公开(公告)号：US09580835B2

公开(公告)日：2017-02-28

申请号：US14987446

申请日：2016-01-04

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: C30B25/10 ,  H01L21/67 ,  H01L21/02 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16 ,  G01J5/10 ,  H01L21/66

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract translation: 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US20220093428A1

公开(公告)日：2022-03-24

申请号：US17026905

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Bruce E. Adams ,  Samuel C. Howells ,  Martin A. Hilkene ,  Jose Antonio Marin

IPC: H01L21/67 ,  H01J37/32 ,  H01J37/244 ,  C23C8/10 ,  C23C8/36

Abstract: Semiconductor processing systems are described to measure levels of atomic oxygen using an atomic oxygen sensor positioned within a substrate processing region of a substrate processing chamber. The processing systems may include a semiconductor chamber that has a chamber body which defines a substrate processing region. The processing chamber may also include a substrate support positioned within the substrate processing region. The atomic oxygen sensor may be positioned proximate to the substrate support in the substrate processing region of the chamber. Also described are semiconductor processing methods that include detecting a concentration of atomic oxygen in the substrate processing region with an atomic oxygen sensor positioned in the semiconductor processing chamber. The atomic oxygen sensor may include at least one electrode comprising a material selectively permeable to atomic oxygen over molecular oxygen, and may further include a solid electrolyte that selectively conducts atomic oxygen ions.

公开(公告)号：US10077508B2

公开(公告)日：2018-09-18

申请号：US15415982

申请日：2017-01-26

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: C30B25/10 ,  C30B25/08 ,  C30B25/16 ,  C30B25/12 ,  C23C16/458 ,  C23C16/48 ,  C23C16/52 ,  G01J5/10 ,  G01J5/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

公开(公告)号：US10529541B2

公开(公告)日：2020-01-07

申请号：US15462507

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

IPC: H01J37/32

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

公开(公告)号：US09230837B2

公开(公告)日：2016-01-05

申请号：US14292300

申请日：2014-05-30

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: H01L21/00 ,  H05B6/66 ,  B05C11/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括具有圆顶和底板的真空室。 衬底支撑件设置在真空室内。 多个热灯布置在灯头中并且靠近真空室的地板定位。 反射器靠近穹顶设置，其中反射器和穹顶一起限定了热控制空间。 基板处理装置还包括耦合到热灯的多个电源和用于调节电源以控制真空室中的温度的控制器。

公开(公告)号：US11450509B2

公开(公告)日：2022-09-20

申请号：US16735494

申请日：2020-01-06

Applicant: Applied Materials, Inc.

Inventor： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

公开(公告)号：US20170365288A1

公开(公告)日：2017-12-21

申请号：US15627124

申请日：2017-06-19

Applicant: Applied Materials, Inc.

Inventor： Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel J. Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

IPC: G11B5/82 ,  C23C16/00 ,  C23F1/00 ,  H01L21/673 ,  G11B5/855 ,  G11B5/84 ,  H01L21/677 ,  H01L21/687 ,  C23C14/48 ,  C23C14/50

CPC classification number: G11B5/82 ,  C23C14/48 ,  C23C14/50 ,  C23C16/00 ,  C23F1/00 ,  G11B5/84 ,  G11B5/855 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687

Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.