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公开(公告)号：US09297063B2
公开(公告)日：2016-03-29
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： H01J37/317 , H01J37/16 , C23C14/48 , C23C16/04 , H01J37/32
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。
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公开(公告)号：US08916056B2
公开(公告)日：2014-12-23
申请号：US13649159
申请日：2012-10-11
申请人： Bon-Woong Koo , Richard M. White
发明人： Bon-Woong Koo , Richard M. White
IPC分类号： B44C1/22 , H01L21/302 , C23C16/503
CPC分类号： H01J37/32862 , H01J37/32422 , H01J37/32706
摘要： A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.
摘要翻译： 等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。 偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子，并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。 清洁时间间隔与第一处理时间间隔分开，并且在第一处理时间间隔之后发生。
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公开(公告)号：US20140021373A1
公开(公告)日：2014-01-23
申请号：US13555910
申请日：2012-07-23
IPC分类号： G21K5/02
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J2237/24564
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.
摘要翻译： 公开了一种离子注入系统和方法，其中通过使用注入机中的调制电源系统来最小化电压中的毛刺。 调制电源系统包括传统电源和与每个电源相关联的控制单元，其中如果检测到毛刺或电弧，则使用控制单元将电源与电极隔离。 然后，控制单元在毛刺状态被修正之后恢复连通性。
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公开(公告)号：US20130287964A1
公开(公告)日：2013-10-31
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。
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公开(公告)号：US08329055B2
公开(公告)日：2012-12-11
申请号：US12244017
申请日：2008-10-02
申请人： Bon-Woong Koo
发明人： Bon-Woong Koo
IPC分类号： C03C15/00
CPC分类号： G21K5/02 , C23C14/48 , H01J37/32412 , H01J37/32623 , H01J37/32706
摘要： Apparatus and method for improving the plasma uniformity in a plasma based system are described. The apparatus may include a plurality of electrical conductors, to which one or more types of electrical potentials may be applied. The conductors may be arranged in an array and may preferably be positioned near the plasma. By applying the bias voltages to the various electrically conductors, the plasma can be manipulated. For example, the conductors may extract or confine the electrons in the plasma, thereby locally adjusting the plasma density near the conductors. In the process, uniformity of the plasma density or ion concentration in the plasma may be improved. In a further embodiment, a magnetic field is included in the same direction as the electric field created by the bias voltage so as to better confine the charged particles.
摘要翻译： 描述了用于改善基于等离子体的系统中的等离子体均匀性的装置和方法。 该装置可以包括可施加一种或多种类型的电位的多个电导体。 导体可以排列成阵列，并且优选地位于等离子体附近。 通过将偏置电压施加到各种电导体，可以操纵等离子体。 例如，导体可以提取或限制等离子体中的电子，从而局部地调节导体附近的等离子体密度。 在该过程中，等离子体中的等离子体密度或离子浓度的均匀性可以得到改善。 在另一个实施例中，磁场包括在与由偏置电压产生的电场相同的方向上，以便更好地限制带电粒子。
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36.发明申请TECHNIQUE AND APPARATUS FOR MONITORING ION MASS, ENERGY, AND ANGLE IN PROCESSING SYSTEMS 有权用于监控处理系统中离子质量，能量和角度的技术和装置公开(公告)号：US20120175518A1
公开(公告)日：2012-07-12
申请号：US12987950
申请日：2011-01-10
IPC分类号： H01J49/00
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译： 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。
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公开(公告)号：US07820988B2
公开(公告)日：2010-10-26
申请号：US12244001
申请日：2008-10-02
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3007 , H01J2237/0041 , H01J2237/047 , H01J2237/24507 , H01J2237/24535 , H01J2237/30472 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
摘要翻译： 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。
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公开(公告)号：US08461558B2
公开(公告)日：2013-06-11
申请号：US13175494
申请日：2011-07-01
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译： 一种用于植入衬底的系统。 该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。 该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压 在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。 该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。
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公开(公告)号：US08072149B2
公开(公告)日：2011-12-06
申请号：US12079978
申请日：2008-03-31
申请人： Jeong-Ha Cho , Bon-Woong Koo , Byung-Yeal Yoon , Yong-Tae Kim , Jeong-Ho Yoon
发明人： Jeong-Ha Cho , Bon-Woong Koo , Byung-Yeal Yoon , Yong-Tae Kim , Jeong-Ho Yoon
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J27/08 , H01J37/04 , H01J37/3171 , H01J2237/03 , H01J2237/06308 , H01J2237/082
摘要： A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC ionization, as traditionally used for hot mode operation. The second cathode, preferably located on the opposite wall of the chamber, is of a smaller size. This smaller cathode is still indirectly heated by a filament, but due to its smaller size, radiates less heat into the source chamber, allowing the ion source to operate in cold mode, thereby preserving the molecular structure of the target molecules. In both modes, the unused cathode is preferably biased so as to be at the same potential as the IHC, thus allowing it to act as a repeller.
摘要翻译： 公开了一种双重不平衡间接加热阴极（IHC）离子室。 阴极具有不同的表面积，从而影响每个阴极的辐射量。 在优选实施例中，一个阴极具有通常用于IHC电离的尺寸和尺寸，如传统上用于热模式操作。 优选地，位于腔室的相对壁上的第二阴极具有较小的尺寸。 这种较小的阴极仍然被灯丝间接加热，但是由于其尺寸较小，辐射较少的热量进入源室，从而允许离子源以冷模式运行，从而保持目标分子的分子结构。 在两种模式中，未使用的阴极优选被偏压以与IHC处于相同的电位，从而允许其用作推斥器。
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公开(公告)号：US07723707B2
公开(公告)日：2010-05-25
申请号：US11781700
申请日：2007-07-23
IPC分类号： G21G1/00
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译： 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。
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