公开(公告)号：US20130186859A1

公开(公告)日：2013-07-25

申请号：US13732203

申请日：2012-12-31

Applicant: Applied Materials, Inc. a corporation of the State of Delaware, U.S.A

Inventor： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

IPC: H01L21/02 ,  C23C16/513 ,  B44C1/22

CPC classification number: H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

Abstract: RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

公开(公告)号：US20210327686A1

公开(公告)日：2021-10-21

申请号：US17244824

申请日：2021-04-29

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Jozef Kudela ,  Kallol Bera ,  Tsutomu Tanaka ,  Dmitry A. Dzilno

IPC: H01J37/32

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

公开(公告)号：US10886053B2

公开(公告)日：2021-01-05

申请号：US16282085

申请日：2019-02-21

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Carl A. Sorensen ,  John M. White

IPC: H05H1/46 ,  H01F17/06 ,  H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20180277351A1

公开(公告)日：2018-09-27

申请号：US15924213

申请日：2018-03-17

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

IPC: H01L21/02 ,  H01J37/32 ,  B44C1/22 ,  C23C16/513

CPC classification number: H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

Abstract: RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52,55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

公开(公告)号：US10304607B2

公开(公告)日：2019-05-28

申请号：US15668064

申请日：2017-08-03

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Carl A. Sorensen ,  John M. White

IPC: H05H1/46 ,  H01F17/06 ,  C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01F27/08

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US09827578B2

公开(公告)日：2017-11-28

申请号：US14726067

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

IPC: B05B1/18 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

公开(公告)号：US09818580B2

公开(公告)日：2017-11-14

申请号：US14727857

申请日：2015-06-01

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White ,  Ranjit Indrajit Shinde ,  Seon-Mee Cho ,  Douglas D. Truong

IPC: H05H1/24 ,  H01J37/32 ,  H01P3/00 ,  H01P11/00 ,  H05H1/46 ,  H01P3/06 ,  H01P3/08 ,  H01Q13/22

CPC classification number: H01J37/32082 ,  H01J37/3222 ,  H01J37/32577 ,  H01P3/00 ,  H01P3/06 ,  H01P3/085 ,  H01P11/003 ,  H01Q13/22 ,  H05H1/24 ,  H05H1/46 ,  H05H2001/463 ,  Y10T29/49169

Abstract: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises two conductors, one of which has a plurality of apertures. In one aspect, apertures in different portions of the conductor have different sizes, spacing or orientations. In another aspect, adjacent apertures at successive longitudinal positions are offset along the transverse dimension. In another aspect, the apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

公开(公告)号：US11532418B2

公开(公告)日：2022-12-20

申请号：US17113769

申请日：2020-12-07

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Carl A. Sorensen ,  John M. White

IPC: H01F17/06 ,  H01J37/32 ,  H01F27/08 ,  C23C16/455 ,  C23C16/505

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20210050187A1

公开(公告)日：2021-02-18

申请号：US16976569

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Tsutomu Tanaka ,  Alexander V. Garachtchenko ,  Dmitry A. Dzilno ,  Avinash Shervegar ,  Kallol Bera ,  Xiaopu Li ,  Anantha K. Subramani ,  John C. Forster

IPC: H01J37/32 ,  C23C16/455

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

公开(公告)号：US20190311886A1

公开(公告)日：2019-10-10

申请号：US16380294

申请日：2019-04-10

Applicant: Applied Materials, Inc.

Inventor： Siva Chandrasekar ,  Quoc Truong ,  Dmitry A. Dzilno ,  Avinash Shervegar ,  Jozef Kudela ,  Tsutomu Tanaka ,  Alexander V. Garachtchenko ,  Yanjun Xia ,  Balamurugan Ramasamy ,  Kartik Shah

IPC: H01J37/32 ,  C23C16/511

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side, a first dielectric adjacent a second side of the powered electrode and at least one second dielectric adjacent the first dielectric on a side opposite the first dielectric. The sum of the thicknesses of the first dielectric and each of the second dielectrics is in the range of about 10 mm to about 17 mm.