公开(公告)号：US11584993B2

公开(公告)日：2023-02-21

申请号：US17074035

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

公开(公告)号：US20220245307A1

公开(公告)日：2022-08-04

申请号：US17166965

申请日：2021-02-03

Applicant: Applied Materials, Inc.

Inventor： Prashanth Kothnur ,  Karthik Ramanathan ,  Ajit Balakrishna ,  Kartik Shah ,  Umesh Kelkar ,  Vishwas Pandey ,  Prasoon Shukla ,  Sushil Arun Samant

IPC: G06F30/27 ,  G05B13/02 ,  G05B17/02 ,  H01L21/67 ,  H03H17/02

Abstract: Embodiments described herein include processes for generating a hybrid model for modeling processes in semiconductor processing equipment. In a particular embodiment, method of creating a hybrid machine learning model comprises identifying a first set of cases spanning a first range of process and/or hardware parameters, and running experiments in a lab for the first set of cases. The method may further comprise compiling experimental outputs from the experiments, and running physics based simulations for the first set of cases. In an embodiment, the method may further comprise compiling model outputs from the simulations, and correlating the model outputs with the experimental outputs with a machine learning algorithm to provide the hybrid machine learning model.

公开(公告)号：US11171023B2

公开(公告)日：2021-11-09

申请号：US15288404

申请日：2016-10-07

Applicant: Applied Materials, Inc.

Inventor： Schubert S. Chu ,  Douglas E. Holmgren ,  Kartik Shah ,  Palamurali Gajendra ,  Nyi O. Myo ,  Preetham Rao ,  Kevin Joseph Bautista ,  Zhiyuan Ye ,  Martin A. Hilkene ,  Errol Antonio C. Sanchez ,  Richard O. Collins

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US10995419B2

公开(公告)日：2021-05-04

申请号：US16427812

申请日：2019-05-31

Applicant: Applied Materials, Inc.

Inventor： Brian H. Burrows ,  Ala Moradian ,  Kartik Shah ,  Shu-Kwan Lau

IPC: C30B25/02 ,  C30B25/14 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C30B29/40

Abstract: Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

公开(公告)号：US20190311886A1

公开(公告)日：2019-10-10

申请号：US16380294

申请日：2019-04-10

Applicant: Applied Materials, Inc.

Inventor： Siva Chandrasekar ,  Quoc Truong ,  Dmitry A. Dzilno ,  Avinash Shervegar ,  Jozef Kudela ,  Tsutomu Tanaka ,  Alexander V. Garachtchenko ,  Yanjun Xia ,  Balamurugan Ramasamy ,  Kartik Shah

IPC: H01J37/32 ,  C23C16/511

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side, a first dielectric adjacent a second side of the powered electrode and at least one second dielectric adjacent the first dielectric on a side opposite the first dielectric. The sum of the thicknesses of the first dielectric and each of the second dielectrics is in the range of about 10 mm to about 17 mm.

公开(公告)号：US10132003B2

公开(公告)日：2018-11-20

申请号：US15656457

申请日：2017-07-21

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Surajit Kumar ,  Joseph M. Ranish ,  Zhiyuan Ye ,  Kartik Shah ,  Mehmet Tugrul Samir ,  Errol Antonio C. Sanchez

IPC: C30B25/16 ,  C30B33/02 ,  C23C16/44 ,  C30B25/10 ,  C23C16/46

Abstract: Embodiments disclosed herein generally related to a processing chamber, and more specifically a heat modulator assembly for use in a processing chamber. The heat modulator assembly includes a heat modulator housing and a plurality of heat modulators. The heat modulator housing includes a housing member defining a housing plane, a sidewall, and an annular extension. The sidewall extends perpendicular to the housing plane. The annular extension extends outward from the sidewall. The plurality of heat modulators is positioned in the housing member.

公开(公告)号：US11697875B2

公开(公告)日：2023-07-11

申请号：US16662134

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Tobin Kaufman-Osborn ,  Taewan Kim ,  Hansel Lo

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  B01F23/10 ,  B01F23/19 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F25/421 ,  B01F35/511 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US11586789B2

公开(公告)日：2023-02-21

申请号：US17224545

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC: G06F30/27 ,  G06F30/10

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：US11529592B2

公开(公告)日：2022-12-20

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Lara Hawrylchak ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Sairaju Tallavarjula ,  Kailash Pradhan ,  Rene George ,  Johanes F. Swenberg ,  Stephen Moffatt

IPC: C23C16/455 ,  B01F23/10 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US11515129B2

公开(公告)日：2022-11-29

申请号：US16701986

申请日：2019-12-03

Applicant: Applied Materials, Inc.

Inventor： Elizabeth Neville ,  Satish Radhakrishnan ,  Kartik Shah ,  Vinay Prabhakar ,  Venkata Sharat Chandra Parimi ,  Sungwon Ha

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.