THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, DISPLAY SUBSTRATE, DISPLAY APPARATUS

    公开(公告)号:US20180374954A1

    公开(公告)日:2018-12-27

    申请号:US15737031

    申请日:2017-06-16

    Abstract: The present disclosure provides a thin film transistor, a method for fabricating the same, a display substrate, and a display apparatus, and belongs to the field of display technology. The method includes: forming a metal oxide semiconductor pattern comprising first and second metal oxide semiconductor layers, the second metal oxide semiconductor layer being above the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; etching the source-drain metal layer and the second metal oxide semiconductor layer to form source and drain electrodes and an active layer of the thin film transistor. The active layer is obtained after removing the second metal oxide semiconductor layer between the source and drain electrodes using a first etchant, and the first etchant has a higher etching rate on the second metal oxide semiconductor layer than on the first metal oxide semiconductor layer.

    DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL

    公开(公告)号:US20250040247A1

    公开(公告)日:2025-01-30

    申请号:US18023966

    申请日:2022-03-31

    Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate and a display panel. The display substrate includes: a first semiconductor layer on a base substrate, where an active layer of the first thin film transistor is in the first semiconductor layer, and the active layer of the first thin film transistor at least comprises a channel region and a drain contact region; an interlayer insulation layer on a side of the first semiconductor layer away from the base substrate; and a first conductive layer on a side of the interlayer insulation layer away from the first semiconductor layer, wherein the pixel electrode is located in the first conductive layer, and the pixel electrode in the pixel unit is directly and electrically connected to the drain contact region of the active layer of the first thin film transistor through a through hole.

    Display Substrate, Display Panel and Display Device

    公开(公告)号:US20250031447A1

    公开(公告)日:2025-01-23

    申请号:US18279205

    申请日:2022-10-31

    Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.

    Display Substrate, Manufacturing Method Therefor, and Display Device

    公开(公告)号:US20240363641A1

    公开(公告)日:2024-10-31

    申请号:US18028569

    申请日:2022-06-30

    CPC classification number: H01L27/124 H01L27/1248 H01L27/1259

    Abstract: A display substrate, a manufacturing method therefor, and a display device are provided. The display substrate includes a base substrate and at least one transistor disposed on the base substrate, with a transistor including an active layer pattern disposed on the base substrate; a first source-drain electrode disposed on the base substrate and electrically connected with the active layer pattern; a first gate electrode disposed on a side of the active layer pattern away from the base substrate, the first gate electrode and the active layer pattern having overlapped orthographic projections on the base substrate and are not in contact with each other; a second source-drain electrode disposed on a side of the active lay pattern away from the base substrate and including a first sub-electrode and a second sub-electrode connected with each other, the second sub-electrode is located on a side of the first sub-electrode close to the first gate electrode, the first sub-electrode is electrically connected with the active layer pattern, the second sub-electrode and the active layer pattern have overlapped orthographic projections on the base substrate and are not in contact with each other.

    THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20240274674A1

    公开(公告)日:2024-08-15

    申请号:US18021778

    申请日:2022-03-31

    CPC classification number: H01L29/41733 H01L29/42384

    Abstract: Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

    DISPLAY SUBSTRATE AND DISPLAY DEVICE
    38.
    发明公开

    公开(公告)号:US20240266355A1

    公开(公告)日:2024-08-08

    申请号:US18021863

    申请日:2022-03-23

    CPC classification number: H01L27/1225 H01L27/1244 H01L27/1251

    Abstract: A display substrate and a display device are provided. The display substrate includes: a base substrate, and a low temperature poly-silicon thin film transistor and a metal oxide thin film transistor on the base substrate; the low temperature poly-silicon thin film transistor includes: a low temperature poly-silicon semiconductor layer, a first gate insulating layer, a first gate electrode, a first interlayer insulating layer, a first source electrode, and a first drain electrode; the metal oxide thin film transistor includes: a metal oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a second interlayer insulating layer, a passivation layer, a second source electrode, and a second drain electrode; the second source electrode is on a side of the metal oxide semiconductor layer close to the base substrate; and the second drain electrode is on a side of the metal oxide semiconductor layer away from the base substrate.

    ARRAY SUBSTRATE AND DISPLAY PANEL
    40.
    发明公开

    公开(公告)号:US20240241415A1

    公开(公告)日:2024-07-18

    申请号:US18574261

    申请日:2023-01-10

    CPC classification number: G02F1/1368 G02F1/136222 G02F1/136286

    Abstract: An array substrate and a display panel. The array substrate includes: a base substrate; a gate line and a data line on the base substrate, the gate line intersect the data line to define a pixel region; a metal oxide thin film transistor is arranged in the pixel region, the metal oxide thin film transistor includes a metal oxide semiconductor layer; the metal oxide semiconductor layer includes a first part and a second part; the first part and the data line are connected through a first via hole; the first part is in a stripe shape; a first included angle is between extension directions of the first part and the data line; an orthographic projection of the second part overlap with an orthographic projection of the gate line on the base substrate and do not overlap with an orthographic projection of the data line on the base substrate.

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