公开(公告)号：US5466678A

公开(公告)日：1995-11-14

申请号：US211544

申请日：1994-04-07

申请人： Hironori Kawabata ,  Koei Moriguchi ,  Takeshi Endo

发明人： Hironori Kawabata ,  Koei Moriguchi ,  Takeshi Endo

IPC分类号： A61K31/555 ,  A61K31/28 ,  A61K31/70 ,  A61K31/7042 ,  A61K31/7052 ,  A61K31/7076 ,  A61K33/24 ,  A61P35/00 ,  A61P43/00 ,  C07H19/167

CPC分类号： A61K31/70 ,  A61K33/24

摘要： A pharmaceutical composition for use as a nephrotoxicity alleviator for alleviating the nephrotoxicity caused by a drug administered into the living organism, which composition contains S-adenosyl-L-methionine or a salt thereof as an active ingredient is provided. Also provided is a pharmaceutical composition for use as an agent for potentiating the antitumor activity of platinum complex compounds, which composition contains S-adenosyl-L-methionine as an active ingredient.

摘要翻译： PCT No.PCT / JP93 / 01250 Sec。 371日期1994年4月7日 102（e）日期1994年4月7日PCT 1993年9月3日PCT公布。 第WO94 / 05299号公报 日本公报1994年3月17日提供一种用作肾毒性减轻剂的药物组合物，其用于减轻由施用于生物体的药物引起的肾毒性，该组合物含有S-腺苷-L-甲硫氨酸或其盐作为活性成分 。 还提供了用作增强铂络合物化合物的抗肿瘤活性的药剂的组合物，该组合物含有S-腺苷-L-甲硫氨酸作为活性成分。

公开(公告)号：US5118784A

公开(公告)日：1992-06-02

申请号：US653222

申请日：1991-02-08

申请人： Hidetoshi Kubota ,  Yoshimasa Fukuda ,  Hidehi Takebe ,  Takeshi Endo

发明人： Hidetoshi Kubota ,  Yoshimasa Fukuda ,  Hidehi Takebe ,  Takeshi Endo

IPC分类号： C08J5/18 ,  C08G69/08 ,  C08G69/10 ,  C08G69/48 ,  C12P21/02 ,  C12R1/01 ,  D01F6/60

CPC分类号： C08G69/48 ,  C08G69/08 ,  C08G69/10

摘要： Disclosed is a poly-.gamma.-glutamic acid ester comprising recurring units represented by the following formula (A): ##STR1## wherein R represents an ester-forming group, and recurring units represented by the following formula (B): ##STR2## wherein the former units (A) occupy at least 40% and the polymerization degree, that is, the total number of both the units (A) and (B), is at least 1000.

公开(公告)号：US09051293B2

公开(公告)日：2015-06-09

申请号：US14112795

申请日：2012-04-20

申请人： Akitake Nakamura ,  Takeshi Endo

发明人： Akitake Nakamura ,  Takeshi Endo

IPC分类号： C07D331/02

CPC分类号： C07D331/02

摘要： Provided is a method for producing an episulfide compound, the method including a step of thiating epoxy groups of (B) an epoxy compound by a reaction with (C) a thiating agent in the presence of (A) a polyhydric hydroxyl compound having two or more hydroxyl groups.

摘要翻译： 提供了一种环硫化合物的制备方法，该方法包括在（A）具有两个或多个羟基化合物的多羟基化合物的存在下，通过与（C）硫化剂的反应，将（B）环氧化合物的环氧基 更多的羟基。

公开(公告)号：US20130266737A1

公开(公告)日：2013-10-10

申请号：US13557769

申请日：2012-07-25

申请人： Atsushi SUDO ,  Ryoichi Kudoh ,  Kazuya Arima ,  Hiroshi Nakayama ,  Takeshi Endo ,  Andreas Taden ,  Thomas Huver

发明人： Atsushi SUDO ,  Ryoichi Kudoh ,  Kazuya Arima ,  Hiroshi Nakayama ,  Takeshi Endo ,  Andreas Taden ,  Thomas Huver

IPC分类号： C08F4/00 ,  C08L79/04 ,  B05D3/02 ,  C08G73/06

CPC分类号： C08G61/122 ,  C08G59/686 ,  C08G61/123 ,  C08G73/0677 ,  C08L65/00 ,  C08L79/04 ,  C09D165/00 ,  C09D179/04

摘要： The present invention relates to a polymerization catalyst, comprising at least two components, wherein at least one or more of said at least two components are selected from the group of nitrogen containing heterocycles and/or their derivatives and at least one or more of said at least two components is selected from the group of organic sulfur containing acids and/or derivatives of organic sulfur containing acids.

摘要翻译： 本发明涉及一种包含至少两种组分的聚合催化剂，其中所述至少两种组分中的至少一种或多种选自含氮杂环和/或其衍生物的组，以及至少一种或多种所述的 至少两种组分选自有机含硫酸和/或有机含硫酸的衍生物。

公开(公告)号：US08440524B2

公开(公告)日：2013-05-14

申请号：US13030790

申请日：2011-02-18

申请人： Hirokazu Fujiwara ,  Masaki Konishi ,  Jun Kawai ,  Takeo Yamamoto ,  Takeshi Endo ,  Takashi Katsuno ,  Yukihiko Watanabe ,  Narumasa Soejima

发明人： Hirokazu Fujiwara ,  Masaki Konishi ,  Jun Kawai ,  Takeo Yamamoto ,  Takeshi Endo ,  Takashi Katsuno ,  Yukihiko Watanabe ,  Narumasa Soejima

IPC分类号： H01L21/00

CPC分类号： H01L29/7811 ,  C21D1/09 ,  C22F1/10 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/872

摘要： A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.

摘要翻译： 一种半导体器件的制造方法，该半导体器件包括由碳化硅构成的半导体衬底，与衬底的上表面接触的上表面电极和与衬底的下表面接触的下表面电极，该方法包括以下步骤：（ a）在基板的上表面侧上形成上表面结构，（b）在基板的下表面侧形成下表面结构。 步骤（a）包括以下步骤：（a1）在基板的上表面上沉积上表面电极材料层，上表面电极材料层是上表面电极的原料层，（a2）使 上表面电极材料层。 步骤（b）包括以下步骤：（b1）在基板的下表面上沉积下表面电极材料层，下表面电极材料层是下表面电极的原料层，（b2）使 下表面电极材料层用激光器在下表面电极和衬底之间形成欧姆接触。

公开(公告)号：US20120238653A1

公开(公告)日：2012-09-20

申请号：US13442327

申请日：2012-04-09

申请人： Masashi Horikiri ,  Atsushi Sudo ,  Takeshi Endo

发明人： Masashi Horikiri ,  Atsushi Sudo ,  Takeshi Endo

IPC分类号： C07C237/20 ,  C07C231/02 ,  C08L63/02

CPC分类号： C09J11/06 ,  C08G59/44 ,  C08G59/50 ,  C08K5/05 ,  C08K5/07 ,  C08K5/13 ,  C08K5/20 ,  C09J163/00

摘要： A latent curing agent obtained by the reaction of a coumarin compound with an amine.

摘要翻译： 通过香豆素化合物与胺的反应获得的潜在性固化剂。

公开(公告)号：US20120194651A1

公开(公告)日：2012-08-02

申请号：US13200652

申请日：2011-09-28

申请人： Kenta Kanto ,  Seiho Yamashita ,  Takeshi Endo

发明人： Kenta Kanto ,  Seiho Yamashita ,  Takeshi Endo

IPC分类号： H04N13/02

CPC分类号： G01B11/24 ,  G01B11/00 ,  G06T7/571

摘要： [PROBLEMS] To provide a shape measuring apparatus having a configuration which enables the operation for aligning a measuring probe and a candidate object to be simplified when the shape of the candidate object is measured.[MEANS TO SOLVE THE PROBLEMS] A shape measuring apparatus is configured so that an optical probe 20 moves relative to a candidate object, and the three-dimensional shape of the candidate object is measured without contact from information obtained by the optical probe 20. The shape measuring apparatus includes a gantry structure 10 allowing the optical probe 20 to be moved to a predetermined position relative to the candidate object, and a support device 30 allowing the candidate object to be rotated around at least two rotational axes.

摘要翻译： 本发明提供一种形状测量装置，其具有能够在测量候选物体的形状时使测量探针和候选物体对准的操作简化的构造。 解决问题的手段形状测量装置被配置为使得光学探针20相对于候选物体移动，并且测量候选物体的三维形状而不与光学探针20获得的信息接触。 形状测量装置包括允许光学探头20相对于候选物体移动到预定位置的台架结构10，以及允许候选物体围绕至少两个旋转轴线旋转的支撑装置30。

公开(公告)号：US20110262185A1

公开(公告)日：2011-10-27

申请号：US13090977

申请日：2011-04-20

申请人： Takeshi Endo

发明人： Takeshi Endo

IPC分类号： G03G15/04

CPC分类号： G03G15/04072 ,  G03G15/0435 ,  G03G21/1666 ,  G03G2215/0404 ,  G03G2221/1636

摘要： An exposure device includes a mirror to reflect light used for exposure of an object, a holder to hold the mirror, an adhesive that bonds the mirror to the holder and elastically deforms, and an adjusting tool that pushes the mirror to change a direction of the mirror.

摘要翻译： 曝光装置包括用于反射用于物体曝光的光的反射镜，用于保持反射镜的保持器，将反射镜粘合到保持器并弹性变形的粘合剂，以及调节工具，其推动反射镜以改变方向 镜子。

公开(公告)号：US07825017B2

公开(公告)日：2010-11-02

申请号：US12406578

申请日：2009-03-18

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/44 ,  H01L21/441 ,  H01L31/0312 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0611 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/8083 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

摘要翻译： 设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极 并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。 钝化膜具有开口，表面电极通过该开口暴露在外部。 钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

公开(公告)号：US07824995B2

公开(公告)日：2010-11-02

申请号：US12071717

申请日：2008-02-26

申请人： Takeshi Endo ,  Tsuyoshi Yamamoto ,  Eiichi Okuno

发明人： Takeshi Endo ,  Tsuyoshi Yamamoto ,  Eiichi Okuno

IPC分类号： H01L29/72

CPC分类号： H01L29/7828 ,  H01L21/049 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/51 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.

摘要翻译： SiC半导体器件包括：具有主表面的SiC衬底; 衬底上的沟道区; 分别在通道区域的上游侧和下游侧的第一和第二杂质区域; 通过栅极绝缘膜在沟道区上形成栅极。 用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。 沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于2.6×1020cm-3。 界面提供垂直于（0001）取向平面的通道表面。