Abstract:
A system and method for sequential single-sided CMP processing of opposite facing surfaces of a silicon carbide (SiC) substrate are disclosed. A method includes urging a first surface of a substrate against one of plurality of polishing pads, wherein the plurality of polishing pads are disposed on corresponding ones of a plurality of rotatable polishing platens. The method includes transferring, using the first side of the end effector, the substrate from the substrate carrier loading station to a substrate alignment station. The method includes transferring, using the first side of the end effector, the substrate from the substrate alignment station to a substrate carrier loading station. The method includes urging a second surface of the substrate against one of the plurality of polishing platens.
Abstract:
Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module having a platen, and a platen temperature control system. The platen temperature control system includes a PID controller, a fluid controller, and a heat exchanger. The flow controller is configured to control an amount of fluid provided from the heat exchanger to a channels of the platen in response to instructions provided by the PID controller.
Abstract:
Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
Abstract:
Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the cooling gas to an immediate environment, such as a cleanroom or a minienvironment.
Abstract:
A retaining ring for a polishing process is disclosed. The retaining ring includes a body comprising an upper portion and a lower portion, and a sacrificial surface disposed on the lower portion, the sacrificial surface comprising a negative tapered surface having a taper height that is about 0.0003 inches to about 0.00015 inches.
Abstract:
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.