公开(公告)号：US07781329B2

公开(公告)日：2010-08-24

申请号：US12425498

申请日：2009-04-17

Applicant: Axel Preusse ,  Markus Nopper ,  Thomas Ortleb ,  Juergen Boemmels

Inventor： Axel Preusse ,  Markus Nopper ,  Thomas Ortleb ,  Juergen Boemmels

IPC: H01L21/4763

CPC classification number: H01L21/76828 ,  H01L21/288 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76883 ,  H01L24/13 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/00

Abstract: By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.

Abstract translation: 通过在敏感介电材料与湿化学试剂（例如电解质溶液）接触之前和/或之后引入额外的热处理，可以在制造高级半导体器件期间实现关于漏电流或介电强度的增强性能。 例如，可以基于无电沉积技术提供用于金属线的金属盖层，其中额外的热处理可以提供所需的电性能。

公开(公告)号：US20090061621A1

公开(公告)日：2009-03-05

申请号：US12045907

申请日：2008-03-11

Applicant: Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

Inventor： Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

公开(公告)号：US20080182409A1

公开(公告)日：2008-07-31

申请号：US11782987

申请日：2007-07-25

Applicant: Robert Seidel ,  Axel Preusse ,  Ralf Richter

Inventor： Robert Seidel ,  Axel Preusse ,  Ralf Richter

IPC: H01L21/445

CPC classification number: H01L21/76879 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76859 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76874

Abstract: By forming an activation/nucleation layer selectively at a bottom of an opening, efficient electroless deposition techniques may be used for forming contacts, vias and trenches of advanced semiconductor devices. By selectively providing the activation material, a self-aligned bottom-to-top fill behavior may be obtained.

Abstract translation: 通过在开口的底部选择性地形成活化/成核层，可以使用有效的无电沉积技术来形成先进的半导体器件的触点，通路和沟槽。 通过选择性地提供活化材料，可以获得自对准的底对顶填充行为。

公开(公告)号：US20070178690A1

公开(公告)日：2007-08-02

申请号：US11538464

申请日：2006-10-04

Applicant: Markus Nopper ,  Udo Nothelfer ,  Axel Preusse

Inventor： Markus Nopper ,  Udo Nothelfer ,  Axel Preusse

IPC: H01L21/4763 ,  H01L21/31

CPC classification number: H01L21/76885 ,  H01L21/76817 ,  H01L21/76852

Abstract: By using a patterned sacrificial layer for forming highly conductive metal regions, the formation of a reliable conductive barrier layer may be accomplished prior to the actual deposition of a low-k dielectric material. Hence, even highly porous dielectrics may be used in combination with highly conductive metals, substantially without compromising the diffusion characteristics and the electromigration performance. Hence, metallization layers for highly scaled semiconductor devices having critical dimensions of 50 nm and significantly less may be provided.

Abstract translation: 通过使用用于形成高导电性金属区域的图案化牺牲层，可以在实际沉积低k电介质材料之前完成可靠的导电阻挡层的形成。 因此，甚至高度多孔的电介质可以与高导电性金属组合使用，基本上不影响扩散特性和电迁移性能。 因此，可以提供具有临界尺寸为50nm并且显着较小的用于高比例尺度的半导体器件的金属化层。

公开(公告)号：US20060194431A1

公开(公告)日：2006-08-31

申请号：US11211786

申请日：2005-08-25

Applicant: Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

Inventor： Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

IPC: H01L21/44 ,  C25D17/00

CPC classification number: C23C18/1879 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1865 ,  C25D5/54 ,  H01L21/288

Abstract: In an enhanced technique for electroless metal deposition, the substrate is heated to or above the operating temperature for the specific plating solution, while the plating solution may be maintained at a non-critical low temperature to substantially prevent spontaneous self-decomposition within the plating tool. Hence, significant advantages with respect to process control and cost of ownership may be achieved.

公开(公告)号：US20060193992A1

公开(公告)日：2006-08-31

申请号：US11212048

申请日：2005-08-25

Applicant: Matthias Bonkass ,  Axel Preusse ,  Markus Nopper

Inventor： Matthias Bonkass ,  Axel Preusse ,  Markus Nopper

IPC: B05D1/18 ,  B05C11/00 ,  B05C19/02

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D21/12 ,  H01L21/2885

Abstract: By using signals from an electric drive assembly of an electroplating tool, the operating position of the substrate surface to be plated may be determined in an automated fashion wherein, based on a reference position, the meniscus of the electrolyte and/or any appropriate operating position may be determined. Consequently, accuracy and throughput may be enhanced compared to conventional manual or semi-automatic adjustment procedures.

Abstract translation: 通过使用来自电镀工具的电驱动组件的信号，可以以自动方式确定要被电镀的基板表面的操作位置，其中基于参考位置，电解液的弯液面和/或任何适当的操作位置 可以确定。 因此，与传统的手动或半自动调节程序相比，可以提高精度和产量。

公开(公告)号：US20050241947A1

公开(公告)日：2005-11-03

申请号：US11043400

申请日：2005-01-26

Applicant: Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

Inventor： Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

IPC: B01J19/08 ,  C01B13/10 ,  C23C18/16 ,  C25D7/00 ,  C25D17/00 ,  C25D21/16 ,  C25D21/18 ,  H01L21/768

CPC classification number: C23C18/1617 ,  C01B13/10 ,  C25D21/18

Abstract: A plating tool for a single-use plating process comprises a reclaim system in combination with a support tank to enable collection of non-consumed plating solution drained off from the process chamber, which is then re-circulated to the support tank after an efficient treatment in the reclaim system. Since the non-consumed plating solution is continuously recycled, the electrolyte may be preserved substantially without any time limit while at the same time production costs for a single-use plating process are significantly reduced.

Abstract translation: 用于一次性电镀工艺的电镀工具包括与支撑罐组合的回收系统，以能够收集从处理室排出的非消耗电镀溶液，然后在有效处理之后将其再循环到支撑罐 在回收系统中。 由于不消耗电镀溶液被连续地再循环，所以可以基本上保持电解质没有任何时间限制，同时，一次性电镀工艺的生产成本显着降低。

公开(公告)号：US06362100B1

公开(公告)日：2002-03-26

申请号：US09589839

申请日：2000-06-08

Applicant: Takeshi Nogami ,  Axel Preusse ,  Valery Dubin

Inventor： Takeshi Nogami ,  Axel Preusse ,  Valery Dubin

IPC: H01L2144

CPC classification number: C25D17/001 ,  C25D17/005 ,  H01L21/2885

Abstract: A method and apparatus for fabricating electrochemical copper interconnections between the component parts of an integrated circuit on a semiconductor device. A cathodic platter is provided that includes contact pins that contact the surface of a semiconductor wafer at predetermined locations during the electrochemical deposition process. The contact pins are arranged on the cathodic platter so that when placed on the surface of the semiconductor wafer the contact pins surround the perimetrical edges of each respective semiconductor device on the semiconductor wafer. Once the semiconductor wafer is properly positioned on the cathodic platter, a copper conductive layer can be electrochemically and uniformly deposited on the surface of the semiconductor device.

Abstract translation: 一种用于在半导体器件上的集成电路的部件之间制造电化学铜互连的方法和装置。 提供了一种阴极拼盘，其包括在电化学沉积过程期间在预定位置处接触半导体晶片的表面的接触针。 接触针布置在阴极盘上，使得当放置在半导体晶片的表面上时，接触引脚围绕半导体晶片上每个相应半导体器件的周边。 一旦半导体晶片正确地定位在阴极盘上，铜导电层可以电化学均匀地沉积在半导体器件的表面上。

公开(公告)号：US08314494B2

公开(公告)日：2012-11-20

申请号：US12355840

申请日：2009-01-19

Applicant: Markus Nopper ,  Axel Preusse ,  Robert Seidel

Inventor： Markus Nopper ,  Axel Preusse ,  Robert Seidel

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/53238 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/76861 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.

Abstract translation: 考虑到其中包含的一种或多种物质的标准电极电位，可以提供用于铜区域的导电盖材料，其具有增强的蚀刻电阻率。 例如，代替常规使用的CoWP合金，可以通过用具有较小负极标准电极电位的金属物质例如镍代替钴物质来代替改进的合金。 因此，可以增强设备性能，同时可以减少整体过程的复杂性。

公开(公告)号：US08153524B2

公开(公告)日：2012-04-10

申请号：US12711373

申请日：2010-02-24

Applicant: Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

Inventor： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

IPC: H01L21/44

CPC classification number: H01L21/76826 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76864 ,  Y10S438/906

Abstract: During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.

Abstract translation: 在形成复杂的金属化系统期间，可以在含铜金属区域上形成导电覆盖层，以增强电迁移行为，而不会不利地影响总导电性。 同时，可以进行热化学处理以提供敏感电介质材料的优异的表面条件并且还抑制碳消耗，这常常导致敏感的ULK材料的材料特性的显着变化。