摘要:
A semiconductor device including a transistor and a method of forming thereof are provided. The semiconductor device comprises a metal gate electrode. A lower portion of the metal gate electrode fills a channel trench formed at a predetermined region of a substrate, and an upper portion of the metal gate electrode protrudes on the substrate. A gate insulating layer is interposed between inner sidewalls and a bottom surface of the channel trench, and the metal gate electrode. Source/drain regions are formed at the substrate in both sides of the metal gate electrode.
摘要:
A semiconductor chip package mounting structure may mount a semiconductor chip package on a module board by implementing a flexible circuit board. The semiconductor chip package may be electrically connected to a first surface of the flexible circuit board and the module board may be electrically connected to a second surface of the flexible circuit board.
摘要:
In an example embodiment, a printed circuit board (PCB) includes a package substrate having a plurality of first solder balls and a first resist layer formed on the first side. The first resist layer may have a plurality of first elliptical openings. Each of the first elliptical openings exposes a portion of one of the solder ball lands, respectively. In a related example embodiment, the first solder ball lands may be disposed along at least one direction of the first side and long axis of the first elliptical openings are disposed having a declination of 30° to 60° with respect to the at least one direction. In yet another example embodiment, the PCB may also have a plurality of second solder ball lands formed on a second side of the package substrate, along with a second resist layer formed on the second side of the package and including a plurality of second elliptical openings exposing a portion of one of the second solder ball lands, respectively. The PCB may also include a mounting region for a semiconductor chip located on the second side of the package substrate.
摘要:
There is provided an apparatus for measuring an angle distribution of neutral beams. The apparatus includes a Faraday cup assembly having an opening disposed in a trajectory path of neutral beams supplied from a neutral beam source and receives neutral beam particles, a secondary electron emission plate disposed in the Faraday cup such that the neutral beam particles passing through the opening collide with it to generate secondary electron emissions, and a secondary electron collector disposed to collect the secondary electron emissions.
摘要:
A computer simulation method for a semiconductor device manufacturing process, includes: a first step for forming an initial section of the material with only open cells exposed to the growth or etching among the cells; a second step for inputting information including growth or etching points into each open cell; a third step for computing a movement speed for the growth or etching points; a fourth step for moving the growth or etching points for a time determined according to the movement speed; and a fifth step for forming a new etching section by re-arranging the open cells exposed to the growth or etching, after moving the growth or etching points, the second to fifth steps being repeatedly performed on the re-arranged open cells until the sum of the predetermined time reaches the time (T).