公开(公告)号：US20050152073A1

公开(公告)日：2005-07-14

申请号：US11030787

申请日：2005-01-07

Applicant: Charles Black ,  Stephen Gates ,  Christopher Murray ,  Robert Sandstrom

Inventor： Charles Black ,  Stephen Gates ,  Christopher Murray ,  Robert Sandstrom

IPC: G01R33/09 ,  G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  G01R33/093 ,  Y10T29/49032 ,  Y10T29/49069 ,  Y10T29/49155 ,  Y10T428/25 ,  Y10T428/265

Abstract: A magnetic-field sensor device comprises at least two electrodes; an insulating layer separating the at least two electrodes; at least one layer of chemically-synthesized magnetic nanoparticles disposed at or above a level with the insulating layer, and disposed between the at least two electrodes; and an organic spacer surrounding each of the chemically-synthesized magnetic nanoparticles. A deviation between diameters of different ones of the nanoparticles is less than 15%. Moreover, the chemically-synthesized magnetic nanoparticles range in size between 2 nm and 20 nm in diameter.

Abstract translation: 磁场传感器装置包括至少两个电极; 分离所述至少两个电极的绝缘层; 至少一层化学合成的磁性纳米颗粒设置在与绝缘层的水平面上或之上，并且设置在至少两个电极之间; 以及围绕每个化学合成的磁性纳米颗粒的有机间隔物。 不同纳米颗粒的直径之间的偏差小于15％。 此外，化学合成的磁性纳米粒子的尺寸范围在2nm和20nm之间。

公开(公告)号：US20050087876A1

公开(公告)日：2005-04-28

申请号：US10627794

申请日：2003-07-25

Applicant: Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

Inventor： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

Abstract translation: 本发明包括一种互连结构，其中包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层，其中陶瓷扩散阻挡层具有组成为N 其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 <= x <= 0.9， 对于v + w + x + y + z = 1，0 <= y <= 0.7,0.01 <= z <= 0.8。 陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。 本发明还包括用于形成本发明的陶瓷扩散阻挡层的方法，该方法包括沉积具有组合物的组合物的聚合物预陶瓷的步骤 其中0.1

公开(公告)号：US5776921A

公开(公告)日：1998-07-07

申请号：US717799

申请日：1996-09-23

Applicant: Stephen Gates ,  Roger M. Loria

Inventor： Stephen Gates ,  Roger M. Loria

IPC: A61K31/59 ,  A61K31/56

CPC classification number: A61K31/568 ,  A61K31/59

Abstract: Androsta-5,7-diene-3.beta., 17.beta.-diol, its esters and ethers and related compounds wherein ring opening of the steroid ring system between carbons 9 and 10 has occurred are active as regulators of immune response and cell proliferation and differentiation.

Abstract translation: 雄激素-5,7-二烯-3β，17β-二醇，其酯和醚及其相关化合物，其中已经发生碳9和10之间的类固醇环体系的开环作为免疫应答和细胞增殖和分化的调节剂是有活性的 。

公开(公告)号：US07607907B2

公开(公告)日：2009-10-27

申请号：US10940546

申请日：2004-09-14

Applicant: Adrian Comillus Shorten ,  Christopher J. McCrindle ,  Brian Eric Knell ,  Stephen Gates

Inventor： Adrian Comillus Shorten ,  Christopher J. McCrindle ,  Brian Eric Knell ,  Stephen Gates

IPC: F04C2/344

CPC classification number: F01C21/0827 ,  F04C2/3445

Abstract: A roller vane pump for fluid includes a carrier which is rotatable in a housing about an axis of rotation, the carrier carrying a plurality of roller vanes which are each received in a respective slot which extends inwardly of a periphery of the carrier and permits the roller to move inwardly and outwardly in use, the housing surrounding the carrier, pumping chambers being formed between the rollers, the carrier and the housing, the rollers engaging with the housing and moving inwardly and outwardly of their respective slots as the carrier rotates, in response to the configuration of the housing so that the pumping chambers change in volume as the carrier rotates, to effect pumping of the fluid, from an inlet to an outlet of the pump, and wherein in each of the slots in which the rollers are received, there is provided a restrictor element which restricts movement of the roller inwardly of its respective slot.

Abstract translation: 用于流体的滚子叶片泵包括可围绕旋转轴线在壳体中旋转的载体，所述载体承载多个辊叶片，每个叶片各自容纳在相对于所述载体周边的内侧延伸的槽中，并允许所述滚筒 在使用中向内和向外移动，围绕载体的壳体，在辊，载体和壳体之间形成的泵送室，当载体旋转时，滚子与壳体接合并向其内侧和外侧移动，作为响应 关于壳体的构造，使得当载体旋转时，泵送室的体积变化，以实现从泵的入口到出口的流体的泵送，并且其中在每个容纳辊的槽中， 提供了一种限制器，其限制了其相应槽的内部的运动。

公开(公告)号：US20080044668A1

公开(公告)日：2008-02-21

申请号：US11034479

申请日：2005-01-13

Applicant: Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

Inventor： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

IPC: B32B9/04 ,  B32B13/04

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

Abstract translation: 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不大于2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US20080026203A1

公开(公告)日：2008-01-31

申请号：US11870263

申请日：2007-10-10

Applicant: Stephen Gates ,  Alfred Grill

Inventor： Stephen Gates ,  Alfred Grill

IPC: B32B3/26 ,  C04B41/50

CPC classification number: H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation. Electronic structures including the multiphase, ultra low k film are also disclosed.

Abstract translation: 本发明提供了一种多相超低k膜，其具有改进的弹性模量和硬度以及其形成方法。 多相超低k电介质膜包括Si，C，O和H的原子，介电常数约为2.4或更小，纳米孔或空隙，弹性模量约5或更大，硬度约为0.7或更大 。 优选的多相超低k电介质膜包括Si，C，O和H的原子，具有约2.2或更小的介电常数，纳米孔或空隙，约3或更大的弹性模量和约0.3的硬度或 更大 多相超低k膜通过等离子体增强化学气相沉积制备，其中使用以下替代物之一：至少一种包含含有至少三个Si-O键的硅氧烷分子的前体气体; 或包含对电子束辐射敏感的含有反应性基团的分子的至少一种前体气体。 还公开了包括多相超低k膜的电子结构。

公开(公告)号：US20070161256A1

公开(公告)日：2007-07-12

申请号：US11329560

申请日：2006-01-11

Applicant: Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

Inventor： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC: H01L21/31

CPC classification number: H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

Abstract: A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

Abstract translation: 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

公开(公告)号：US20060189133A1

公开(公告)日：2006-08-24

申请号：US11063152

申请日：2005-02-22

Applicant: Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

Inventor： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/48

CPC classification number: H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.

Abstract translation: 本发明涉及改进单镶嵌型或双镶嵌型互连结构的制造方法，其中在制造之后金属线之间没有硬掩模保持或导电性问题。 本发明的方法包括化学机械抛光和紫外线曝光或化学修复处理的至少步骤，这些步骤提高了形成的互连结构的可靠性。 本发明还涉及一种互连结构，其包括SiCOH型的多孔超低k电介质，其中其表面层被修饰以形成具有密度梯度和C含量梯度的梯度层。

公开(公告)号：US20060154086A1

公开(公告)日：2006-07-13

申请号：US11034480

申请日：2005-01-13

Applicant: Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

Inventor： Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

IPC: B32B17/06 ,  B32B9/00 ,  H01L21/302

CPC classification number: H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

Abstract: Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

Abstract translation: 具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。 本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。 后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。

公开(公告)号：US20060055004A1

公开(公告)日：2006-03-16

申请号：US11268106

申请日：2005-11-07

Applicant: Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

Inventor： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

IPC: H01L23/58

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

Abstract translation: 包含Si，C，O和H元素的介电材料具有机械性能（拉伸应力，弹性模量，硬度内聚强度，水中裂纹速度）的特定值，这导致稳定的超低k膜，其不被水蒸气降解 或集成处理。 电介质材料具有约2.8或更小的介电常数，小于45MPa的拉伸应力，约2至约15GPa的弹性模量和约0.2至约2GPa的硬度。 还提供了包括本发明的电介质材料的电子结构以及制造介电材料的各种方法。