventor： Jae Kap Lee ,  Seung Cheol Lee ,  Phillip John ,  Wook Seong Lee ,  Jeon Kook Lee

IPC: B32B9/00 ,  C23C16/26

CPC classification number: C30B29/02 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C23C16/01 ,  C23C16/26 ,  C30B25/02 ,  C30B29/04 ,  Y10S977/742 ,  Y10T428/30

Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.

Abstract translation: 本发明公开了石墨烯混合材料和石墨烯混合材料的制备方法，所述石墨烯混合材料包括：具有在其表面上断开晶格面的矩阵; 以及沿着在基体表面上断开的晶格面外延生长的石墨烯层，使得石墨烯层垂直于矩阵定向，并且彼此间隔开并以相同形状层叠在基体上。 石墨烯混合材料可用于下一代半导体器件，生物传感器，电化学电极等领域。

公开(公告)号：US07688357B2

公开(公告)日：2010-03-30

申请号：US11581885

申请日：2006-10-17

Applicant: Seung-Cheol Lee ,  Gun-Chul Song ,  Hee-Deog Kim ,  Sang-Woo Ryu

Inventor： Seung-Cheol Lee ,  Gun-Chul Song ,  Hee-Deog Kim ,  Sang-Woo Ryu

IPC: H04N9/73 ,  G06K9/00 ,  G03F3/08

CPC classification number: H04N9/735

Abstract: A method and apparatus for auto white balance in a portable terminal is provided. The method includes analyzing a captured image with histograms of red, green, and blue channels and a histogram of a gray channel; determining whether the histogram of the RGB channels and the histogram of the gray channel overlap over a predetermined percentage; measuring each color distribution average value of the RGB channels when the histogram of the RGB channels and the histogram of the gray channel overlap over a predetermined percentage; and performing color temperature correction using the color distribution average value measured in each of the RGB channels.

Abstract translation: 提供了一种用于便携式终端中的自动白平衡的方法和装置。 该方法包括使用红色，绿色和蓝色通道的直方图以及灰色通道的直方图来分析捕获的图像; 确定RGB通道的直方图和灰度通道的直方图是否重叠超过预定百分比; 当RGB通道的直方图和灰度通道的直方图重叠超过预定百分比时，测量RGB通道的每个颜色分布平均值; 以及使用在每个RGB通道中测量的颜色分布平均值进行色温校正。

公开(公告)号：US20100028573A1

公开(公告)日：2010-02-04

申请号：US12512942

申请日：2009-07-30

Applicant: Jae-Kap LEE ,  So-Hyung Lee ,  Jae-Pyoung Ahn ,  Seung-Cheol Lee ,  Wook-Seong Lee

Inventor： Jae-Kap LEE ,  So-Hyung Lee ,  Jae-Pyoung Ahn ,  Seung-Cheol Lee ,  Wook-Seong Lee

IPC: B32B9/00 ,  B32B1/08 ,  B32B1/00 ,  C23C16/26

CPC classification number: C23C16/26 ,  B82Y30/00 ,  C01B32/20 ,  C01P2002/78 ,  Y10T428/13 ,  Y10T428/261 ,  Y10T428/298 ,  Y10T428/2982

Abstract: Disclosed is AA′ graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA′ where alternate graphene layers exhibiting the AA′ stacking are translated by a half hexagon (1.23 Å). AA′ graphite has an interplanar spacing of about 3.44 Å larger than that of the conventional AB stacked graphite (3.35 Å) that has been known as the only crystal of pure graphite. This may allow the AA′ stacked graphite to have unique physical and chemical characteristics.

Abstract translation: 公开了具有石墨烯的新堆叠特征的AA'石墨及其制造方法。 石墨烯以AA'的顺序堆叠，其中呈现AA'层叠的交替石墨烯层被半六边形（1.23）平移。 AA'石墨具有比已知为纯石墨的唯一晶体的常规AB堆叠石墨（3.35埃）的面间距大约3.44埃。 这可能使AA的堆积石墨具有独特的物理和化学特性。

公开(公告)号：US20090080305A1

公开(公告)日：2009-03-26

申请号：US12021144

申请日：2008-01-28

Applicant: Seung Cheol LEE

Inventor： Seung Cheol LEE

IPC: G11B20/18 ,  G11B7/00

CPC classification number: G11B19/127 ,  G11B2007/0006 ,  G11B2220/232 ,  G11B2220/2545 ,  G11B2220/2562 ,  G11B2220/2579

Abstract: A method for discriminating a type of disc. The method includes receiving a signal having at least first and second peak points generated by an optical beam reflected from a record layer of the disc, comparing amplitudes of the first and second peak points, and determining the type of the disc based on a result of the comparing step.

Abstract translation: 一种用于区分盘的类型的方法。 所述方法包括接收具有由从盘的记录层反射的光束产生的至少第一和第二峰值点的信号，比较第一和第二峰值点的振幅，以及基于第一和第二峰值的结果确定盘的类型 比较步骤。