BEAMLINE ELECTRODE VOLTAGE MODULATION FOR ION BEAM GLITCH RECOVERY
    1.
    发明申请
    BEAMLINE ELECTRODE VOLTAGE MODULATION FOR ION BEAM GLITCH RECOVERY 审中-公开
    光束电极电压调制用于离子束玻璃回收

    公开(公告)号:US20140021373A1

    公开(公告)日:2014-01-23

    申请号:US13555910

    申请日:2012-07-23

    IPC分类号: G21K5/02

    摘要: An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.

    摘要翻译: 公开了一种离子注入系统和方法,其中通过使用注入机中的调制电源系统来最小化电压中的毛刺。 调制电源系统包括传统电源和与每个电源相关联的控制单元,其中如果检测到毛刺或电弧,则使用控制单元将电源与电极隔离。 然后,控制单元在毛刺状态被修正之后恢复连通性。

    GLITCH CONTROL DURING IMPLANTATION
    2.
    发明申请
    GLITCH CONTROL DURING IMPLANTATION 有权
    植入过程中的控制

    公开(公告)号:US20120003760A1

    公开(公告)日:2012-01-05

    申请号:US13160573

    申请日:2011-06-15

    IPC分类号: H01L21/66 G21K5/00

    摘要: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

    摘要翻译: 公开了一种离子注入系统和方法,其中通过对注入机的电力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间,输出滤波,改进的毛刺检测和消除电压消隐。 通过最小化毛刺,可以在每次检测到电压毛刺时不必暂停扫描,生产具有可接受的剂量均匀性的太阳能电池。 例如,通过将电压的持续时间缩短到约20-40毫秒,可以保持约3%内的剂量均匀性。

    Faraday dose and uniformity monitor for plasma based ion implantation
    3.
    发明授权
    Faraday dose and uniformity monitor for plasma based ion implantation 有权
    法拉第剂量和均匀度监测器用于等离子体离子注入

    公开(公告)号:US07132672B2

    公开(公告)日:2006-11-07

    申请号:US10817755

    申请日:2004-04-02

    IPC分类号: H01J37/244

    摘要: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

    摘要翻译: 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面,以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低,以使等离子体和植入物扰动最小化,并且可以包括径向和方位角分量,或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外,剂量电子学可以提供高电压脉冲电流的集成,并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

    Faraday dose and uniformity monitor for plasma based ion implantation
    4.
    发明申请
    Faraday dose and uniformity monitor for plasma based ion implantation 有权
    法拉第剂量和均匀度监测器用于等离子体离子注入

    公开(公告)号:US20050223991A1

    公开(公告)日:2005-10-13

    申请号:US10817755

    申请日:2004-04-02

    摘要: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

    摘要翻译: 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面,以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低,以使等离子体和植入物扰动最小化,并且可以包括径向和方位角分量,或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外,剂量电子学可以提供高电压脉冲电流的集成,并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

    BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS
    5.
    发明申请
    BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS 有权
    用于等离子体加工设备的偏心系统

    公开(公告)号:US20140106571A1

    公开(公告)日:2014-04-17

    申请号:US13649159

    申请日:2012-10-11

    摘要: A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.

    摘要翻译: 等离子体处理装置包括限定处理室的处理室壳体,位于处理室中的用于支撑工件的压板,被配置为在处理室中产生等离子体的源和偏置系统。 偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子,并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。 清洁时间间隔与第一处理时间间隔分开,并且在第一处理时间间隔之后发生。

    Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
    6.
    发明授权
    Technique and apparatus for monitoring ion mass, energy, and angle in processing systems 有权
    用于监控处理系统中离子质量,能量和角度的技术和设备

    公开(公告)号:US08698107B2

    公开(公告)日:2014-04-15

    申请号:US12987950

    申请日:2011-01-10

    IPC分类号: H01J37/30

    摘要: A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.

    摘要翻译: 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间(TOF)离子传感器系统包括漂移管,其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端,其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处,其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

    Glitch control during implantation
    7.
    发明授权
    Glitch control during implantation 有权
    植入期间毛刺控制

    公开(公告)号:US08604449B2

    公开(公告)日:2013-12-10

    申请号:US13160573

    申请日:2011-06-15

    IPC分类号: G21G5/00

    摘要: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

    摘要翻译: 公开了一种离子注入系统和方法,其中通过对注入机的电力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间,输出滤波,改进的毛刺检测和消除电压消隐。 通过最小化毛刺,可以在每次检测到电压毛刺时不必暂停扫描,生产具有可接受的剂量均匀性的太阳能电池。 例如,通过将电压的持续时间缩短到约20-40毫秒,可以保持约3%内的剂量均匀性。

    EXCITED GAS INJECTION FOR ION IMPLANT CONTROL
    9.
    发明申请
    EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
    激光注射用于离子植入控制

    公开(公告)号:US20100140077A1

    公开(公告)日:2010-06-10

    申请号:US12328096

    申请日:2008-12-04

    IPC分类号: B01J19/08 C23C16/513

    摘要: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

    摘要翻译: 公开了一种利用离子源和/或原子气体注入的离子源。 在离子束施加中,源气体可以直接使用,如通常提供的。 或者或另外,源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。 这可以用于产生兴奋的中性粒子,重离子,亚稳分子或多电荷离子。 在另一个实施例中,使用多个气体,其中一个或多个气体通过远程等离子体发生器。 在某些实施方案中,气体在被提供给离子源室之前组合在单个等离子体发生器中。 在等离子体浸渍应用中,通过一个或多个另外的气体注入位置将等离子体注入到处理室中。 这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

    PLASMA UNIFORMITY CONTROL USING BIASED ARRAY
    10.
    发明申请
    PLASMA UNIFORMITY CONTROL USING BIASED ARRAY 失效
    使用偏置阵列的等离子体均匀控制

    公开(公告)号:US20100084980A1

    公开(公告)日:2010-04-08

    申请号:US12244017

    申请日:2008-10-02

    申请人: Bon-Woong Koo

    发明人: Bon-Woong Koo

    IPC分类号: H01J7/24 G21K5/10

    摘要: Apparatus and method for improving the plasma uniformity in a plasma based system are described. The apparatus may include a plurality of electrical conductors, to which one or more types of electrical potentials may be applied. The conductors may be arranged in an array and may preferably be positioned near the plasma. By applying the bias voltages to the various electrically conductors, the plasma can be manipulated. For example, the conductors may extract or confine the electrons in the plasma, thereby locally adjusting the plasma density near the conductors. In the process, uniformity of the plasma density or ion concentration in the plasma may be improved. In a further embodiment, a magnetic field is included in the same direction as the electric field created by the bias voltage so as to better confine the charged particles.

    摘要翻译: 描述了用于改善基于等离子体的系统中的等离子体均匀性的装置和方法。 该装置可以包括可施加一种或多种类型的电位的多个电导体。 导体可以排列成阵列,并且优选地位于等离子体附近。 通过将偏置电压施加到各种电导体,可以操纵等离子体。 例如,导体可以提取或限制等离子体中的电子,从而局部地调节导体附近的等离子体密度。 在该过程中,等离子体中的等离子体密度或离子浓度的均匀性可以得到改善。 在另一个实施例中,磁场包括在与由偏置电压产生的电场相同的方向上,以便更好地限制带电粒子。