公开(公告)号：US09303189B2

公开(公告)日：2016-04-05

申请号：US14203693

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150376463A1

公开(公告)日：2015-12-31

申请号：US14750271

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Wei Weng ,  Lei Liu ,  Alexei Leonov

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除铜，铜屏障和电介质层中的至少一种的至少一部分。

公开(公告)号：US20150376461A1

公开(公告)日：2015-12-31

申请号：US14750107

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.

Abstract translation: 化学机械抛光浓缩物包含至少10重量％的分散在pH在约1.5至约7范围内的液体载体中的胶态二氧化硅磨料颗粒。胶体二氧化硅磨料包括氨基硅烷化合物或掺入鏻硅烷化合物 其中。 在使用之前，浓缩物可以用至少3份水/份浓缩物稀释。

公开(公告)号：US20150259574A1

公开(公告)日：2015-09-17

申请号：US14203693

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US09127187B1

公开(公告)日：2015-09-08

申请号：US14222716

申请日：2014-03-24

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 化学机械抛光组合物包括水基液体载体和分散在液体载体中的第一和第二二氧化硅研磨剂。 第一种二氧化硅研磨剂是具有至少10mV的永久正电荷的胶体二氧化硅研磨剂。 第二硅石磨料具有中性电荷或非永久正电荷。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20140346140A1

公开(公告)日：2014-11-27

申请号：US13898842

申请日：2013-05-21

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Renhe Jia ,  Jeffrey Dysard

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09G1/16

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供了含有二氧化铈研磨剂，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R2，R3和R4以及n如本文所定义，和水，其中抛光 组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。