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    Methods for forming protective coatings containing crystallized aluminum oxide
    33.
    发明授权
    Methods for forming protective coatings containing crystallized aluminum oxide 有权

    公开(公告)号：US11466364B2

    公开(公告)日：2022-10-11

    申请号：US16670555

    申请日：2019-10-31

    Applicant: Applied Materials, Inc.

    Inventor： Kenichi Ohno ,  Eric H. Liu ,  Sukti Chatterjee ,  Yuriy Melnik ,  Thomas Knisley ,  David Alexander Britz ,  Lance A. Scudder ,  Pravin K. Narwankar

    IPC: C23C16/455 ,  C23C16/02 ,  C23C16/56 ,  C23C16/40

    Abstract: Embodiments of the present disclosure generally relate to protective coatings on substrates and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on a substrate includes depositing a chromium oxide layer containing amorphous chromium oxide on a surface of the substrate during a first vapor deposition process and heating the substrate containing the chromium oxide layer comprising the amorphous chromium oxide to convert at least a portion of the amorphous chromium oxide to crystalline chromium oxide during a first annealing process. The method also includes depositing an aluminum oxide layer containing amorphous aluminum oxide on the chromium oxide layer during a second vapor deposition process and heating the substrate containing the aluminum oxide layer disposed on the chromium oxide layer to convert at least a portion of the amorphous aluminum oxide to crystalline aluminum oxide during a second annealing process.

    Controlled air gap formation
    34.
    发明授权
    Controlled air gap formation 有权
    控制气隙形成

    公开(公告)号：US08921235B2

    公开(公告)日：2014-12-30

    申请号：US13834508

    申请日：2013-03-15

    Applicant: Applied Materials Inc.

    Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

    IPC: H01L21/00 ,  H01L21/20

    CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

    Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

    Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

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