公开(公告)号：US09748121B2

公开(公告)日：2017-08-29

申请号：US14175459

申请日：2014-02-07

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Mehmet Tugrul Samir ,  Paul Brillhart

IPC: H01L21/00 ,  H01L21/67 ,  C23C16/44 ,  C23C16/46

CPC classification number: H01L21/67115 ,  C23C16/4411 ,  C23C16/463

Abstract: Embodiments described herein generally relate to apparatus for processing substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps are positioned to provide radiant energy through an optically transparent window to a substrate positioned on the substrate support. The plurality of lamps are positioned in a lamp housing. A cooling channel is formed in the lamp housing. A surface of the lamp housing is spaced a distance from the optically transparent window to form a gap therebetween. The gap functions as a fluid channel and is adapted to contain a fluid therein to facilitate cooling of the optically transparent window. Turbulence inducing features, such as openings, formed in the surface of the lamp housing induce a turbulent flow of the cooling fluid, thus improving heat transfer between the optically transparent window and the lamp housing.

公开(公告)号：US09553002B2

公开(公告)日：2017-01-24

申请号：US14259898

申请日：2014-04-23

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Shu-Kwan Lau

IPC: H01L23/48 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/67017 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  H01L21/67115 ,  H01L21/67253 ,  Y10T137/87265

Abstract: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.

Abstract translation: 本公开的实施例提供了一种衬套组件，其包括多个单独分离的气体通道。 衬套组件使得能够处理正在处理的衬底上的流动参数（例如速度，密度，方向和空间位置）的可维护性。 正在处理的衬底上的处理气体可以根据本公开的实施例专门针对具有衬套组件的各个工艺进行定制。

公开(公告)号：US09532401B2

公开(公告)日：2016-12-27

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: F27D5/00 ,  C23C14/00 ,  H01L21/302 ,  H05B1/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

公开(公告)号：US09230837B2

公开(公告)日：2016-01-05

申请号：US14292300

申请日：2014-05-30

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: H01L21/00 ,  H05B6/66 ,  B05C11/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括具有圆顶和底板的真空室。 衬底支撑件设置在真空室内。 多个热灯布置在灯头中并且靠近真空室的地板定位。 反射器靠近穹顶设置，其中反射器和穹顶一起限定了热控制空间。 基板处理装置还包括耦合到热灯的多个电源和用于调节电源以控制真空室中的温度的控制器。

公开(公告)号：USD717746S1

公开(公告)日：2014-11-18

申请号：US29471943

申请日：2013-11-06

Applicant: Applied Materials, Inc.

Designer： Shu-Kwan Lau ,  Mehmet Tugrul Samir

公开(公告)号：USD716240S1

公开(公告)日：2014-10-28

申请号：US29472055

申请日：2013-11-07

Applicant: Applied Materials, Inc.

Designer： Shu-Kwan Lau ,  Mehmet Tugrul Samir ,  Anzhong Chang ,  Paul Brillhart ,  Richard O. Collins

公开(公告)号：US20140263268A1

公开(公告)日：2014-09-18

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: H05B3/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

公开(公告)号：US10964512B2

公开(公告)日：2021-03-30

申请号：US15942051

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  C23C16/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10699921B2

公开(公告)日：2020-06-30

申请号：US16448323

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/458 ,  H01L21/285 ,  H01L21/67 ,  H01L21/311 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US20190333786A1

公开(公告)日：2019-10-31

申请号：US16448323

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/67 ,  H01L21/311 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.