公开(公告)号：US06976905B1

公开(公告)日：2005-12-20

申请号：US09595227

申请日：2000-06-16

Applicant: Mingming Fang ,  Shumin Wang ,  Homer Chou

Inventor： Mingming Fang ,  Shumin Wang ,  Homer Chou

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  G11B5/84 ,  B24B1/00

CPC classification number: C09G1/02

Abstract: A method and system for planarizing or polishing a substrate, particularly a memory or rigid disk, are provided. The method comprises abrading at least a portion of the surface with a polishing system comprising (i) a polishing composition comprising water, an oxidizing agent, and about 0.04 M or higher phosphate ion or phosphonate ion, and (ii) abrasive material. The present invention also provides a system for planarizing or polishing a substrate comprising (i) a polishing composition comprising water, an oxidizing agent, and about 0.04 M or higher phosphate ion or phosphonate ion, and (ii) silica particles.

Abstract translation: 提供了用于平坦化或抛光衬底，特别是存储器或刚性盘的方法和系统。 该方法包括用抛光系统研磨表面的至少一部分，所述抛光系统包括（i）包含水，氧化剂和约0.04M或更高的磷酸根离子或膦酸根离子的抛光组合物和（ii）研磨材料。 本发明还提供了一种用于平坦化或抛光基材的系统，其包括（i）包含水，氧化剂和约0.04M或更高的磷酸根离子或膦酸根离子的抛光组合物和（ii）二氧化硅颗粒。

公开(公告)号：US06855266B1

公开(公告)日：2005-02-15

申请号：US09636246

申请日：2000-08-10

Applicant: Shumin Wang ,  Vlasta Brusic Kaufman ,  Steven K. Grumbine ,  Isaac K. Cherian

Inventor： Shumin Wang ,  Vlasta Brusic Kaufman ,  Steven K. Grumbine ,  Isaac K. Cherian

IPC: C09G1/02 ,  H01L21/321 ,  C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.

Abstract translation: 本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种 抛光添加剂，其增加系统抛光至少一层基材的速率，（iv）至少一种具有第一金属层的抛光选择性的停止化合物：至少约30:1的第二层，和（v ）抛光垫和/或磨料。 本发明还提供一种组合物，其包含（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂（iv）至少一种具有第一金属层的抛光选择性的停止化合物：第二 至少约30:1的层，与（v）抛光垫和/或研磨剂一起使用。

公开(公告)号：US06541434B2

公开(公告)日：2003-04-01

申请号：US10154231

申请日：2002-05-23

Applicant: Shumin Wang

Inventor： Shumin Wang

IPC: C11D330

CPC classification number: H01L21/02074 ,  C11D1/46 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/36 ,  C11D11/0047

Abstract: A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.

公开(公告)号：US06471884B1

公开(公告)日：2002-10-29

申请号：US09542774

申请日：2000-04-04

Applicant: Mingming Fang ,  Shumin Wang

Inventor： Mingming Fang ,  Shumin Wang

IPC: B24B100

CPC classification number: C09G1/02 ,  C09K3/1463 ,  G11B5/8404

Abstract: A method of planarizing or polishing the surface of a memory or rigid disk comprising abrading at least a portion of the surface with (i) a polishing composition comprising an oxidizing agent selected from the group consisting of persulfates and peroxides, an amino acid, and water, and (ii) an abrasive.

Abstract translation: 一种对存储器或刚性盘的表面进行平面化或抛光的方法，包括用（i）抛光组合物研磨所述表面的至少一部分，所述抛光组合物包含选自过硫酸盐和过氧化物，氨基酸和水的氧化剂 ，和（ii）研磨剂。

公开(公告)号：US06468137B1

公开(公告)日：2002-10-22

申请号：US09656665

申请日：2000-09-07

Applicant: Mingming Fang ,  Shumin Wang

Inventor： Mingming Fang ,  Shumin Wang

IPC: B24B100

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1472

Abstract: A method for planarizing or polishing a substrate, particularly a memory or rigid disk, is provided. The method comprises abrading at least a portion of a surface of a substrate with a polishing system comprising (i) a polishing composition comprising a liquid carrier, at least one oxidized halide, and at least one amino acid, and (ii) a polishing pad and/or an abrasive.

Abstract translation: 提供了一种用于平坦化或抛光衬底，特别是存储器或刚性盘的方法。 该方法包括用抛光系统研磨基材的表面的至少一部分，抛光系统包括（i）包含液体载体，至少一种氧化的卤化物和至少一种氨基酸的抛光组合物，和（ii）抛光垫 和/或研磨剂。

公开(公告)号：US06432828B1

公开(公告)日：2002-08-13

申请号：US09040630

申请日：1998-03-18

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: C09K1300

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

公开(公告)号：US06362104B1

公开(公告)日：2002-03-26

申请号：US09501221

申请日：2000-02-10

Applicant: Shumin Wang ,  Brian L. Mueller

Inventor： Shumin Wang ,  Brian L. Mueller

IPC: H01L21302

CPC classification number: B24B37/11 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition comprising an oxidizing agent and at least one solid catalyst, the composition being useful when combined with an abrasive or with an abrasive pad to remove multiple metal layers from a substrate.

Abstract translation: 一种化学机械抛光组合物，其包含氧化剂和至少一种固体催化剂，所述组合物在与研磨剂或研磨垫结合时可用于从基底去除多个金属层。

公开(公告)号：US06316366B1

公开(公告)日：2001-11-13

申请号：US09503996

申请日：2000-02-14

Applicant: Vlasta Brusic Kaufman ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Shumin Wang

IPC: H01L21302

CPC classification number: C09G1/02

Abstract: A chemical mechanical polishing slurry precursor comprising urea, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry precursor to prepare a chemical mechanical polishing slurry with a first oxidizer and thereafter using the slurry to remove titanium, titanium nitride, and an aluminum alloy containing layers from a substrate.

Abstract translation: 一种包含尿素，第二氧化剂，有机酸和研磨剂的化学机械抛光浆料前体，以及使用化学机械抛光浆料前体用第一氧化剂制备化学机械抛光浆料的方法，然后使用浆料除去 钛，氮化钛和含有层的铝合金。

公开(公告)号：US6126853A

公开(公告)日：2000-10-03

申请号：US891649

申请日：1997-07-11

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: C09G1/02 ,  C23F3/00 ,  C23F3/06 ,  H01L21/321 ,  H01L21/302

CPC classification number: C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

公开(公告)号：US20150024223A1

公开(公告)日：2015-01-22

申请号：US14362130

申请日：2012-04-06

Applicant: Shumin Wang

Inventor： Shumin Wang

IPC: C30B19/12 ,  C30B29/68 ,  C30B25/06 ,  C30B29/40 ,  C30B23/02 ,  C30B25/18

CPC classification number: C30B19/12 ,  C30B23/025 ,  C30B25/06 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02667 ,  Y10T428/12681 ,  Y10T428/2495 ,  Y10T428/31678

Abstract: The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality.

Abstract translation: 本发明提供了一种使用低粘度材料的单片整体晶格失配晶体模板及其制备方法，所述晶体模板的制备方法包括：提供具有第一晶格常数的第一晶体层; 在第一晶体层上生长缓冲层; 低于缓冲层的熔点，通过顺序地进行第二晶体层的生长过程和缓冲层上的第一模板层的生长过程，或通过直接生长模板层，生长第二晶体层和模板层 在缓冲层上执行第一模板层生长过程; 熔融并将缓冲层转化为非晶状态，在高于缓冲层的玻璃化转变温度的生长温度下通过第一模板层生长工艺生长的模板层上进行第二模板层生长过程，依次生长模板层直到 模板层的格子完全放松。 与现有技术相比，本发明具有制备简单，在一个基板上形成各种晶格常数材料组合和低位错密度，高晶体质量的优点。