摘要:
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
摘要:
A vehicle generation controlling system for saving fuel includes a battery supplying power to electric components of a vehicle, a generator generating power by using rotational force of an engine and supplying the generated power to the battery and the electric components, and an ECU determining whether generation control is prevented by monitoring vehicle information on the vehicle and operational information on an operation of an electric product of a cooling system among the electric components and controlling the generator to prevent the generation control according to the determination. As a result, the generation control is performed based on whether an electric product of a cooling system is actuated and vehicle information on the vehicle to thereby prevent cooling performance from being deteriorated due to the generation control.
摘要:
A method of determining an Idle Stop and Go (ISG) ventilation condition may include an ISG restriction early step that calculates an expected external air temperature through modeling using information acquired from a vehicle and execute an ISG logic to determine whether ISG entrance is possible based on a current ventilation condition of the vehicle, an ISG restriction proceeding step that detects an voltage of an air-conditioning system, an ISG restriction ascertaining step that determines whether an ISG entrance condition is satisfied, wherein the ISG entrance condition includes comparing the expected external air temperature through modeling with a specific temperature and the voltage of the air-conditioning system with a specific voltage, and an ISG entrance step that controls an engine by performing the ISG entrance when the ISG entrance condition is satisfied.
摘要:
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
摘要:
The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
摘要:
A navigation device and a method of operating the same are provided. Further, a method of operating a navigation system including a navigation device, a data server and an electronic device is provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.
摘要:
The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
摘要:
Provided is a method of manufacturing a sensor structure, where vertically-well-aligned nanotubes are formed and the sensor structure having an excellent performance can be manufactured at the room temperature at low cost by using the nanotubes. The method of manufacturing a sensor structure includes: (a) forming a lower electrode on a substrate; (b) forming an organic template having a pore structure on the lower electrode; (c) forming a metal oxide thin film in the organic template; (d) forming a metal oxide nanotube structure, in which nanotubes are vertically aligned and upper portions thereof are connected to each other, by removing the organic template through a dry etching method; and (e) forming an upper electrode on the upper portions of the nanotubes.
摘要:
An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is characterized as MNx, where M is one of W, Re, Zr, and Hf, and x is in the range of about 0.7 to about 1.5. Preferably the layer is of WNx, and x is about 0.9. Varying the nitrogen concentration in the nitride layer permits integration of different FET characteristics on the same chip. In particular, varying x in the WNx layer permits adjustment of the threshold voltage in the different FETs. The polysilicon depletion effect is substantially reduced, and the gate structure can be made thermally stable up to about 1000° C.
摘要:
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.