公开(公告)号：US08334547B2

公开(公告)日：2012-12-18

申请号：US12187653

申请日：2008-08-07

申请人： Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L33/00

CPC分类号： H01L31/022491 ,  G02F1/13439 ,  H01J2211/225 ,  H01L51/5234

摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

摘要翻译： 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。 这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

公开(公告)号：US20120228654A1

公开(公告)日：2012-09-13

申请号：US13221326

申请日：2011-08-30

申请人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US20120061712A1

公开(公告)日：2012-03-15

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US20120056232A1

公开(公告)日：2012-03-08

申请号：US13037937

申请日：2011-03-01

申请人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/38 ,  H01L33/42 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括结构体，第一电极层，中间层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。 第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。 中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。 第二电极层电连接到第一半导体层。

公开(公告)号：US20110049556A1

公开(公告)日：2011-03-03

申请号：US12712693

申请日：2010-02-25

申请人： Akira FUJIMOTO ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira FUJIMOTO ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and they penetrate through the metal electrode layer. That metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 本发明提供即使电力增加也能够保持高亮度强度的半导体发光装置，因此该装置适用于照明装置如灯和灯。 该半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，穿过金属电极层。 该金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

公开(公告)号：US07786665B2

公开(公告)日：2010-08-31

申请号：US11319508

申请日：2005-12-29

申请人： Tsutomu Nakanishi ,  Toshiro Hiraoka ,  Akira Fujimoto ,  Koji Asakawa ,  Satoshi Saito

发明人： Tsutomu Nakanishi ,  Toshiro Hiraoka ,  Akira Fujimoto ,  Koji Asakawa ,  Satoshi Saito

IPC分类号： H01L21/00 ,  H01L35/24 ,  H05B33/22 ,  H01L29/08

CPC分类号： H01L51/5275

摘要： An organic electroluminescent device is provided, which includes an emission portion comprising a first electrode and a second electrode and an organic layer sandwiched between the first and second electrodes, and a diffraction grating disposed neighboring on the emission portion, the diffraction grating having first regions and a second region, the first regions comprising a plurality of pair of recessed and projected portions, the plurality of pair of recessed and projected portions being periodically arranged and provided with a primitive translation vector of a direction, the second region comprising an aggregate of the first regions and located parallel with an emission surface of the organic electroluminescent device.

摘要翻译： 提供一种有机电致发光器件，其包括发射部分，其包括第一电极和第二电极以及夹在第一和第二电极之间的有机层，以及围绕发射部分设置的衍射光栅，衍射光栅具有第一区域和 第二区域，所述第一区域包括多个凹入和突出部分，所述多个凹入和突出部分周期性地布置并且设置有方向的原始平移向量，所述第二区域包括所述第一区域的聚集体 区域并且与有机电致发光器件的发射表面平行。

公开(公告)号：US20090176015A1

公开(公告)日：2009-07-09

申请号：US12347187

申请日：2008-12-31

申请人： Tsutomu NAKANISHI ,  Akira Fujimoto ,  Koji Asakawa ,  Takeshi Okino ,  Shinobu Sugimura

发明人： Tsutomu NAKANISHI ,  Akira Fujimoto ,  Koji Asakawa ,  Takeshi Okino ,  Shinobu Sugimura

IPC分类号： B05D5/02 ,  B05C19/00 ,  G02B1/11

CPC分类号： G02B1/118 ,  B81C1/0046 ,  C03C15/00 ,  C03C17/007 ,  C03C17/28 ,  C03C2217/42 ,  C03C2217/77 ,  C03C2218/34 ,  C03C2218/355 ,  Y10T428/24421

摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.

摘要翻译： 本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。 此外，本发明还提供了通过该方法形成的抗反射结构。 在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。 基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。 基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。 也可以通过使用压模的纳米压印方法制造抗反射结构。 通过使用根据上述形成方法制造的母版形成压模。

公开(公告)号：US20090079322A1

公开(公告)日：2009-03-26

申请号：US12187653

申请日：2008-08-07

申请人： Eishi TSUTSUMI ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01J1/54 ,  H01B13/00 ,  B05D5/12

CPC分类号： H01L31/022491 ,  G02F1/13439 ,  H01J2211/225 ,  H01L51/5234

摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

摘要翻译： 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续，90％以上的金属部分以不超过可见波长的1/3的直线长度线性地继续直线而不断裂，用于380nm至780nm。 这些开口的平均直径在入射光的波长的10nm以上且1/3以下的范围内，开口的中心之间的间距不小于平均直径，不大于1/2 的入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

公开(公告)号：US07179672B2

公开(公告)日：2007-02-20

申请号：US10976987

申请日：2004-11-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L21/0271

摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

摘要翻译： 在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。 本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。 这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

公开(公告)号：US20060175962A1

公开(公告)日：2006-08-10

申请号：US11234189

申请日：2005-09-26

申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

IPC分类号： H05B33/02

CPC分类号： H01L51/5262 ,  H01L27/3211

摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional diffraction grating having two grating periods.

摘要翻译： 在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个光栅周期的二维衍射光栅。