公开(公告)号：US08551802B2

公开(公告)日：2013-10-08

申请号：US13204827

申请日：2011-09-12

Applicant: Haifan Liang ,  Jeroen Van Duren ,  Zhi-Wen Sun

Inventor： Haifan Liang ,  Jeroen Van Duren ,  Zhi-Wen Sun

IPC: H01L21/00

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Abstract translation: 使用激光退火技术形成铜铟镓（硫化物）硒化物（CIGS）太阳能电池，碲化镉（CdTe）太阳能电池和铜锌锡（硫化物）硒化物（CZTS））太阳能电池的方法来使吸收体和/或 缓冲层。 激光退火可能导致更好的结晶度，更低的表面粗糙度，更大的晶粒尺寸，更好的组成均匀性，复合中心的减少和增加的致密化。 另外，激光退火可能导致形成非平衡相，有利的结果。

公开(公告)号：US20130230962A1

公开(公告)日：2013-09-05

申请号：US13602637

申请日：2012-09-04

Applicant: Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

Abstract: Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pretreating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

Abstract translation: 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

公开(公告)号：US08492189B2

公开(公告)日：2013-07-23

申请号：US13460333

申请日：2012-04-30

Applicant: Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

Inventor： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

IPC: H01L21/00

CPC classification number: B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00702 ,  B01J2219/00754 ,  B01J2219/00756 ,  C40B40/18 ,  C40B60/14 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

Abstract: Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing.

Abstract translation: 本发明的实施例包括通过组合方法改进形成纹理TCO膜的工艺的方法。 组合方法可以包括通过物理气相沉积或溅射沉积TCO，退火TCO，以及蚀刻TCO，其中组合进行沉积，退火或蚀刻中的至少一个。 本发明的实施例还包括基于组合测试的结果形成TCO的改进方法。

公开(公告)号：US08486282B2

公开(公告)日：2013-07-16

申请号：US12729199

申请日：2010-03-22

Applicant: Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Minh Anh Nguyen ,  Nikhil Kalyankar

Inventor： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Minh Anh Nguyen ,  Nikhil Kalyankar

IPC: H01B13/00 ,  B31D3/00

CPC classification number: C23C14/5873 ,  C03C17/36 ,  C03C17/3678 ,  C03C2217/944 ,  C03C2218/32 ,  C09K13/04 ,  C23C14/086 ,  H01L31/02366 ,  Y02E10/50

Abstract: Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.

Abstract translation: 需要薄膜光伏（TFPV）太阳能电池的透明导电氧化物（TCO）前触点的表面纹理来增强TFPV太阳能电池的光捕获能力，从而提高太阳能电池效率。 本发明的实施方案描述了用于湿法蚀刻TCO的化学配方和方法。 可以优化配方和方法以根据需要调整TCO的表面纹理。

公开(公告)号：US20130164561A1

公开(公告)日：2013-06-27

申请号：US13338018

申请日：2011-12-27

Applicant: Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Minh Anh Nguyen ,  Zhi-Wen Sun

Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Minh Anh Nguyen ,  Zhi-Wen Sun

IPC: B32B9/00 ,  B05D5/06

CPC classification number: C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/366 ,  C03C2217/21 ,  C03C2217/228 ,  C03C2217/23 ,  C03C2217/26 ,  C03C2217/281

Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.

Abstract translation: 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧化物层。 金属氧化物层包括第一元件，第二元件和第三元件。 在透明基板上形成反射层。 第一元素可以包括锡或锌。 第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。 金属氧化物层也可以包括氮。

公开(公告)号：US20120238050A1

公开(公告)日：2012-09-20

申请号：US13460333

申请日：2012-04-30

Applicant: Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

Inventor： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

IPC: H01L31/18

CPC classification number: B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00702 ,  B01J2219/00754 ,  B01J2219/00756 ,  C40B40/18 ,  C40B60/14 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

Abstract: Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing.

Abstract translation: 本发明的实施例包括通过组合方法改进形成纹理TCO膜的工艺的方法。 组合方法可以包括通过物理气相沉积或溅射沉积TCO，退火TCO，以及蚀刻TCO，其中组合进行沉积，退火或蚀刻中的至少一个。 本发明的实施例还包括基于组合测试的结果形成TCO的改进方法。

公开(公告)号：US07799740B2

公开(公告)日：2010-09-21

申请号：US12041540

申请日：2008-03-03

Applicant: Zhi-Wen Sun ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Tony Chiang

IPC: C40B50/08

CPC classification number: H01L21/02074 ,  B01J19/0046 ,  B01J2219/00527 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00603 ,  B01J2219/00693 ,  B01J2219/00698 ,  B01J2219/00702 ,  B01J2219/0075 ,  B01J2219/00756 ,  H01L21/67051

Abstract: Method for monitoring and controlling a combinatorial process are presenting including: receiving a substrate; executing the combinatorial process, wherein the combinatorial process includes an in-line chemical preparation; analyzing the in-line chemical preparation for conformance with a corresponding in-line chemical preparation parameter using an in-line chemical analysis; and if the in-line chemical preparation is out of conformance with the corresponding in-line chemical preparation parameter, adjusting the in-line chemical preparation to conform with the corresponding in-line chemical preparation parameter utilizing a replenishing chemical preparation. In some embodiments, methods further include: performing a post-chemical mechanical planarization (CMP) clean before executing the combinatorial process, wherein the combinatorial process is a pre-clean; and depositing a capping layer after the pre-clean.

Abstract translation: 提出了一种用于监测和控制组合过程的方法，包括：接收衬底; 执行组合过程，其中组合过程包括在线化学制剂; 使用在线化学分析分析在线化学制剂以符合相应的在线化学制剂参数; 如果在线化学制剂不符合相应的在线化学品制备参数，则使用补充化学制剂调整在线化学制剂以符合相应的在线化学制剂参数。 在一些实施例中，方法还包括：在执行组合过程之前执行后化学机械平面化（CMP）清洁，其中组合过程是预清洁的; 以及在预清洁之后沉积覆盖层。

公开(公告)号：US20100203731A1

公开(公告)日：2010-08-12

申请号：US12368110

申请日：2009-02-09

Applicant: Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

Inventor： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC: H01L21/306 ,  C09D1/00 ,  H01L21/34

CPC classification number: H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

Abstract translation: 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US07704789B2

公开(公告)日：2010-04-27

申请号：US11702967

申请日：2007-02-05

Applicant: Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

Inventor： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

IPC: H01L21/00

CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US20090163383A1

公开(公告)日：2009-06-25

申请号：US12041540

申请日：2008-03-03

Applicant: Zhi-Wen Sun ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Tony Chiang

IPC: C40B50/08

CPC classification number: H01L21/02074 ,  B01J19/0046 ,  B01J2219/00527 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00603 ,  B01J2219/00693 ,  B01J2219/00698 ,  B01J2219/00702 ,  B01J2219/0075 ,  B01J2219/00756 ,  H01L21/67051

Abstract: Method for monitoring and controlling a combinatorial process are presenting including: receiving a substrate; executing the combinatorial process, wherein the combinatorial process includes an in-line chemical preparation; analyzing the in-line chemical preparation for conformance with a corresponding in-line chemical preparation parameter using an in-line chemical analysis; and if the in-line chemical preparation is out of conformance with the corresponding in-line chemical preparation parameter, adjusting the in-line chemical preparation to conform with the corresponding in-line chemical preparation parameter utilizing a replenishing chemical preparation. In some embodiments, methods further include: performing a post-chemical mechanical planarization (CMP) clean before executing the combinatorial process, wherein the combinatorial process is a pre-clean; and depositing a capping layer after the pre-clean.

Abstract translation: 提出了一种用于监测和控制组合过程的方法，包括：接收衬底; 执行组合过程，其中组合过程包括在线化学制剂; 使用在线化学分析分析在线化学制剂以符合相应的在线化学制剂参数; 如果在线化学制剂不符合相应的在线化学品制备参数，则使用补充化学制剂调整在线化学制剂以符合相应的在线化学制剂参数。 在一些实施例中，方法还包括：在执行组合过程之前执行后化学机械平面化（CMP）清洁，其中组合过程是预清洁的; 以及在预清洁之后沉积覆盖层。