摘要:
A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.
摘要:
A method for writing a pattern on a surface of an object by a focused electron beam with a minimized distortion of the electron beam comprises the steps of dividing the surface of the object into a plurality of parallel bands, moving the object in a direction perpendicular to the bands with a predetermined speed, achieving an exposure of the device pattern on an individual, band by band basis while moving the object with the predetermined speed. The predetermine speed is optimized with respect to an exposure interval representing a time interval in which the exposure of the band is possible. In order to minimize the distortion of the electron beam, the timing of the exposure of each band in each exposure interval is adjusted by (a) detecting a critical timing pattern that determines the optimized moving speed, (b) shifting the corresponding timing of exposure for each band, starting from the band immediately before the critical timing pattern and proceeding in a direction to the first band, such that the timing of exposure is shifted toward the center of the exposure interval to the extent that the exposure of any given band does not overlap the exposure of the next preceding band, and (c) repeating the step (b) for each of the remaining bands of the plurality of bands until the respective timing of exposure of each band reaches the center of the corresponding exposure interval.
摘要:
A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.
摘要:
A stage device for use in a vacuum includes a frame-shaped movable stage having a sample mounting surface, a fixed stage surrounded by the movable stage, an air bearing to float the movable stage by supplying gas to a gap between the stages, a pressure regulator to regulate a pressure of the gas, a differential pumping portion to prevent the gas from flowing outside the gap, and a controller. The controller moves the movable stage within a predetermined range under a pressure in the differential pumping portion set equal to that for movable stage in use when setting a floating height of the movable stage lower than that for movable stage in use, and under the pressure in the differential pumping portion set higher than that for movable stage in use when setting the floating height of the movable stage equal to that for movable stage in use.
摘要:
A stage device for use in a vacuum includes a frame-shaped movable stage having a sample mounting surface, a fixed stage surrounded by the movable stage, an air bearing to float the movable stage by supplying gas to a gap between the stages, a pressure regulator to regulate a pressure of the gas, a differential pumping portion to prevent the gas from flowing outside the gap, and a controller. The controller moves the movable stage within a predetermined range under a pressure in the differential pumping portion set equal to that for movable stage in use when setting a floating height of the movable stage lower than that for movable stage in use, and under the pressure in the differential pumping portion set higher than that for movable stage in use when setting the floating height of the movable stage equal to that for movable stage in use.
摘要:
A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要:
The present invention relates to an exposure method of a multi-beam type in which a stage mounting a sample to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the sample by deflecting the charged-particle beams by a main deflector and a sub deflector. Patterns to be drawn are divided into pattern data on a cell stripe basis which corresponds to an area which can be exposed when the sub deflector scans the charged-particle beams one time. The pattern data on the cell stripe basis is stored into a memory. Then, position data indicative of cell stripes is stored, in an exposure sequence, together with address information concerning the memory in which the pattern data is stored. The deflection amount data relating to the main deflector and the sub deflector is calculated from the position data. Patterns are drawn on the wafer by using the pattern data and the deflection amount data.
摘要:
A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要:
By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.
摘要:
To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.