公开(公告)号：US20080090988A1

公开(公告)日：2008-04-17

申请号：US11905049

申请日：2007-09-27

申请人： Keisuke Nakazawa ,  Katsuhiko Tachibana ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki ,  Osamu Arisumi

发明人： Keisuke Nakazawa ,  Katsuhiko Tachibana ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki ,  Osamu Arisumi

IPC分类号： C08G77/12 ,  H01L21/31

CPC分类号： H01L21/3125 ,  C08G77/62 ,  C09D183/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337

摘要： A method for handling polysilazane or a polysilazane solution includes synthesizing polysilazane and preparing the polysilazane solution in a first space isolated from outside air. The first space is mainly supplied with air from which amine, basic substance, volatile organic compound and acidic substance are eliminated.

摘要翻译： 聚硅氮烷或聚硅氮烷溶液的处理方法包括合成聚硅氮烷并在与外部空气隔离的第一空间中制备聚硅氮烷溶液。 第一个空间主要供应有空气，从中除去胺，碱性物质，挥发性有机化合物和酸性物质。

公开(公告)号：US20080064212A1

公开(公告)日：2008-03-13

申请号：US11892634

申请日：2007-08-24

申请人： Yoshihiro Ogawa ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Kaori Umezawa ,  Hiroshi Tomita ,  Atsuko Kawasaki

发明人： Yoshihiro Ogawa ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Kaori Umezawa ,  Hiroshi Tomita ,  Atsuko Kawasaki

IPC分类号： H01L21/311 ,  H01L21/31

CPC分类号： H01L21/3125 ,  C23C18/122 ,  C23C18/1287 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/316 ,  H01L21/3165 ,  H01L21/67086

摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.

摘要翻译： 一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

公开(公告)号：US20070004170A1

公开(公告)日：2007-01-04

申请号：US11451519

申请日：2006-06-13

申请人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

发明人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

IPC分类号： H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/76224

摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

摘要翻译： 一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有 通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜， 含有蒸汽或纯水的气氛。

公开(公告)号：US20060246684A1

公开(公告)日：2006-11-02

申请号：US11387854

申请日：2006-03-24

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki

IPC分类号： H01L21/76 ,  H01L21/8242

CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3165 ,  H01L27/115 ,  H01L27/11521

摘要： A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在基材上涂布含有过羟硅氮烷聚合物的溶液，加热所述溶液，形成含有所述含水硅氮烷聚合物的膜，并在减压下在水蒸气气氛中氧化所述膜， 含硅和氧的绝缘膜。

公开(公告)号：US07060559B2

公开(公告)日：2006-06-13

申请号：US10352083

申请日：2003-01-28

申请人： Yoshio Ozawa ,  Katsuhiko Hieda ,  Atsuko Kawasaki

发明人： Yoshio Ozawa ,  Katsuhiko Hieda ,  Atsuko Kawasaki

IPC分类号： H01L21/336 ,  H01L21/76

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L29/42324

摘要： In a method of manufacturing a semiconductor device having a nonvolatile semiconductor memory element with a two-layered gate structure in which a floating gate and control gate are stacked, a polysilicon layer serving as the floating gate is stacked on a silicon substrate via a tunnel insulating film. Then, the silicon layer, tunnel insulating film, and substrate are selectively etched to form an element isolation trench. A nitride film is formed on the sidewall surface of the silicon layer exposed into the element isolation trench. An oxide film is buried in the element isolation trench. A conductive film serving as the control gate is stacked on the oxide film and silicon layer via an electrode insulating film. The conductive film, electrode insulating film, and silicon layer are selectively etched to form the control gate and floating gate.

摘要翻译： 在制造半导体器件的方法中，该半导体器件具有堆叠浮置栅极和控制栅极的双层栅极结构的非易失性半导体存储元件，用作浮置栅极的多晶硅层通过隧道绝缘层叠在硅衬底上 电影。 然后，选择性地蚀刻硅层，隧道绝缘膜和衬底以形成元件隔离沟槽。 在露出到元件隔离沟槽中的硅层的侧壁表面上形成氮化物膜。 氧化膜被埋在元件隔离槽中。 用作控制栅极的导电膜通过电极绝缘膜堆叠在氧化膜和硅层上。 选择性地蚀刻导电膜，电极绝缘膜和硅层以形成控制栅极和浮动栅极。

公开(公告)号：US5464420A

公开(公告)日：1995-11-07

申请号：US206255

申请日：1994-03-07

申请人： Shinichi Hori ,  Atsuko Kawasaki ,  Takefumi Nakashita ,  Yoshiharu Inui ,  Toshiaki Sakaki ,  Miyo Miki

发明人： Shinichi Hori ,  Atsuko Kawasaki ,  Takefumi Nakashita ,  Yoshiharu Inui ,  Toshiaki Sakaki ,  Miyo Miki

IPC分类号： A61B17/132 ,  A61B17/135 ,  A61B17/00

CPC分类号： A61B17/1325 ,  A61B17/135

摘要： The invention presents a compressive hemostatic belt which is easy to handle and is disposable. A balloon 5 inflatable by filling with fluid is mounted on a specific position of a strip 1 made of non-elastic or low-elastic fiber cloth or the like through mounting means, and a pump 8 and a pressure gauge 9 are connected to the balloon 5 through a check valve 6. The balloon 5 is filled with a fluid by manipulating the pump 8 while observing the pressure gauge 9 to inflate the balloon 5, so that only the area where bleeding is to be stopped is put under pressure. Since the balloon 5 is inflated only on the specified area, a piece of hard material 4 may be placed between the balloon 5 and the strip 1. A non-elastic reinforcing member 11 inserted on the opposite side of the balloon 5 can be varied, or the confronting portion of the strip 1 against the balloon 5 can be formed of a non-elastic reinforcing member stronger than the materials of other portions of the strip.

摘要翻译： 本发明提供一种易于处理并且是一次性的压缩止血带。 通过填充流体而充气的球囊5通过安装装置安装在由非弹性或低弹性纤维布等制成的带材1的特定位置，泵8和压力计9连接到球囊 通过操作泵8，同时观察压力计9使气囊5膨胀，从而仅使止血区域处于压力下，从而填充流体。 由于球囊5仅在指定区域上膨胀，所以可以将一块硬质材料4放置在球囊5与条带1之间。插入在球囊5的相对侧上的非弹性加强构件11可以变化， 或者条带1相对于气囊5的相对部分可以由比带材的其它部分的材料更强的非弹性加强构件形成。