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    Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
    31.
    发明申请
    Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
    使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法

    公开(公告)号：US20080020574A1

    公开(公告)日：2008-01-24

    申请号：US11487999

    申请日：2006-07-18

    申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

    IPC分类号： C23F1/00 ,  H01L21/302 ,  C23C16/00

    CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

    摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

    摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

    Method and apparatus to detect fault conditions of plasma processing reactor
    32.
    发明申请
    Method and apparatus to detect fault conditions of plasma processing reactor 有权
    检测等离子体处理反应堆故障状况的方法和装置

    公开(公告)号：US20070284246A1

    公开(公告)日：2007-12-13

    申请号：US11447946

    申请日：2006-06-07

    申请人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

    发明人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

    IPC分类号： C23C14/00

    CPC分类号： C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

    摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

    摘要翻译： 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

    Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
    33.
    发明授权
    Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift 有权
    用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件

    公开(公告)号：US07244336B2

    公开(公告)日：2007-07-17

    申请号：US10736666

    申请日：2003-12-17

    申请人： Andreas Fischer ,  Peter Loewenhardt

    发明人： Andreas Fischer ,  Peter Loewenhardt

    IPC分类号： C23F1/00

    CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/67069

    摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.

    摘要翻译： 适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。 组件包括导电下环，陶瓷中间环和上环。 中间环覆盖在下环上并且适于经由下环连接到RF电极。 上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

    Reducing plasma ignition pressure
    34.
    发明授权
    Reducing plasma ignition pressure 有权
    降低等离子体点火压力

    公开(公告)号：US07193173B2

    公开(公告)日：2007-03-20

    申请号：US10883583

    申请日：2004-06-30

    申请人： Mark Wiepking ,  Bradford J. Lyndaker ,  Andras Kuthi ,  Andreas Fischer

    发明人： Mark Wiepking ,  Bradford J. Lyndaker ,  Andras Kuthi ,  Andreas Fischer

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32706

    摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

    摘要翻译： 公开了一种用于处理半导体衬底的等离子体处理系统中的方法。 等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。 该方法包括在等离子体点火步骤中点燃等离子体。 当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。 该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。 基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

    Confined plasma with adjustable electrode area ratio
    35.
    发明申请
    Confined plasma with adjustable electrode area ratio 有权
    密闭等离子体具有可调电极面积比

    公开(公告)号：US20060278340A1

    公开(公告)日：2006-12-14

    申请号：US11152022

    申请日：2005-06-13

    申请人： Andreas Fischer

    发明人： Andreas Fischer

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32623 ,  H01J37/32642

    摘要： A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a first set of confinement rings, a second set of confinement rings, and a ground extension. The top and bottom electrodes, the first and second sets of confinement rings, and the ground extension are all enclosed within the chamber. The first set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a first volume between the bottom electrode and the top electrode. The second set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a second volume between the bottom electrode and the top electrode. The second volume is at least greater than the first volume. A ground extension is adjacent to and surrounds the bottom electrode. The first set of confinement rings and the second set of confinement rings are capable of being raised and lowered to extend into a region above the ground extension.

    摘要翻译： 等离子体反应器包括腔室，底部电极，顶部电极，第一组约束环，第二组约束环和地面延伸部。 顶部和底部电极，第一组和第二组约束环和接地延伸部都被封闭在腔室内。 第一组限制环基本上平行于底部电极和顶部电极并围绕底部电极和顶部电极之间的第一容积。 第二组限制环基本上平行于底部电极和顶部电极并围绕底部电极和顶部电极之间的第二体积。 第二卷至少大于第一卷。 接地延伸部分邻近并包围底部电极。 第一组限制环和第二组限制环能够被升高和降低以延伸到地面延伸部上方的区域中。

    Method for reducing wafer arcing
    37.
    发明授权
    Method for reducing wafer arcing 有权
    降低晶圆电弧的方法

    公开(公告)号：US07026174B2

    公开(公告)日：2006-04-11

    申请号：US10261403

    申请日：2002-09-30

    申请人： Andreas Fischer

    发明人： Andreas Fischer

    IPC分类号： H01L21/66 ,  H01L21/3065 ,  H02N13/00

    CPC分类号： H01L21/67069 ,  H01J2237/0206 ,  H01L21/31116 ,  H01L21/6831

    摘要： A method for reducing wafer damage during an etching process is provided. In one of the many embodiments, the method includes assigning a bias voltage to each of at least one etching process, and generating the assigned bias voltage before initiation of one of the at least one etching process. The method further includes applying the assigned bias voltage to an electrostatic chuck before initiation of one of the at least one etching processes. The assigned bias voltage level reduces wafer arcing.

    摘要翻译： 提供了一种在蚀刻过程中减少晶片损伤的方法。 在许多实施例中的一个实施例中，该方法包括将偏压分配给至少一个蚀刻工艺中的每一个，以及在开始至少一个蚀刻工艺之一之前产生所分配的偏置电压。 该方法还包括在开始至少一个蚀刻工艺之一之前将所分配的偏置电压施加到静电卡盘。 分配的偏置电压电平可降低晶圆电弧。

    Segmented radio frequency electrode apparatus and method for uniformity control
    39.
    发明申请
    Segmented radio frequency electrode apparatus and method for uniformity control 审中-公开
    分段射频电极装置及均匀性控制方法

    公开(公告)号：US20050130620A1

    公开(公告)日：2005-06-16

    申请号：US10735881

    申请日：2003-12-16

    申请人： Andreas Fischer

    发明人： Andreas Fischer

    IPC分类号： H01J37/32 ,  H01L20060101 ,  H04B1/28

    CPC分类号： H01J37/32082 ,  H01J37/32532

    摘要： A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode. At least one dual frequency radio frequency power source outputs RF power at a first frequency and a second frequency. The first frequency and the second frequency are different such that at least one radio frequency switch routes at least the first frequency or the second frequency from the at least one dual frequency source to the first electrode, the second electrode, or the first electrode and the second electrode.

    摘要翻译： 用于等离子体处理的分段射频（RF）电源电极。 电极包括第一电极，围绕第一电极的第二电极和插在第一电极和第二电极之间的电介质材料。 电介质材料将第一电极与第二电极电隔离。 至少一个双频射频功率源以第一频率和第二频率输出RF功率。 第一频率和第二频率是不同的，使得至少一个射频开关至少将第一频率或第二频率从至少一个双频源引导到第一电极，第二电极或第一电极，以及 第二电极。